石墨烯器件的电流-电压特性：Zener-Klein隧穿与缺陷的相互作用
Current-voltage characteristics of graphene devices: interplay between Zener-Klein tunneling and defects
摘要：
我们报告了一个理论/实验研究的电流-电压特性（I-V）的石墨烯器件附近的狄拉克点。I-V可以用幂律（I \propto V^α，其中1< α<= 1.5）来描述。当迁移率较低时，指数较高。这种超线性的I-V解释在Zener-Klein运输，即不同能带之间的隧道，和缺陷散射之间的相互作用。令人惊讶的是，Zener-Klein隧穿通过缺陷的存在而变得可见。
英文摘要：
We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law (I \propto V^α, with 1< α<= 1.5). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.
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