Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transition from layer-by-layer oxidation to amorphous-oxide-mediated continuous oxidation as the oxidation progresses, where different pressures selectively expose different oxidation stages within a given time window. While the kinetics of the fast continuous oxidation stage is well described by the conventional Deal-Grove model, the layer-by-layer oxidation stage is dictated by reactive bond-switching mechanisms. This work provides atomistic details and a potential foundation for rational pressure-controlled oxidation of broad TMDC materials.
We report the results of an x-ray scattering study that reveals oxidation kinetics and formation of a previously unreported crystalline phase of SnO at the liquid-vapour interface of Sn. Our experiments reveal that the pure liquid Sn surface does not react with molecular oxygen below an activation pressure of \~5.0*10-6 Torr. Above that pressure a rough solid Sn oxide grows over the liquid metal surface. Once the activation pressure has been exceeded the oxidation proceeds at pressures below the oxidation pressure threshold. The observed diffraction pattern associated with the surface oxidatio…
The major chemical feature of an element is the number of electrons available for forming chemical bonds. A doctrine rooted in the atomic shell model states that the atoms will maintain a complete inner shell while interacting with other atoms. Therefore, group IA elements, for example, are invariably stable in the +1 charge state because the p electrons of their inner shells do not react with other chemical species. This general rule governs our understanding of the structures and reactions of matter and has never been challenged. In this work, we show for the first time that while mixing wit…
We present a study of the dynamical behavior of a Ziff-Gulari-Barshad model with CO desorption and lateral diffusion. Depending on the values of the desorption and diffusion parameters, the system presents a discontinuous phase transition between low and high CO coverage phases. We calculate several points on the coexistence curve between these phases. Inclusion of the diffusion term produces a significant increase in the CO_2 production rate. We further applied a square-wave periodic pressure variation of the partial CO pressure with parameters that can be tuned to modify the catalytic activi…
The possible importance of oxide formation for the catalytic activity of transition metals in heterogenous oxidation catalysis has evoked a lively discussion over the recent years. On the more noble transition metals (like Pd, Pt or Ag) the low stability of the common bulk oxides suggests primarily sub-nanometer thin oxide films, so-called surface oxides, as potential candidates that may be stabilized under gas phase conditions representative of technological oxidation catalysis. We address this issue for the Pd(100) model catalyst surface with first-principles kinetic Monte Carlo (kMC) simula…
Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin film is oxidized in open air. For an optimum oxidation duration, VO2 films are obtained with good phase transition properties. We recently reported a modified APTO process using a step temperature profile for oxidation (Thin Solid Films 706, 138003 (2020)). We demonstrated an ultra-low thermal budget synthesis of VO2 thin films with good electrical and optical …
The integration of high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to the highest oxidation ability in rare earth elements and various oxidation methods (atmospheric, high-pressure O2 and ozone) were applied to the Y metal buffer layer. By optimizing oxidation conditions of the top gate insulator, we successfully improve the capacitance of top gate Y2O3 insulator and demonstrate a large Ion/Ioff ratio for bilayer graphene under an external electric field.
