Recent experimental observation of unexpectedly large current-induced spin-orbit torque in surface oxidized Cu on top of a ferromagnet suggested a possible role of the orbital Rashba effect (ORE). With this motivation, we investigate the ORE from first principles by considering an oxygen monolayer on top of a Cu(111) film. We show that surface oxidization of Cu film leads to gigantic enhancement of the ORE for states near the Fermi surface. The resulting chiral orbital texture in the momentum space is exceptionally strong, reaching $\sim 0.5\hbar$ in magnitude. We find that resonant hybridization between O $p$-states and Cu $d$-states is responsible for the emergence of the ORE. We demonstrate that application of an external electric field generates huge orbital Hall current, which is an order of magnitude larger than the spin Hall current found in heavy metals. This implies that "orbital torque" mechanism may be significant in surface oxidized Cu/ferromagnet structures. It also encourages experimental verification of the orbital texture in surface oxidized Cu through optical measurements such as angle-resolved photoemission spectroscopy.
We report on development of controllably oxidized CoFeB ferromagnetic films demonstrating the extraordinary Hall effect (EHE) resistivity exceeding 1 Ohmcm and magnetic field sensitivity up to 10^6 Ohm/T. Such EHE resistivity is four orders of magnitude higher than previously observed in ferromagnetic materials, while sensitivity is two orders larger than the best of semiconductors
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport properties within the ballistic regime. The variation of the electron transmission as a function of film thickness as well as the different contributions to the overall electron transmission as a function of depth into the the films is examined. Transmission at the oxidized copper film surfaces is found to be universally low. Films with thickness greater than 2.7 nm …
The spin-Seebeck effect mediated thermoelectric energy conversion can provide efficient alternative to traditional thermoelectrics for waste heat recovery. To achieve this goal, efficient spin to charge conversion using earth-abundant materials is essential. Proximity induced Rashba effect arises from the charge potential mediated by structural inversion asymmetry, which has been reported in Si thin films and can be manipulated by controlling the thickness of Rashba layer. We demonstrate a giant Rashba spin-Seebeck effect in NiFe/p-Si (polycrystalline) bilayer thin films. The bilayer thin film…
In this work we report results of step-by-step modeling of the oxidation of free-standing boron monolayers of different types. Results of the calculations demonstrate that the process of the oxidation is always exothermic and lead toward the formation of foam-like boron oxide films with incorporated non-oxidized small boron clusters. Some of these boron-oxide films demonstrate the presence of chemically stable magnetic centers. Evaluation of the physical properties of oxidized boprophene sheets (OBS) demonstrate it possible application in solar energy, as sensors and coating against leakage of…
A tight-binding model of bcc tungsten that includes spin-orbit coupling is developed and applied to the surface states of (110) tungsten thin films. The model describes accurately the anisotropic Dirac cone-like dispersion and Rashba-like spin polarization of the surface states, including the crucial effect of the relaxation of the surface atomic layer of the tungsten towards the bulk. It is shown that the surface relaxation affects the tungsten surface states because it results in increased overlaps between atomic orbitals of the surface atomic layer and nearby layers whereas electric fields …
In this paper, we report on the fabrication and the low-temperature characterization of extremely high-ohmic microstrip resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage-current characteristics were measured at temperatures down to $T \sim \unit[20]{mK}$ for films with sheet resistivity up to as high as $\sim \unit[7]{kΩ}$, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Fu…
Optical control of Dirac surface states (SS) in topological insulators (TI) remains one of the most challenging problems governing their potential applications in novel electronic and spintronic devices. Here, using visible-range transient absorption spectroscopy exploiting ~340 nm (~3.65 eV) pumping, we provide evidence for dynamic opening of a gap in Dirac SS of the thin-film 3D TI Bi2Se3, which has been induced by the dynamic Rashba effect occurring in the film bulk with increasing optical pumping power (photoexcited carrier density). The observed effect appears through the transient absorp…
We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We have imaged the aggregated layer with scanning tunneling microscopy (STM) as well as scanning electron microscopy (SEM). The amount of the aggregated material increases with the number of STM scans and with the tunneling voltage. Film thicknesses of up to 10 nm with five successive STM measurements have been obtained.
