重新审视位错石墨烯片的电子性质
Revisiting the electronic properties of dislocated graphene sheets
AI总结：
本文采用与弹性理论耦合的弹性规范及 Riemann–Cartan 几何框架，研究平面石墨烯中楔形位错对电子谱的影响。
摘要：
石墨烯中位错或向错等拓扑缺陷与电子自由度之间的相互作用已得到广泛研究。在现有文献中，研究此类问题通常采用规范理论或弯曲空间 Riemann 几何方法；在几何方法中，关于缺陷的信息包含在度规和自旋联络中。然而，这些拓扑缺陷也可以与 Riemann–Cartan 几何联系起来，其中曲率和挠率发挥着重要作用。本文研究平面石墨烯片中的楔形位错与其电子自由度性质之间的相互作用。我们的方法依赖于该问题通过所谓的弹性规范与弹性理论建立的联系；在这种弹性规范中，典型系数（例如 Poisson 比）直接出现在度规中，因此也出现在电子谱中。
英文摘要：
The interplay between topological defects, such as dislocations or disclinations, and the electronic degrees of freedom in graphene has been extensively studied. In the literature, for the study of this kind of problems, it is in general used either a gauge theory or a curved spatial Riemannian geometry approach, where, in the geometric case, the information about the defects is contained in the metric and the spin-connection. However, these topological defects can also be associated to a Riemann-Cartan geometry where curvature and torsion plays an important role. In this article we study the interplay between a wedge dislocations in a planar graphene sheet and the properties of its electronic degrees of freedom. Our approach relies in its relation with elasticity theory through the so called elastic-gauge, where their typical coefficients, as for example the Poisson's ratio, appear directly in the metric, and consequently also in the electronic spectrum.
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