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arXiv 1403.1002cond-mat.mtrl-sci
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原子级薄氮化硼纳米片的强抗氧化性

Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets

Lu Hua Li, Jiri Cervenka, Kenji Watanabe, Takashi Taniguchi, Ying Chen

摘要:

研究二维材料的抗氧化性对于它们的许多应用是至关重要的,因为二维材料由于占主导地位的表面原子和结构畸变而具有比它们的本体对应物更高的氧化动力学。在这项研究中,高品质的氮化硼(BN)纳米片的1-4层厚的氧化行为进行了研究,通过在空气中加热。原子力显微镜和拉曼光谱分析表明,单层BN纳米片可以承受高达850 °C的温度,BN纳米片的氧掺杂/氧化起始温度仅随纳米片层数的增加而略有增加,并取决于加热条件。在氧化单层BN纳米片上发现了拉长的蚀刻线,这表明BN纳米片首先沿着化学吸附的氧链被切割,然后氧化蚀刻垂直于这些切割线生长。BN纳米片更强的抗氧化性表明它们比石墨烯更适合高温应用。

英文摘要:

Investigation on oxidation resistance of two-dimensional (2D) materials is critical for many of their applications, because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layer thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C and the starting temperature of oxygen doping/oxidation of BN nanosheets only slightly increases with the increase of nanosheet layer and depends on heating conditions. Elongated etch lines are found on the oxidized monolayer BN nanosheets, suggesting that the BN nanosheets are first cut along the chemisorbed oxygen chains and then the oxidative etching grows perpendicularly to these cut lines. The stronger oxidation resistance of BN nanosheets suggests that they are more preferable for high-temperature applications than graphene.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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