AI 中文总结
该研究开发用于未来对撞机的抗辐射高压CMOS传感器RD50-MPW4，采用150nm CMOS工艺，有新架构和偏置方案。未辐照样本测试有高指标，辐照样本也有超99%效率，还给出电荷收集效率3D图，展示其特性。
AI 中文摘要
欧洲核子研究中心（CERN）的前RD50合作团队致力于开发用于未来对撞机的单片有源像素高压（HV）CMOS传感器，目标是实现高辐射耐受性、良好的时间分辨率和高粒度像素探测器。最新原型RD50-MPW4于2023年由LFoundry采用150nm CMOS工艺生产，具有64x64像素矩阵，间距62μm，采用列漏读出架构。与前作相比，它有独立的模拟和数字电源域以及新的偏置方案，支持超过600V的偏置电压。未辐照样本测试显示效率超99.9%，空间分辨率16μm，定时分辨率10ns；辐照到1×10¹⁵ 1MeV n_eq/cm²的样本效率超99%。还展示了通过双光子吸收激光测量得到的电荷收集效率3D图，清晰勾勒出这种抗辐射、高粒度单片有源像素传感器的耗尽深度。
英文摘要
The former CERN RD50 collaboration develops monolithic active pixel high voltage (HV) CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the RD50-MPW4, was produced by LFoundry in December 2023 using a 150 nm CMOS process. It features a matrix of 64x64 pixels with a 62 $μ$m pitch and employs a column-drain readout architecture. Compared to its predecessor, it now has separate analog and digital power domains and a new biasing scheme with a guard ring structure that supports bias voltages over 600 V. This contribution will discuss the design and latest results of the MPW4, where tests with unirradiated samples showed more than 99.9% efficiency, 16 $μ$m spatial resolution and 10 ns timing resolution. Efficiencies of over 99% were achieved for samples irradiated to fluences of $1 \times 10^{15}$ 1 MeV n$_{\mathrm{eq}}/\mathrm{cm}^2$. A 3D map of the charge collection efficiency from a measurement with two-photon absorption laser is presented that nicely outlines the depletion depth of this radiation hard, high granularity monolithic active pixel sensor.
CommentsProceedings of the 2026 International Conference on Technology & Instrumentation in Particle Physics; 5 pages
DOI：10.1016/j.nima.2026.172091
