双倍谐波研究热氧化的单层和少层2H-MoS2
Second harmonic study of thermally oxidized mono- and few-layer 2H-MoS2
AI总结：
研究通过二次谐波显微镜监测热氧化对单层和少层2H-MoS2结构的影响，揭示氧化深度和层依赖性，并通过理论计算支持实验结果。
摘要：
本文全面研究了热氧化MoS2晶片（厚度从单层到七层）的二次谐波产生行为。观察到非处理和氧化的MoS2的基本非线性行为表明，氧化导致所有研究结构的二次谐波（SH）响应发生显著变化。通过激发功率依赖性测量分析氧化时间与非线性行为的关系，发现最大氧化时间六小时内氧化程度逐渐增加。此外，极化依赖性测量揭示了氧化引起的结构变化。还发现氧化深度限制在最上层，且氧化行为具有层依赖性。这些发现得到了理论带结构计算的支持。结果表明，通过跟踪非共振和非侵入性SH显微镜中非线性响应的特征指纹，可以监测二维MoS2的热氧化进程。
英文摘要：
A comprehensive study of second harmonic generation on thermally oxidized MoS2 flakes with thickness ranging from monolayer up to seven layers is presented. Observing the fundamental nonlinear behavior for non-treated and oxidized MoS2 reveals that oxidation causes significant changes in the second harmonic (SH) response for all investigated structures. Excitation power dependent measurements to analyze the nonlinear behavior with respect to the oxidation time show progressive oxidation within the maximum oxidation time of six hours, under the considered oxidation conditions. Here, polarization dependent measurements reveal the structural changes due to oxidation. Additionally, it is found that the oxidation depth is restricted to the top most layer and the oxidation behavior exhibits a layer dependency. These findings are supported by theoretical band structure calculations. The results demonstrate that the thermal oxidation progress of two dimensional MoS2 can be monitored with non-resonant and non-invasive SH microscopy, by following distinct fingerprints of structural modification in the nonlinear response.
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