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arXiv 0710.4160cond-mat.mtrl-scicond-mat.other
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不同衬底上石墨烯的拉曼光谱及缺陷的影响

Raman spectroscopy of graphene on different substrates and influence of defects

Anindya Das, Biswanath Chakraborty, A. K. Sood

摘要:

我们展示了拉曼光谱随不同衬底上石墨烯层数的演变,SiO $_{2}$ /Si和导电氧化铟锡(ITO)板。对于相同层数的石墨烯,G模峰位以及G带和2D带的强度比取决于样品的制备。2D拉曼谱带在单层和双层石墨烯中具有特征线形状,捕获了它们电子结构的差异。缺陷对单层石墨烯的G带峰位置具有显著影响:取决于D拉曼带的强度,频率显示出高达12 cm $^{-1}$的蓝移,这是缺陷密度的标志。最令人惊讶的是,导电ITO板上的石墨烯的拉曼光谱显示出$\sim$ 6 cm $^{-1}$的G模式频率和$\sim$ 20 cm $^{-1}$的2D带频率的降低。G和2D带的这种红移是在单层石墨烯中首次观察到的。

英文摘要:

We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift upto 12 cm$^{-1}$ depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by $\sim$ 6 cm$^{-1}$ and the 2D band frequency by $\sim$ 20 cm$^{-1}$. This red-shift of the G and 2D bands is observed for the first time in single layer graphene.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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