Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration and non-linear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.
Investigation on oxidation resistance of two-dimensional (2D) materials is critical for many of their applications, because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layer thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C and the starting temperature of oxygen doping/oxidation of BN nanosheets only s…
Although the high impermeability of graphene makes it an excellent barrier to inhibit metal oxidation and corrosion, graphene can form a galvanic cell with the underlying metal that promotes corrosion of the metal in the long term. Boron nitride (BN) nanosheets which have a similar impermeability could be a better choice as protective barrier, because they are more thermally and chemically stable than graphene and, more importantly, do not cause galvanic corrosion due to their electrical insulation. In this study, the performance of commercially available BN nanosheets grown by chemical vapor …
Atomically thin boron nitride (BN) nanosheets have been found an excellent substrate for noble metal particles enabled surface enhanced Raman spectroscopy (SERS), thanks to their good adsorption of aromatic molecules, high thermal stability and weak Raman scattering. Faceted gold (Au) nanoparticles have been synthesized on BN nanosheets by a simple but controllable and reproducible sputtering and annealing method. The size and density of the Au particles can be controlled by sputtering time, current and annealing temperature etc. Under the same sputtering and annealing conditions, the Au parti…
Atomically thin boron nitride (BN) is an important two-dimensional (2D) nanomaterial, with many properties distinct from graphene. In this feature article, these unique properties and associated applications often not possible from graphene are outlined. The article starts with characterization and identification of atomically thin BN. It is followed by demonstrating their strong oxidation resistance at high temperatures and applications in protecting metals from oxidation and corrosion. As flat insulators, BN nanosheets are ideal dielectric substrates for surface enhanced Raman spectroscopy (…
Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviors quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers …
Nanopores in 2D materials are highly desirable for DNA sequencing, yet achieving single-stranded DNA (ssDNA) transport through them is challenging. Using density functional theory calculations and molecular dynamics simulations we show that ssDNA transport through a pore in monolayer hexagonal boron nitride (hBN) is marked by a basic nanomechanical conflict. It arises from the notably inhomogeneous flexural rigidity of ssDNA and causes high friction $\textit{via}$ transient DNA desorption costs exacerbated by solvation effects. For a similarly sized pore in bilayer hBN, its self-passivated ato…
Surface enhanced Raman spectroscopy (SERS) is a useful multidisciplinary analytic technique. However, it is still a challenge to produce SERS substrates that are highly sensitive, reproducible, stable, reusable, and scalable. Here, we demonstrate that atomically thin boron nitride (BN) nanosheets have many unique and desirable properties to help solve this challenge. The synergic effect of the atomic thickness, high flexibility, stronger surface adsorption capability, electrical insulation, impermeability, high thermal and chemical stability of BN nanosheets can increase the Raman sensitivity …
The compressive strain induced work function modulation in boron nitride nanosheets (BNNS) has been studied. The compressive strain arose due to the irradiation of 30 keV Au beam on thin films of BNNS. Before irradiation BNNS was characterized by Raman spectroscopy, UV-Vis spectroscopy, where using Tauc plot the bandgap of chemically synthesized BNNS from commercial hBN powder has been calculated as well as the layer numbers on thin films also quantified using an empirical relation exploiting the full width at half maxima (FWHM) of Raman peak of BNNS. The Scanning Electron Microscopy (SEM) ima…
We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can …
Photocatalytic nitrogen reduction is the promising way for ammonia production, the question now is that the search of highly active and low active catalysts. Based on the first-principles calculation, single boron atom is anchored on the g-C$_2$N to form B/g-C$_2$N, the results show that B/g-C$_2$N can serve as a potential photocatalyst for N$_2$ fixation. The introduction of B atom to g-C$_2$N, the energy gap will reduce from 2.45 eV to 1.21 eV, and also show strong absorption in the visible light region. In addition, N$_2$ can be efficiently reduced on B/g-C$_2$N through the enzymatic mechan…
In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-…
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in other 2D materials create pores of irregular geometry with imprecise diameters. By taking advantage of the preferential growth of boron vacancies in hBN under electron beam irradiation, we are able to observe the pore growth via transmission electron microscopy, and terminate the process when the pore has reached its desired size. Careful control of beam conditions allows us to nucleate and grow individual triangular an…
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni sub…
Raman spectroscopy has become an essential technique to characterize and investigate graphene and many other two-dimensional materials. However, there still lacks consensus on the Raman signature and phonon dispersion of atomically thin boron nitride (BN), which has many unique properties distinct from graphene. Such a knowledge gap greatly affects the understanding of basic physical and chemical properties of atomically thin BN as well as the use of Raman spectroscopy to study these nanomaterials. Here, we use both experiment and simulation to reveal the intrinsic Raman signature of monolayer…
