用于自旋电子学应用的、在热氧化硅衬底上采用[001]织构Ag缓冲层制备的[001]取向多晶Heusler合金薄膜的生长
Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications
AI总结：
本研究针对半金属Heusler合金实用化需求，通过在溅射Ar中通入N₂制备[001]取向Ag缓冲层，在热氧化Si衬底上得到具有B2有序、饱和磁化强度接近理论值的强[001]取向多晶CFGG薄膜，为工业级自旋电子器件提供高自旋极化电流源。
摘要：
要将半金属Heusler合金应用于磁传感器、磁存储器等实用自旋电子器件，关键是制备出高织构、结构有序的多晶薄膜。本研究在热氧化Si衬底上制备了多晶Co₂FeGa₀.₅Ge₀.₅（CFGG）Heusler合金薄膜，该薄膜沉积于[001]取向的Ag缓冲层上；而该Ag缓冲层是通过在溅射过程中向Ar中通入N₂实现的。我们获得了具有B2有序结构的强[001]取向CFGG薄膜，其饱和磁化强度高，接近理论值，可为具备工业可行性的自旋电子器件提供高自旋极化的电荷电流与自旋电流源。
英文摘要：
To utilize half-metallic Heusler alloys in practical spintronic devices, such as magnetic sensors and magnetic memories, the key is to realize highly textured and structurally ordered polycrystalline thin films. In this study, we fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into Ar during the sputtering process, on a thermally oxidized Si substrate. We obtained strongly [001]-oriented CFGG films with B2 ordering and a high saturation magnetization close to the theoretical value, which can provide highly spin-polarized electric and spin current sources in spintronic devices with industrial viability.
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