用于库仑阻塞器件的超高欧姆微带线电阻器
Ultra-high-ohmic microstripline resistors for Coulomb blockade devices
摘要：
在本文中，我们报告的极高欧姆微带电阻的制造和低温特性的薄膜的弱氧化钛。在低至$T \sim \unit[20]{mK}$的温度下，对于具有高达$\sim \unit[7]{kΩ}$的薄层电阻率的膜，即，比我们先前对于弱氧化的Cr的发现高约一个数量级，测量了几乎线性的电压-电流特性。我们的分析表明，这样的改进可以帮助创建一个有利的高阻抗环境，不同的库仑阻塞设备。在这项工作中解决的Ti膜的进一步的属性显示了低噪声行为的电阻器时，应用在不同的实现的量子标准的电流的承诺。
英文摘要：
In this paper, we report on the fabrication and the low-temperature characterization of extremely high-ohmic microstrip resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage-current characteristics were measured at temperatures down to $T \sim \unit[20]{mK}$ for films with sheet resistivity up to as high as $\sim \unit[7]{kΩ}$, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show a promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current.
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