Maintaining stable fluxes for multiple source elements is a challenging task when the source materials have significantly different oxygen affinities in a complex-oxide molecular-beam-epitaxy (MBE) environment. Considering that Sr is one of the most easily oxidized and widely used element in various complex oxides, we took Sr as a probe to investigate the flux stability problem in a number of different conditions. Source oxidation was less for higher flux, extended port geometry, and un-melted source shape. The extended port geometry also eliminated the flux transient after opening a source sh…
We present a detailed atomistic picture of the oxidation mechanism of Co nanoparticles and its impact on magnetism by experimentally following the evolution of the structure, chemical composition, and magnetism of individual, gas-phase grown Co nanoparticles during controlled oxidation. The early stage oxidation occurs in a twostep process characterized by (i) the initial formation of small CoO crystallites randomly distributed across the nanoparticle surface, until their coalescence leads to structural completion of the oxide shell and passivation of the metallic core; (ii) progressive conver…
The appropriateness of including Hg among the transition metals has been debated for a long time. Although the synthesis of HgF$_{4}$ molecules in gas phase was reported before, the molecules show strong instabilities and dissociate. Therefore, the transition metal propensity of Hg remains an open question. Here, we propose that high pressure provides a controllable method for preparing unusual oxidation states of matter. Using an advanced structure search method based on first-principles electronic structure calculations, we predict that under high pressures, Hg can transfer the electrons in …
The puckered surface of black phosphorus represents an ideal substrate for an unconventional arrangement of physisorbed species and the resulting specific two-dimensional chemistry of this system. This opens the way to investigate the chemical and physical properties of locally confined areas of black phosphorus without the necessity for further physical downscaling of the material. We have evaporated TCNQ on top of black phosphorus under over-saturation non-equilibrium conditions in vacuum. The evolution of linear density and height of droplets formed through oxidation during exposure to air …
The oxidation of the Pd(100) surface at oxygen pressures in the 10^-6 to 10^3 mbar range and temperatures up to 1000 K has been studied in-situ by surface x-ray diffraction (SXRD). The results provide direct structural information on the phases present in the surface region and on the kinetics of the oxide formation. Depending on the (T,p) environmental conditions we either observe a thin sqrt(5) x sqrt(5) R27 surface oxide or the growth of a rough, poorly ordered bulk oxide film of PdO predominantly with (001) orientation. By either comparison to the surface phase diagram from first-principle…
A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoOx oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, MoOx-covered MoTe2 shows a hole-dominated transport behavior. Our findings point to a simple and effective strategy for growing homogenous surface oxide film on MoTe2, which is promising for several pu…
Electronic structure and oxidation states in high-pressure synthesized isostructural CeCN$_5$ and TbCN$_5$
Linköping University（林雪平大学）；École polytechnique, Institut Polytechnique de Paris（巴黎综合理工学院，巴黎理工学院）；CNRS（法国国家科学研究中心）；Collège de France, Université PSL（法兰西学院，巴黎文理研究大学）
Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy bec…
In2S3(1-x)O3x is known from preceding studies to have a bandgap varying continuously as a function of x, the reason why this solid solution is potentially interesting in the field of photovoltaics. In this work, we present results on oxidation of In2S3 by heating in air atmosphere to obtain the desired material. The oxidation is accompanied by a mass loss due to the substitution of S by O atoms that is studied by means of thermogravimetric analysis. It appears that the temperature region in which the oxidation occurs is strongly dependent on the texture of deposited films. As-grown films depos…
Cuprous oxide (Cu2O) nanowires were grown by a simple, catalyst-free thermal oxidation method starting from a copper foil substrate. Wire growth was performed at different conditions by varying oxygen partial pressure and heating temperature, and produced structural defects such as stacking faults and twin structures of grown nanowires were characterized by transmission electron microscopy. A moderate oxygen partial pressure ~5% with a relatively high temperature at 500 oC is found to be an optimal condition for growing high-quality Cu2O nanowires, while either lowering temperature or enhancin…
We demonstrate that at the usual 1E-7 torr range of base pressures in the sputtering chamber, X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface in both Nb/Al-AlOx/Pb tunnel junctions and Nb/Al bilayers. This is due to the time elapsed between the deposition of the Nb and Al bottom layers, even at times as short as 100 s. We also give some direct evidence of the oxidation of the top Pb electrode on the Nb electrode surface. Such oxidation probably occurs at the pinholes of the intermediate Al-AlOx layer of the junctions, as a consequence of the oxi…
Present knowledge of the function of materials is largely based on studies (experimental and theoretical) that are performed at low temperatures and ultra-low pressures. However, the majority of everyday applications, like e.g. catalysis, operate at atmospheric pressures and temperatures at or higher than 300 K. Here we employ ab initio, atomistic thermodynamics to construct a phase diagram of surface structures in the (T,p)-space from ultra-high vacuum to technically-relevant pressures and temperatures. We emphasize the value of such phase diagrams as well as the importance of the reaction ki…
We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolay…
We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present oxidation method is the formation of the crystalline AlOx template layer without oxidizing the AlGaAs region near the Al/AlGaAs interface. The oxidized Al layer is not amorphous but show well-defined single crystalline feature reminiscent of the spinel gamma-AlOx phase. A spin-LED consisting of an Fe layer, a crystalline AlOx barrier layer, and an AlGaAs-InGaAs doub…
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene pi-bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene pi-bands by inserting a thin oxide layer between the buffer layer and SiC substrate using a low temperature, CMOS-compatible process that does not damage the graphene layer.
