在SrTiO3上外延FeSe薄膜的化学计量和缺陷超结构
Stoichiometry and defect superstructures in epitaxial FeSe films on SrTiO3
摘要：
利用低温扫描隧道显微镜研究了不同退火条件下SrTiO 3（001）衬底上外延FeSe薄膜的化学计量比和缺陷。低温退火与过量供应的Se导致Fe空位和超结构的形成，伴随着在FeSe膜的超导（金属）到绝缘体的转变。而高温退火则可以消除Fe空位和超结构，从而恢复单层FeSe薄膜的高温超导相。我们还观察到多层FeSe在低温退火过程中，这是揭示与铁空位的形成和吸附原子迁移。我们的研究结果文件非常特殊的作用，薄膜化学计量，并帮助解开几个争议的单层FeSe薄膜的性能。
英文摘要：
Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on SrTiO3(001) substrates under various post-growth annealing conditions. Low-temperature annealing with an excess supply of Se leads to formation of Fe vacancies and superstructures, accompanied by a superconductivity (metal)-to-insulator transition in FeSe films. By contrast, high-temperature annealing could eliminate the Fe vacancies and superstructures, and thus recover the high-temperature superconducting phase of monolayer FeSe films. We also observe multilayer FeSe during low-temperature annealing, which is revealed to link with Fe vacancy formation and adatom migration. Our results document very special roles of film stoichiometry and help unravel several controversies in the properties of monolayer FeSe films.
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