Laterally large (~3 micrometers), atomically-thin two-dimensional (2D) Bi2O2CO3 nanosheets (2D bismuth oxycarbonate, 2D bismutite) are fabricated via sonochemically-assisted template-free synthesis. Key to the synthesis of the freestanding, laterally large 2D Bi2O2CO3 nanosheets from bulk Bi powder is choice of suspension medium, controlled reaction temperatures and several hours processing time. Lateral sizes of 2D Bi2O2CO3 can be controlled between micrometer-sized nanosheets and tens of nm sized nanoflakes solely based on the choice of suspension medium. The here introduced 2D Bi2O2CO3 nano…
Luminescent metal-organic frameworks (LMOFs) are promising materials for organic light-emitting diode (OLED) alternatives to silicate-based LEDs due to their tuneable structure and programmability. Yet, the 3D nature of LMOFs creates challenges for stability, optical transparency, and device integration. Metal-organic nanosheets (MONs) potentially overcome these limitations by combining the benefits of MOFs with an atomically thin morphology of large planar dimensions. Here, we report the bottom-up synthesis of atomically thin ZIF-7-III MONs via facile low-energy salt-templating. Employing gue…
Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study on the GB structures in CVD-grown polycrystalline h-BN monolayer films by transmission electron microscope. Interestingly, most of these GBs are revealed to be formed via overlapping between neighbor…
Tin sulfide promises very interesting properties such as a high optical absorption coefficient and a small band gap, while being less toxic compared to other metal chalcogenides. However, the limitations in growing atomically thin structures of tin sulfide hinder the experimental realization of these properties. Due to the flexibility of the colloidal synthesis, it is possible to synthesize very thin and at the same time large nanosheets. Electrical transport measurements show that these nanosheets can function as field-effect transistors with high on/off ratio and p-type behavior. The tempera…
The emerging new paradigm of technologies, the internet of things, entails a process of device miniaturization to combine several functional components, such as sensors, actuators, and powering elements, in a single individual on-chip platform. An essential requirement is for the devices to have a small footprint and thus to be extended over three-dimensions to present adequate performance. A suitable technique to realize devices of complex architectures and virtually any size is three-dimensional printing. So far its use has seen applications exclusively at the macroscale. Here we report the …
Heat management becomes more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation and favorable mechanical properties is of great importance. Here, we report that high-quality monolayer boron nitride (BN) has a thermal conductivity (\k{appa}) of 751 W/mK at room temperature. Though smaller than that of graphene, this value is larger than that of cubic boron nitride (cBN) and only second to those of diamond and lately discovered cubic boron arsenide (BAs). Monolayer BN has the second largest \k{appa}…
The metal diborides are a class of ceramic materials with crystal structures consisting of hexagonal sheets of boron atoms alternating with planes of metal atoms held together with mixed character ionic/covalent bonds. Many of the metal diborides are ultrahigh temperature ceramics like HfB$_2$, TaB$_2$, and ZrB$_2$, which have melting points above 3000$^\circ$C, high mechanical hardness and strength at high temperatures, and high chemical resistance, while MgB$_2$ is a superconductor with a transition temperature of 39 K. Here we demonstrate that this diverse family of non-van der Waals materi…
Recent synthesis of monolayer borophene (triangle boron monolayer) on the substrate opens the era of boron nanosheet (Science, 350, 1513, $\mathbf{2015}$), but the structural stability and novel physical properties are still open issues. Here we demonstrated borophene can be stabilized with fully surface hydrogenation, called as borophane, from first-principles calculations. Most interesting, it shows that borophane has direction-dependent Dirac cones, which are mainly contributed by in-plane \emph{p$_{x}$} and \emph{p$_{y}$} orbitals of boron atoms. The Dirac fermions possess an ultrahigh Fer…
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each trilayer is made by successively stacking an InSb nanosheet on an hBN flake and on a graphite flake using a home-made alignment stacking/transfer setup. The fabricated single- and double-gate devices are …
The field of plasmonics seeks to find materials with an intensive plasmon (large plasmon pole weight) with low Landau, phonon and other losses (small decay width). In this paper we propose a new class of materials that show exceptionally good plasmonic properties. These materials consist of van der Waals stacked 'plasmon active' layers (atomically thin metallic layers) and 'supporting' layers (atomically thin wide band gap insulating layers). One such material that can be experimentally realized - lithium intercalated hexagonal boron-nitride is studied in detail. We show that its 2D plasmon in…
Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes and SiO$_2$ substrates. We compared their Raman response as a function of charge carrier density using an ion gel as a top gate. The G peak position, 2D peak position, 2D peak width and the ratio of the 2D peak area to the G peak area show a dependence on carrier density that differs for hBN compared to SiO$_2$. Histograms of two-dimensional mapping are used…
There is a large discrepancy between the experimental observations and the theoretical predictions in the morphology of hexagonal boron nitride (h-BN) nanosheets. Theoretically-predicted hexagons terminated by armchair edges are not observed in experiments; and experimentally-observed triangles terminated by zigzag edges are found theoretically unstable. There are two key issues in theoretical investigations, namely, an efficient and accurate algorithm of absolute formation energy of h-BN edges, and a good understanding of the role of hydrogen passivation during h-BN growth. Here, we first pro…
Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k up to 1009 W/mK at room temperature. We find that the isotope engineering mainly suppresses the out-of-plane optical (ZO) phonon scatterings in BN, which subsequently reduces acoustic-optical scatterin…
Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science approach based on advanced spectroscopy and imaging techniques to investigate the evolution of surface stoichiometry and chemical intermediates at each reaction step. During oxygen exposure at increasing temperatures, we observed progressive and subsequent intercalation of oxygen, and selective etching of graphene accompanied by the oxidation of boron. Additionall…
We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images reveal silicon atoms exclusively filling boron vacancies. This structure is stable enough under electron beam for repeated imaging. Density functional theory (DFT) is used to study the energetics, structure and properties of the experimentally observed structure. The formation energies of all possible charge states of the different silicon substitutions (Si$_…
We have studied the elastic deformation of freely suspended atomically thin sheets of muscovite mica, a widely used electrical insulator in its bulk form. Using an atomic force microscope, we carried out bending test experiments to determine the Young's modulus and the initial pre-tension of mica nanosheets with thicknesses ranging from 14 layers down to just one bilayer. We found that their Young's modulus is high (190 GPa), in agreement with the bulk value, which indicates that the exfoliation procedure employed to fabricate these nanolayers does not introduce a noticeable amount of defects.…
Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other 2D materials to templating growth of molecular layers. We have studied the structure of monolayer h-BN grown by chemical vapour deposition on Ir(111) by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) experiments and state-of-the-art density functional theory (DFT) calculations. The lattice-mismatch between the h-BN and Ir(111) surface results in the formation of a moiré superstru…
Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nitride (hBN) is the dominant choice due to its large bandgap, atomic flatness, low defect density, and encapsulation properties. However, the broad catalogue of 2D insulators offers exciting opportuniti…
The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices, as it is insulating, atomically fl…
Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared to those of nanosheets mechanically exfoliated from them. First the link between the presence of structural defects and the recombination intensity of bound-excitons, the so-called D series, is confir…
Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics. However, non-classical photon emission from these materials has not been achieved to date. Here we report room temperature quantum emission from hexagonal boron nitride nanoflakes. The single photon emitter exhibits a combination of superb quantum optical properties at room temperature that include the highest brightness reported in the visible part of the spectrum, narrow line width, absolute photo-stabilit…
The atomically-precise controlled synthesis of graphene stripes embedded in hexagonal boron nitride opens up new possibilities for the construction of nanodevices with applications in sensing. Here, we explore properties related to electronic structure and quantum transport of a graphene nanoroad embedded in hexagonal boron nitride, using a combination of density functional theory and the non-equilibrium Green's functions method to calculate the electric conductance. We find that the graphene nanoribbon signature is preserved in the transmission spectra and that the local current is mainly con…
Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over interlayer interactions by locally modifying the interlayer separation between graphene and boron nitride, which we achieve by applying pressure with a scanning tunneling microscopy tip. For the spec…
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WS…
Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting transition metal dichalcogenides (TMD) have attracted interest to design model 2D "donor-acceptor" systems and new optoelectronic components. Here, using of Raman scattering and photoluminescence spectroscopies, we report a comprehensive characterization of a molybedenum diselenide (MoSe$_2$) monolayer deposited onto hexagonal boron nitride (hBN) and capped b…
Growth of two-dimensional metals has eluded materials scientists since the discovery of the atomically thin graphene and other covalently bound 2D materials. Here, we report a two-atom-thick hexagonal copper-gold alloy, grown through thermal evaporation on freestanding graphene and hexagonal boron nitride. The structures are imaged at atomic resolution with scanning transmission electron microscopy and further characterized with spectroscopic techniques. Electron irradiation in the microscope provides sufficient energy for a phase transformation of the 2D structure--atoms are released from the…
By means of ab initio calculations we investigate the possibility of existence of a boron nitride (BN) porous two-dimensional nanosheet which is geometrically similar to the carbon allotrope known as biphenylene carbon. The proposed structure, which we called Inorganic Graphenylene (IGP), is formed spontaneously after selective dehydrogenation of the porous Boron Nitride (BN) structure proposed by Ding et al. We study the structural and electronic properties of both porous BN and IGP and it is shown that, by selective substitution of B and N atoms with carbon atoms in these structures, the ban…
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains …
