arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2312.09136cond-mat.mtrl-sci
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定制用于高性能二维电子器件的非晶氮化硼

Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics

Cindy Y. Chen, Zheng Sun, Riccardo Torsi, Ke Wang, Jessica Kachian, Bangzhi Liu, Gilbert B. Rayner, Zhihong Chen, Joerg Appenzeller, Yu-Chuan Lin, Joshua A. Robinson

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27 pages, 4 figures
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AI总结：

针对二维表面难形成均匀介电层导致器件性能下降的问题，本研究开发了晶圆级低温ALD工艺制备高稳定性aBN薄膜，构建相关器件验证其对二维材料性能的提升作用，为下一代二维电子器件实现理论性能铺路。

摘要：

近年来，二维（2D）材料因其原子级厚度的结构以及独特的电子和光电子特性受到了广泛关注。为了充分发挥其在下一代电子和光子器件中的应用潜力，精确控制二维材料周围的介电环境至关重要。二维表面缺乏成核位点，难以形成薄而均匀的介电层，这往往会导致界面缺陷，进而降低器件性能，成为实现二维基器件的主要障碍。在此，我们展示了一种晶圆级、低温（<250 °C）的工艺，该工艺采用原子层沉积（ALD，atomic layer deposition）合成均匀、共形的非晶氮化硼（aBN，amorphous boron nitride）薄膜。在125至250 °C的ALD沉积温度下，可制备出具有高氧化稳定性的化学计量比薄膜，其介电强度达8.2 MV/cm。我们采用无籽晶ALD方法，在二维表面形成均匀的aBN介电层，并制备了aBN/MoS₂多量子阱结构以及aBN封装的双栅单层（ML，monolayer）MoS₂场效应晶体管，以评估aBN介电环境对MoS₂光电子和电子特性的影响。我们在可扩展aBN介电集成方面的工作，为实现二维材料在下一代电子器件中的理论性能铺平了道路。

英文摘要：

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (< 250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS2 and aBN-encapsulated double-gated monolayer (ML) MoS2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

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