In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The mis-alignment between the magnetization and the non-equilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, ie $\bm{T}=T_{\bot}\hat{\bm{y}}\times{\hat{\bm m}}+T_{\parallel}{\hat{\bm m}}\times({\hat{\bm y}}\times{\hat{\bm m}})$. Numerical simulations on a…
In this work we have investigated the effect of Rashba splitting on the RKKY interaction in TI thin film both at finite and zero chemical potential. We find that the spin susceptibility of Rashba materials including TI thin film is strongly dependent on the direction of distance vector. Moreover, we find another term in the off-diagonal terms of the spin-susceptibility tensor which in contrast to the well-known DM-like term is symmetric. We show how one can tune the RKKY interaction by using electric field applied perpendicularly to the surface plane and by small chemical doping giving rise to…
We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance …
The presence of a finite Berry curvature $\left(Ω\left(k\right)\right)$ leads to anomalous thermal effects. In this letter, we compute the coefficients for the anomalous Nernst effect $\left(ANE\right) $ and its spin analogue, the spin Nernst effect $\left(SNE\right)$ in lead chalcogenide (\textit{PbX}; \textit{X} = S, Se, Te) films. The narrow gapped \textit{PbX} films with a large spin-orbit coupling (\textit{soc}) offer a significant Rashba interaction that gives rise to $ Ω\left(k\right) $ and the attendant anomalous thermal behaviour. In presence of a temperature gradient, the $ ANE $ and…
A non-vanishing electric field inside a non-centrosymmetric bulk crystal transforms into a momentum- dependent magnetic field, namely, a spin-orbit field (SOF). SOFs are of great use in spintronics because they enable spin manipulation via the electric field. At the same time, however, spintronic applications are severely limited by the SOF, as electrons traversing the SOF easily lose their spin information. Here, we propose that in-plane ferroelectricity in (001)-oriented SnTe thin films harness the Janus-faced SOF in a reconcilable way to enable electrical spin controllability and suppress s…
We study the optically induced torques in thin film ferromagnetic layers under excitation by circularly polarized light. We study cases both with and without Rashba spin-orbit coupling using a 4-band model. In the absence of Rashba spin-orbit coupling, we derive an analytic expression for the optical torques, revealing the conditions under which the torque is mostly derived from optical spin transfer torque (i.e. when the torque is along the direction of optical angular momentum), versus when the torque is derived from the inverse Faraday effect (i.e. when the torque is perpendicular to the op…
Magnetic anisotropy in an antiferromagnet (AFM) with inversion symmetry breaking (ISB) is investigated. The magnetic anisotropy energy (MAE) resulting from the Rashba spin-orbit and s-d type exchange interactions is determined for two different models of AFMs. The global ISB model, representing the effect of a surface, an interface, or a gating electric field, results in an easy-plane magnetic anisotropy. In contrast, for a local ISB model, i.e., for a noncentrosymmetric AFM, perpendicular magnetic anisotropy (PMA) arises. Both results differ from the ferromagnetic case, in which the result fo…
Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue …
We investigate from first principles the field-like spin-orbit torques (SOTs) in a Ag$_{2}$Bi-terminated Ag(111) film grown on ferromagnetic Fe(110). We find that a large part of the SOT arises from the spin-orbit interaction (SOI) in the Ag$_{2}$Bi layer far away from the Fe layers. These results clearly hint at a long range spin transfer in the direction perpendicular to the film that does not originate in the spin Hall effect. In order to bring evidence of the non-local character of the computed SOT, we show that the torque acting on the Fe layers can be engineered by the introduction of Bi…
Motivated by recent experimental studies of thin-film devices containing a single ferromagnetic layer, we develop a quantum kinetic theory of current-induced magnetic torques in Rashba-model ferromagnets. We find that current-induced spin-densities that are responsible for the switching behavior are due most essentially to spin-dependent quasiparticle lifetimes and derive analytic expressions for relevant limits of a simple model. Quantitative model parameter estimates suggest that spin-orbit coupling in the adjacent metal normal magnetic layer plays an essential role in the strength of the sw…
Magnetic anisotropy controls the orientational stability and switching properties of magnetic states, and therefore plays a central role in spintronics. First-principles density-functional-theory calculations are able, in most cases, to provide a satisfactory description of bulk and interface contributions to the magnetic anisotropy of particular film/substrate combinations. In this paper we focus on achieving a simplified understanding of some trends in interfacial magnetic anisotropy based on a simple tight-binding model for quasiparticle states in a heavy-metal/ferromagnetic-metal bilayer f…
