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arXiv 1709.09205cond-mat.mes-hallcond-mat.mtrl-sci
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Rashba反铁磁体中界面Dzyaloshinskiii-Moriya相互作用理论

Theory of the Interfacial Dzyaloshinskii-Moriya Interaction in Rashba Antiferromagnets

Alireza Qaiumzadeh, Ivan A. Ado, Rembert A. Duine, Mikhail Titov, Arne Brataas

摘要:

在反铁磁(AFM)薄膜中,反转对称性破缺或与相邻重金属的耦合可以诱导Dzyaloshinskiii-Moriya(DM)相互作用。DM参数的知识是必不可少的理解和设计奇异的自旋结构,如刺猬Skyrmions和手征Néel壁,这是有吸引力的用于新的信息存储技术。我们介绍了一个框架计算DM相互作用的二维Rashba反铁磁体。与Rashba铁磁体不同,DM相互作用即使在低温下也不会被抑制。材料参数控制界面DM相互作用的强度和符号。我们的研究结果提出了一种通过掺杂和电场来控制AFM材料中DM相互作用的方法。

英文摘要:

In antiferromagnetic (AFM) thin films, broken inversion symmetry or coupling to adjacent heavy metals can induce Dzyaloshinskii-Moriya (DM) interactions. Knowledge of the DM parameters is essential for understanding and designing exotic spin structures, such as hedgehog Skyrmions and chiral Néel walls, which are attractive for use in novel information storage technologies. We introduce a framework for computing the DM interaction in two-dimensional Rashba antiferromagnets. Unlike in Rashba ferromagnets, the DM interaction is not suppressed even at low temperatures. The material parameters control both the strength and the sign of the interfacial DM interaction. Our results suggest a route toward controlling the DM interaction in AFM materials by means of doping and electric fields.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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