The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, V_In-V_N complexes are the dominant III-sublattice related vacancy defects. Enhanced formation of larger V_In-mV_N clusters is observed at the interface, which speaks for high concentrations of additional V_N in the near-interface region and coincides with an increase in the density of screw and edge type dislocations in that area.
Interplay of anionic quasi-atom and interstitial point defects in electrides: abnormal interstice occupation and colossal charge state of point defects in dense FCC-lithium
Interplay of Defects and the Charge Density Wave State in Hf-Doped ZrTe$_{3}$
Clark University（克拉克大学）；Brookhaven National Laboratory（布鲁克海文国家实验室）；Zhejiang University（浙江大学）；Amrita School of Engineering, Amrita Vishwa Vidyapeetham（阿姆里塔工程学院，阿姆里塔维迪亚佩塔姆大学）
Thermodynamic Driving Force Activated Phonon Scattering in InN
University of Illinois, Chicago（伊利诺伊大学芝加哥分校）；University of Dayton（代顿大学）；University of Alabama, Birmingham（阿拉巴马大学伯明翰分校）；Joseph Maxwell Cleland Atlanta VA Medical Center（约瑟夫·麦克斯韦·克利兰亚特兰大退伍军人事务医疗中心）；Andrews University（安德鲁斯大学）；Duke University（杜克大学）
Scanning Tunneling Microscopy of Defect States in the Semiconductor Bi$_2$Se$_3$
Bi $_2$ Se $_3$掺杂过量Bi的扫描隧道光谱图像揭示了具有类似三叶草叶子的引人注目的形状的电子缺陷状态。用一个简单的紧束缚模型，我们表明，在Bi $_2$ Se $_3$的缺陷态的几何形状可以直接相关的位置的起源杂质。只有Bi缺陷的Se网站五个原子层以下的表面实验观察到。我们发现，这种效果可以解释的缺陷和表面电子结构的相互作用。
Interplay between elastic fields due to gravity and a partial dislocation for a hard-sphere crystal coherently grown under gravity: driving force for defect disappearance
Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators
在内禀磁性拓扑绝缘体中，狄拉克表面态能隙是量子反常霍尔态和轴子绝缘态的先决条件。然而，要在非纳米比亚实验性的基础上确定这些差距，已证明是一项挑战。在这里，我们使用分子束外延生长本征MnBi_2 Te_4薄膜。使用扫描隧道显微镜/光谱，我们直接可视化狄拉克质量间隙和它的消失低于和高于磁序温度。我们进一步揭示了狄拉克质量间隙和局部磁缺陷的相互作用。我们发现，在高缺陷区，狄拉克质量间隙崩溃。从头算和耦合狄拉克锥模型计算提供了深入了解缺陷密度和空间间隙变化之间的相关性的微观起源。该工作提供了明确的识别的狄拉克质量间隙在MnBi 2 Te 4，并通过揭示其间隙变化的微观起源，建立了一个材料设计原则，实现奇异态的内禀磁性拓扑绝缘体。
Quantum Monte Carlo assessment of embedding for for strongly correlated defects: interplay between mean-field starting point and interactions
University of Illinois at Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）；University of California, Santa Barbara（加州大学圣塔芭芭拉分校）；Flatiron Institute（平顿研究所）；Bielefeld University（比勒费尔德大学）；Stony Brook University（石溪大学）
Defect-Engineered Multifunctionality in Cu-Doped Bi2Te2: Interplay of Thermoelectric, Piezoelectric, and Optoelectronic Properties from First-Principles Insights
University of West Bohemia（西波希米亚大学）；Riphah International University（里帕赫国际大学）；Northern Border University（北部边界大学）
Interplay of Cl Substitution and He$^{+}$ Irradiation in CrSBr$_{1-x}$Cl$_{x}$
J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences（捷克科学院 J. 赫鲁夫斯基物理化学研究所）；Faculty of Mathematics and Physics, Charles University（查理大学数学与物理学院）；University of Chemistry and Technology Prague（布拉格化工大学）；Institute for Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿-罗斯多夫亥姆霍兹中心离子束物理与材料研究所）
Emergence and suppression of phonon vortices in two-dimensional crystals: Interplay of lattice symmetry, heavy impurities, and shear
Institute of Theoretical Physics, Chinese Academy of Sciences（中国科学院理论物理研究所）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；School of Physics and Information Technology, Shaanxi Normal University（陕西师范大学物理学与信息技术学院）；Center for Theoretical Interdisciplinary Sciences, Wenzhou Institute, University of Chinese Academy of Sciences（中国科学院大学温州研究院交叉科学中心）