Spin electromagnetic fields driven by the Rashba spin-orbit interaction, or Rashba-induced spin Berry's phase, in ferromagnetic metals is theoretically studied based on the Keldysh Green's function method. Considering a limit of strong sd coupling without spin relaxation (adiabatic limit), the spin electric and magnetic fields are determined by calculating transport properties. The spin electromagnetic fields turn out to be expressed in terms of a Rashba-induced effective vector potential, and thus they satisfy the Maxwell's equation. In contrast to the conventional spin Berry's phase, the Ras…
We present theoretical studies of the influence of spin orbit coupling on the spin wave excitations of the Fe monolayer and bilayer on the W(110) surface. The Dzyaloshinskii-Moriya interaction is active in such films, by virtue of the absence of reflection symmetry in the plane of the film. When the magnetization is in plane, this leads to a linear term in the spin wave dispersion relation for propagation across the magnetization. The dispersion relation thus assumes a form similar to that of an energy band of an electron trapped on a semiconductor surfaces with Rashba coupling active. We also…
Au(111) or similar noble metal surfaces feature Tamm-Shockley surface states that are known to possess considerable spin-orbit splitting of the Rashba type of order $Δ=0.1$ eV. When interacting with an electromagnetic field such states are expected to have resonances when the frequency of the field is near the energy of the spin-orbit splitting $Δ$. These resonances originate in the intersubband transitions between spin-split subbands. Such resonances can be observed in the frequency dependence of the surface impedance. Plasmons in thin metal films are gapless and can be strongly affected by t…
We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron garnet thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (lambda_IREE), increases dramatically as the film thickness is increased from 2 quintuple layers, saturating above 6 quintuple layers. This suggests a dominant role of surface stat…
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance …
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce …
We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy, or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages …
We present magnetoresistance measurements performed on ultrathin films of amorphous Ni and Fe. In these films the Curie temperature drops to zero at small thickness, making it possible to study the effect of ferromagnetism on localization. We find that non-ferromagnetic films are characterized by positive magnetoresistance. This is interpreted as resulting from weak antilocalization due to strong Bychkov-Rashba spin orbit scattering. As the films become ferromagnetic the magnetoresistance changes sign and becomes negative. We analyze our data to identify the individual contributions of weak lo…
In low-dimensional structures with strong Rashba spin-orbit interaction (SOI), the Coulomb fields between moving electrons produce a SOI component of the pair interaction that competes with the potential Coulomb repulsion. If the Rashba SOI constant of the material is sufficiently high, the total electron-electron interaction becomes attractive, which leads to the formation of the two-electron bound states. We show that because of the dielectric screening in a thin film the binding energy is significantly higher as compared to the case of the bulk screening.
Spin motive force induced by the Rashba interaction in the presence of strong sd interaction between conduction electron and localized spin is theoretically studied. The motive force is calculated by evaluating the time-derivative of the current density on the basis of microscopic formalism. It is shown that there are two motive forces, one proportional to $\EvR\times\dot{\nv}$, the other, perpendicular component, proportional to $\EvR\times(\nv\times\dot{\nv})$, where $\EvR$ and $\nv$ are the Rashba electric field and localized spin direction, respectively. The second type arises in the stron…
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d exchange interaction, is proposed for the manipulation of magnetization. Magnetization switching in ferromagnetic thin films with perpendicular magnetocrystalline anisotropy can be achieved by current induced spin-orbit field, with small in-plane applied magnetic field. Spin-orbit field induced by current pulses as short as 10 ps can initiate ultrafast magnetizatio…
A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scalable synthesis of the TI/superconductor heterostructures. Although the growth of epitaxial TI films on s-wave superconductors has been achieved, it remains an outstanding challenge for synthesizing atomically thin TI/superconductor heterostructures, which are critical for engineering the TSC phase. Here, we used MBE to grow Bi2Se3 films with the co…