The mechanical behaviour and deformation mechanisms of magnetron-sputtered Zr/Nb nanoscale multilayers were analysed as a function of the periodicity (L = 10 and 75 nm) and annealing time at 350C (2-336 hrs). The strength of the as-deposited multilayers was independent of the layer thickness and it was controlled by the co-deformation of the Zr and Nb layers. Annealing led to transformation of the Zr layers into ZrO2 after a few hours, while the Nb layers oxidised at a much slower rate. The volumetric expansion associated with the oxidation led to the formation of cracks at the interfaces and …
We report the structural and electrical characterization of tungsten oxides formed by illuminating multi-layer tungsten diselenide (WSe2) nanosheets with an intense laser beam in the ambient environment. A noninvasive microwave impedance microscope (MIM) was used to perform electrical imaging of the samples. The local conductivity ~100 S/m of the oxidized product, measured by the MIM and conventional transport experiments, is much higher than that of the pristine WSe2, suggesting the formation of sub-stoichiometric WO3-x polycrystals with n-type carriers. With further efforts to improve the co…
Oxygen-Pressure-Limited Recovery of the Hematite α-Fe$_2$O$_3$(0001) Surface from a Reduced Fe$_3$O$_4$(111)-Like Layer
CEITEC - Central European Institute of Technology, Brno University of Technology（中欧技术研究所，布尔诺理工大学）；Institute of Physical Engineering, Brno University of Technology（物理工程系，布尔诺理工大学）
The paper presents a new approach, based on controlled oxidation of nanoscale metallic multilayers, to produce strong and hard oxide/metal nanocomposite coatings with high strength and good thermal stability. The approach is demonstrated by performing long term annealing on sputtered Zr/Nb nanoscale metallic multilayers and investigating the evolution of their microstructure and mechanical properties by combining analytical transmission electron microscopy, nano-mechanical tests and finite element models. As-deposited multilayers were annealed at 350 C in air for times ranging between 1 - 336 …
To help understand the high activity of silver as an oxidation catalyst, e.g., for the oxidation of ethylene to epoxide and the dehydrogenation of methanol to formaldehyde, the interaction and stability of oxygen species at the Ag(111) surface has been studied for a wide range of coverages. Through calculation of the free energy, as obtained from density-functional theory and taking into account the temperature and pressure via the oxygen chemical potential, we obtain the phase diagram of O/Ag(111). Our results reveal that a thin surface-oxide structure is most stable for the temperature and p…
Cracking is observed when a UO_{2} single crystal is oxidised in air. Previous studies led to the hypothesis that cracking occurs once a critical depth of U_{3}O_{7} oxidised layer is reached. We present some μ-Laue X-ray diffraction results, which evidence that the U_{3}O_{7} layer, grown by topotaxy on UO_{2}, is made of domains with different crystalline orientations. This observation was used to perform a modelling of oxidation coupling chemical and mechanical parameters, which showed that the domain patterning induces stress localisation. This result is discussed in comparison with stress…
Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with thes…
Transition metal nitrides have attracted much interest of the scientific community for their intriguing properties and technological applications. Here we focus on yttrium dinitride (YN$_{2}$) and its formation and structural transition under pressure. We employed a fixed composition USPEX search to find the most stable polymorphs. We choose yttrium as a proxy for the lanthanide series because it has only $+3$ oxidation state, contrary to most transition metals. We then computed thermodynamic and dynamical stability of these structures compared to the decomposition reactions and we found that …
The boosting effect of Cr on the growth of the protective alumina scale on Fe-Al alloys is investigated by x-ray photoelectron spectroscopy. Using low oxygen pressure the surface chemistry of the alloys is monitored starting from the first moments of oxidation. Chromium effect on the Fe-Al surface-bulk exchange is clearly detected by analyzing the measured surface concentrations within the atomic concentration models. Previous ab initio calculations agree well with the present experiments.
Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in Pt/Co/AlOx, Pt/CoOx/Co/AlOx, and PtOx/Co/AlOx layers. We show how the saturation magnetization, perpendicular magnetic anisotropy, anomalous Hall resistance, and SOT are systematically affected by the degree of oxidation of both the Pt/Co and Co/Al interfaces. Oxidation of the Co/Al interface results in a 21% and 42% variation of the dampinglike and fieldlik…
Surface oxidation of high-purity copper is accelerated under tribological loading. Tribo-oxide formation at room temperature is associated with diffusion processes along defects, such as dislocations or grain boundaries. Here, we embark on investigating the additional influence of temperature on the tribo-oxidation of copper. Dry, reciprocating sliding tests were performed with a variation of the sample temperature between 21 - 150 $^\circ$C. Microstructural changes were monitored and analyzed with state-of-the-art electron microscopy techniques. Oxide layer formation through thermal oxidation…
Investigation on oxidation resistance of two-dimensional (2D) materials is critical for many of their applications, because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layer thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C and the starting temperature of oxygen doping/oxidation of BN nanosheets only s…
Transient Surface Oxides Form on Pt(111) - But Vanish During Ammonia Oxidation
Synchrotron SOLEIL（SOLEIL同步辐射中心）；Université Grenoble Alpes, CEA Grenoble, IRIG, MEM, NRX（格勒诺布尔阿尔卑斯大学，CEA格勒诺布尔，IRIG，MEM，NRX）；Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS（材料与量子现象实验室，巴黎西岱大学，法国国家科学研究中心）；European Synchrotron Research Facility（欧洲同步辐射装置）
We report that current-induced spin-orbit torques (SOTs) in heavy-metal/ferromagnetic-metal bilayers are strongly altered by the oxidation of the ferromagnetic layer near the interface. We measured damping-like (DL) and field-like (FL) SOTs for Pt/Co and Pt/Ni$_{81}$Fe$_{19}$ (Pt/Py) films using spin-torque ferromagnetic resonance. In the Pt/Co film, we found that the oxidation of the Co layer near the interface enhances both DL and FL SOTs in spite of the insulating nature of the CoO$_x$ layer. The enhancement of the SOTs disappears by inserting a thin Ti layer at the Pt/CoO$_x$ interface, in…
Passivation mechanisms were investigated on (100)-oriented Fe-18Cr-13Ni surfaces with direct transfer between surface preparation and analysis by X-ray photoelectron spectroscopy and scanning tunneling microscopy and electrochemical characterization. Starting from oxide-free surfaces, pre-oxidation at saturation under ultra-low pressure (ULP) oxygen markedly promotes the oxide film Cr(III) enrichment and hinders/delays subsequent iron oxidation in water-containing environment. Exposure to sulfuric acid at open circuit potential causes preferential dissolution of oxidized iron species. Anodic p…
Interfacial Oxidation Enables Charge-Transfer Contacts and Degenerate n-Doping in Monolayer MoS$_2$
Elettra - Sincrotrone Trieste S.C.p.A（的里雅斯特电子同步加速器股份有限公司）；University of Udine（乌迪内大学）；University of Trieste（的里雅斯特大学）；Instituto de Ciencia de Materiales de Madrid (ICMM - CSIC)（马德里材料科学研究所（CSIC））；CNR - Istituto Officina dei Materiali (IOM)（国家研究委员会材料工坊研究所）；ArtemisProgram,U.K.Central Laser Facility, STFC Rutherford Appleton Laboratory（英国中央激光设施，STFC鲁瑟福阿普尔顿实验室）；School of Physics and Astronomy, University of St Andrews（圣安德鲁斯大学物理与天文学学院）；Department of Physics and Astronomy, Aarhus University（奥胡斯大学物理与天文学系）
Supported carbon nanosheets and carbon nanotubes served as sacrificial templates for preparing spacious TiO2 photocatalytic thin films. Amorphous TiO2 was deposited conformally on the carbonaceous template material by atomic layer deposition (ALD). Upon calcination at 550°C, the carbon template was oxidatively removed and the as-deposited continuous amorphous TiO2 layers transformed into interlinked anatase nanoparticles with an overall morphology commensurate to the original template structure. The effect of type of template, number of ALD cycles and gas residence time of pollutant on the pho…
SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pumping experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which all…
Despite their importance, chemical reactions confined in a low dimensional space are elusive and experimentally intractable. In this work, we report doubly anisotropic, in-plane and out-of-plane, oxidation reactions of two-dimensional crystals, by resolving interface-confined thermal oxidation of a single and multilayer MoS2 supported on silica substrates from their conventional surface reaction. Using optical second-harmonic generation spectroscopy of artificially stacked multilayers, we directly proved that crystallographically oriented triangular oxides (TOs) were formed in the bottommost l…
