高n型InN的自补偿
Self-compensation in highly n-type InN
摘要：
用正电子湮没谱研究了高n型InN中的受主型缺陷。结果进行了比较，霍尔效应测量和计算的电子迁移率。在此基础上，研究了n型InN的自补偿现象，讨论了辐照和掺硅InN中补偿中心和散射中心的微观来源。我们发现显着的补偿，通过带负电荷的铟空位复合物，以及额外的受体型缺陷，没有或小的有效开放体积，作为散射中心，在高n型氮化铟样品。
英文摘要：
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
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