Pt(xÅ)/Co(5Å)/Pt(10Å) trilayer films were deposited on naturally oxidized Si(111) substrate to investigate Ti underlayer effect on PMA. A small amount of Ti underlayer promoted the magnetic anisotropy to a perpendicular direction for x=8Å and 10Å. Both GI XRD and STM results showed that the Ti underlayer manipulated the growth of trilayer film. The Pt particles preferably grow the neighborhood of the Ti cluster, giving rise to a relatively smooth layer with a fiber texture fcc (111) structure. By contrast, the absence of Ti underlayer leads to clustered, relatively rough, and randomly oriented…
Spin orbit coupling plays a non-perturbation effect in many recently developed novel fields including topological insulators and spin-orbit assistant Mott insulators. In this paper, strongly temperature-dependent spin orbit coupling, revealed by weak anti-localization, is observed at low temperature in 5d strongly correlated compound, SrIrO3. As the temperature rising, increase rate of Rashba coefficient is nearly 30%-45%/K. The increase is nearly 100 times over that observed in semiconductor heterostructures. Microscopically, the large increase of Rashba coefficient is attributed to the signi…
We propose a possible way to realize topological superconductivity with application of laser light to superconducting cuprate thin films. Applying Floquet theory to a model of $d$-wave superconductors with Rashba spin-orbit coupling, we derive an effective model and discuss its topological nature. Interplay of the Rashba spin-orbit coupling and the laser light effect induces the synthetic magnetic fields, thus making the system gapped. Then the system acquires the topologically non-trivial nature which is characterized by Chern numbers. The effective magnetic fields do not create the vortices …
A general expression for the spin Hall conductivity (SHC) in the s-wave superconducting state at finite temperatures is derived. Based on the expression, we study the SHC in a two-dimensional electron gas model in the presence of Rashba spin-orbit interaction (SOI). The SHC is zero in the normal state, whereas it takes a large negative value as soon as the superconductivity occurs, due to the change in the quasiparticle contributions. Since this remarkable behavior is independent of the strength of the SOI, it will be widely observed in thin films of superconductors with surface-induced Rashba…
The ability of spin-orbit interactions to convert charge current into spin current, most often in the bulk of heavy metal thin films, has been the hallmark of spintronics in the last decade. In this study, we demonstrate how the insertion of light metal element interface profoundly affects both the nature of spin-orbit torque and its efficiency in terms of damping-like ($H_{\text{DL}}$) and field-like ($H_{\text{FL}}$) effective fields in ultrathin Co ferromagnet. Indeed, we measure unexpectedly large $H_{\text{FL}}$/$H_{\text{DL}}$ ratio ($\sim$2.5) upon inserting a 1.4 nm thin Al layer in Pt…
Recent experimental work on Au thin films demonstrated signs of charge current-induced spin polarization through open circuit voltage measurements. In this study, we are investigating the underlying mechanism(s) that induces this measured signal in the Au devices. We determine the theoretically expected spin polarization from both Rashba-Edelstein effect and bulk spin Hall effect. The discrepancy in the scaling of the measured signal as a function of the thickness of the Au thin film in the two cases is our key to differentiate between the two effects when compared to experimental data. Experi…
A theoretical study is presented of the effect of an in-plane magnetic exchange field on the band structure of centrosymmetric films of noble metals and topological insulators. Based on an ab initio relativistic $\mathbf{k}\cdot\mathbf{p}$ theory, a minimal effective model is developed that describes two coupled copies of a Rashba or Dirac electronic system residing at the opposite surfaces of the film. The coupling leads to a structural gap at $\barΓ$ and causes an exotic redistribution of the spin density in the film when the exchange field is introduced. We apply the model to a nineteen-lay…
In antiferromagnetic (AFM) thin films, broken inversion symmetry or coupling to adjacent heavy metals can induce Dzyaloshinskii-Moriya (DM) interactions. Knowledge of the DM parameters is essential for understanding and designing exotic spin structures, such as hedgehog Skyrmions and chiral Néel walls, which are attractive for use in novel information storage technologies. We introduce a framework for computing the DM interaction in two-dimensional Rashba antiferromagnets. Unlike in Rashba ferromagnets, the DM interaction is not suppressed even at low temperatures. The material parameters cont…
We report the direct observation of interband spin-orbit (SO) coupling in a two-dimensional (2D) surface electron system, in addition to the anticipated Rashba spin splitting. Using angle-resolved photoemission experiments and first-principles calculations on Bi/Ag/Au heterostructures we show that the effect strongly modifies the dispersion as well as the orbital and spin character of the 2D electronic states, thus giving rise to considerable deviations from the Rashba model. The strength of the interband SO coupling is tuned by the thickness of the thin film structures.