The oxidation of α-Ti(0001) surface was studied using density functional theory. In order to enhance the oxidation resistance, we substituted Ti atoms with Si atoms in Ti(0001) surface. We observe that Si prefers to segregate at the surface layer of Ti(0001) compared to other sub-surface layers. The Si solubility on the Ti(0001) surface was estimated to be around 75 at.%. While Si segregation was found to reduce the binding between the oxygen atom and the Ti(0001) surface, the barrier for oxygen to diffuse into the slab increases. The dissociation of the oxygen molecule on the clean and Si seg…
In recent years due to improvements in calculation methods and increased computer power, it has become possible to perform first-principles investigations for ``simple'' chemical reactions at surfaces. We have carried out such studies for the catalytic oxidation of CO at transition metal surfaces, in particular, at the ruthenium surface for which unusual behavior compared to other transition metal catalysts has been reported. High gas pressure catalytic reactor experiments have revealed that the reaction rate over Ru for oxidizing conditions is the highest of the transition metals considered -…
A comprehensive picture of the aging and oxidation of the (0001) surface of Bi2Se3 is critical to understanding the physical origin of changes in its topologically protected surface states. We find that surface aging in ambient conditions occurs in two major steps. Within two hours of exfoliation, a series of ~ 3.6 A high islands are observed by atomic force microscopy over approximate 10% of the surface. Subsequently, patch growth stops, and oxidation begins after the two hours and continues until one quintuple layer has been oxidized. X-ray photoelectron spectroscopy shows no sign of oxidati…
Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for the semiconductor industry in the 1950s. In state-of-the-art device technology, SiO$_2$ is widely used as an insulator in combination with high-$k$ dielectrics such as HfO$_2$, demanding fabrication of ultra-thin interfacial layers. The classical standard model derived by Deal and Grove accurately describes the oxidation of Si in a progressed stage, however, strongly underestimates growth rates for thin oxide layers. Recent studies report a variety of oxidation mechanisms during the growth of ox…
Based on first-principles calculations we performed a systematic study of the energetic stability, structural characterization, and electronic properties of the fully oxidized $A_{2}B$, electrenes, with the following combinations, (i) $A$=Ca, Sr, and Ba for $B$=N; (ii) $A$=Sr and Ba for $B$=P; and Y$_{2}$C, and Ba$_{2}$As. We have considered one side oxidation of single layer electrenes $(O/A_{2}B)$, and two side oxidation of bilayer electrenes $(O/(A_{2}B)_{2}/O)$. We show that the hexagonal lattice of the pristine host is no longer the ground state structure in the oxidized systems. Our tota…
The spontaneous oxidation of dopamine in slightly alkaline solutions was investigated on the basis of the work of Lee and others [Science, 318:426-430, 2007], and the reaction product was identified as dopamine-melanin. The ability of melanin to covalently bind amine functional groups was confirmed by quantification of the corresponding binding sites on dopamine-melanin aggregates. Furthermore it is possible to redissolve dopamine-melanin aggregates in strongly alkaline solutions. The obtained small melanin grains were used to build layer-by-layer deposits with poly(diallyldimethylammonium). D…
Recent experiments revealed an anomalous dependence of carbon monoxide oxidation at Ru(0001) on oxygen pressure and a particularly high reaction rate. Below we report density functional theory calculations of the energetics and reaction pathways of the speculated mechanism. We will show that the exceptionally high rate is actuated by a weakly but nevertheless well bound (1x1) oxygen adsorbate layer. Furthermore it is found that reactions via scattering of gas-phase CO at the oxygen covered surface may play an important role. Our analysis reveals, however, that reactions via adsorbed CO molecul…
Plasma electrolytic oxidation (PEO) is a process for obtaining oxide coatings on valve metals. Mostly PEO is done in an aqueous solution electrolyte which limits the size of treated parts due to the system heating up. In presented work an alternative method of PEO processing applied in aluminum 1050 alloy in nitrate molten salt was investigated. The morphology, phase and chemical compositions, micro-hardness, and corrosion resistance were examined using. The obtained results showed that formed coating contains from two sub-layers, outer soft layer with the thickness of 4 micrometer and inner, …
