arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1908.03427cond-mat.supr-concond-mat.mtrl-sci

The study of intrinsic defect state of FeSe with scanning tunneling microscopy

Kunliang Bu, Bo Wang, Wenhao Zhang, Ying Fei, Yuan Zheng, Fangzhou Ai, Zongxiu Wu, Qisi Wang, Hongliang Wo, Jun Zhao, Chuanhong Jin, Yi Yin

英文摘要:

We apply high resolution scanning tunneling microscopy to study intrinsic defect states of bulk FeSe. Four types of intrinsic defects including the type I dumbbell, type II dumbbell, top-layer Se vacancy and inner-layer Se-site defect are extensively analyzed by scanning tunneling spectroscopy. From characterized depression and enhancement of density of states measured in a large energy range, the type I dumbbell and type II dumbbell are determined to be the Fe vacancy and Se$_\mathrm{Fe}$ defect, respectively. The top-layer Se vacancy and possible inner-layer Se-site vacancy are also determined by spectroscopy analysis. The determination of defects are compared and largely confirmed in the annular dark-field scanning transmission electron microscopy measurement of the exfoliated FeSe. The detailed mapping of defect states in our experiment lays the foundation for a comparison with complex theoretical calculations in the future.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