A major impediment towards realizing technologies based on the emerging principles of antiferromagnetic spintronics is the shortage of suitable materials. In this paper, we propose a design of polar|nonpolar heterostructures of perovskite oxides, where a single unit cell of SrIrO3 is sandwiched between a thin film of LaAlO3 and a substrate of SrTiO3. Our calculations within the framework of density-functional theory + Hubbard U + spin-orbit coupling reveal a two-dimensional conducting layer with electron and hole pockets at the interface, exhibiting a strong anisotropic Rashba-Dresselhaus effe…
The dynamical and static Rashba effects in hybrid methylammonium (MA) lead halide perovskites have recently been theoretically predicted. However, only the static effect was experimentally confirmed so far. Here we report on the dynamical Rashba effect observed using snapshot transient absorption spectral imaging with 400 nm pumping for a fully encapsulated film of 20-nm-sized 3D MAPbBr3 nanocrystals. The effect causes a 240 meV splitting of the lowest-energy absorption bleaching band, initially appearing over sub-ps timescale and progressively stabilizing to 60 meV during 500 ps. The integrat…
Here, we report on angle-resolved photoemission studies of the electronic $π$ states of high-quality epitaxial graphene layer on a Ni(111) surface. In this system electron binding energy of the $π$ states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinary large energy shift up to 225 meV of the graphene-derived $π$-band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction of spin-polarized electrons in the $π$ band with the large effective electric field at graphene/Ni interface. Our findi…
A study of wetting was carried out on porous silicon films with pore diameters spanning three orders of magnitude. Water contact angle measurements on adjoining porous and nonporous regions yielded Wenzel roughness ratios that were either unphysical (less than unity) or unrealistically low when compared to those expected from specific surface area considerations. Moreover, results obtained from a sample consisting of a microporous film on a macroporous layer gave contact angles that were very similar to those found on films consisting of only a single microporous layer, contrary to what would …
We study the spin transport theoretically in heterostructures consisting of a ferromagnetic metallic thin film sandwiched between heavy-metal and oxide layers. The spin current in the heavy metal layer is generated via the spin Hall effect, while the oxide layer induces at the interface with the ferromagnetic layer a spin-orbital coupling of the Rashba type. Impact of the spin Hall effect and Rashba spin-orbit coupling on the spin Seebeck current is explored with a particular emphasis on nonlinear effects. Technically, we employ the Fokker-Planck approach and contrast the analytical expression…
The surface spin states for bismuth thin films were investigated using an $sp^3$ tight-binding model. The model explains the experimental observations using angle-resolved photoemission spectroscopy, including the Fermi surface, the band structure with Rashba spin splitting, and the quantum confinement in the energy band gap of the surface states. A large out-of-plane spin component also appears. The surface states penetrate inside the film to within approximately a few bilayers near the Brillouin-zone center, whereas they reach the center of the film near the Brillouin-zone boundary.
Considering metallic films at room temperature, we present the first theoretical study of the spin Nernst and thermal Edelstein effects which takes into account dynamical spin-orbit coupling, i.e., direct spin-orbit coupling with the vibrating lattice (phonons) and impurities. This gives rise to two novel processes, namely a dynamical Elliott-Yafet spin relaxation and a dynamical side-jump mechanism. Both are the high-temperature counterparts of the well-known $T = 0$ Elliott-Yafet and side-jump, central to the current understanding of the spin Hall, spin Nernst and Edelstein effects at low $T…
Despite its extremely weak intrinsic spin-orbit coupling (SOC), graphene has been shown to acquire considerable SOC by proximity coupling with exfoliated transition metal dichalcogenides (TMDs). Here we demonstrate strong induced Rashba SOC in graphene that is proximity coupled to a monolayer TMD film, MoS2 or WSe2, grown by chemical vapor deposition with drastically different Fermi level positions. Graphene/TMD heterostructures are fabricated with a pickup-transfer technique utilizing hexagonal boron nitride, which serves as a flat template to promote intimate contact and therefore a strong i…
A magnetoresistance effect induced by the Rashba spin-orbit interaction was predicted, but not yet observed, in bilayers consisting of normal metal and ferromagnetic insulator. Here, we present an experimental observation of this new type of spin-orbit magnetoresistance (SOMR) effect in a bilayer structure Cu[Pt]/Y3Fe5O12 (YIG), where the Cu/YIG interface is decorated with nanosize Pt islands. This new MR is apparently not caused by the bulk spin-orbit interaction because of the negligible spin-orbit interaction in Cu and the discontinuity of the Pt islands. This SOMR disappears when the Pt is…
Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajectories. The Rashba parameter $α_{\text{R}}\,=\,(4.5 \pm 1)$ meV$Å$ is determined, and it is shown that in the previous studies of electrons adjacent to GaN/(Al,Ga)N interfaces, bulk inversion asymmetr…
Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and Pt plays the dominant role in the modulation. This finding can facilitate investigations of gate-tunable, spin-related effects and fabrication of spin devices.
