A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide

This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage Silicon-On-Insulator (HV-SOI) process that allows the fabrication of a buried N+ diffusion below the Buried OXide (BOX) as a standard processing step. The first version of the chip, BUSARD-A, takes advantage of this buried diffusion as an ionizing particle sensor. It includes a small array of 13$\times$13 pixels, with a pitch of $80\,μ$m, and each pixel has one buried diffusio…

Development of SOI pixel detector in Cracow

This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for time and amplitude measurements. In addition the design of a Successive Approximation Register Analog-to…

Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105k pixels at 50 micron pitch

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50 micron pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in t…

Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area

We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed ``XRPIX5b'' with the largest imaging area of 21.9~mm $\times$ 13.8~mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46~e$^-$~(rms) in the…

The SIRIUS Mixed analog-digital ASIC developed for the LOFT LAD and WFM instruments

We report on the development and characterization of the low-noise, low power, mixed analog-digital SIRIUS ASICs for both the LAD and WFM X-ray instruments of LOFT. The ASICs we developed are reading out large area silicon drift detectors (SDD). Stringent requirements in terms of noise (ENC of 17 e- to achieve an energy resolution on the LAD of 200 eV FWHM at 6 keV) and power consumption (650 μW per channel) were basis for the ASICs design. These SIRIUS ASICs are developed to match SDD detectors characteristics: 16 channels ASICs adapted for the LAD (970 microns pitch) and 64 channels for the …

An Integrated Circuit for Signal Processing of the AMS RICH Photmultipliers Tubes

An analog integrated circuit has been designed, in a BiCMOS 0.8 micron technology, for the feasability study of the signal processing of the AMS RICH photomultiplier tubes. This low power, three channel gated integrator includes its own gate and no external analog delay is requiered. It processes PMT pulses over a dynamic range of more than 100. A logic output that indicates whether the analog charge has to be considered is provided. This gated integrator is used with a compact DSP based acquisition system in a 132 channels RICH prototype. The charge calibration of each channel is carried out …

MiniCACTUS-v2测试结果：一种 depleted monolithic CMOS时序传感器原型

Test-beam results from MiniCACTUS-v2: A depleted monolithic CMOS timing sensor prototype

MiniCACTUS-v2原型在测试束实验中实现了0.5毫米×0.5毫米像素48.88皮秒的时间分辨率，展示了高精度的单粒子时间标记能力。

Imaging with the invisible light

We describe a UV photo-detector with single photon(electron) counting and imaging capability. It is based on a CsI photocathode, a GEM charge multiplier and a self triggering CMOS analog pixel chip with 105k pixels at 50 micron pitch. The single photoelectron produced by the absorption of a UV photon is drifted to and multiplied inside a single GEM hole. The coordinates of the GEM avalanche are reconstructed with high accuracy (4 micron rms) by the pixel chip. As a result the map of the GEM holes, arranged on a triangular pattern at 50micron pitch, is finely imaged.