arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2001.04234cond-mat.mtrl-scicond-mat.mes-hall
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应变KTaO3超薄膜中的巨Rashba自旋劈裂及其环光电流效应

Giant Rashba spin splitting in strained KTaO3 ultrathin films for circular photogalvanic currents

Ning Wu, Xue-Jing Zhang, Bang-Gui Liu

AI总结:

本文通过第一性原理计算发现,对KTaO3超薄膜施加双轴压应变(接近-5%)可实现高达140 meV的巨Rashba自旋劈裂,并在覆盖层或衬底存在时保持,可用于产生自旋极化环光电流,推动自旋电子学与光电子学应用。

摘要:

表面和界面处的强Rashba效应在基础科学探索和实际应用中引起了极大关注。本文的第一性原理研究表明,通过对KTaO$_3$(KTO)超薄膜施加双轴应力,可以实现巨大且可调的Rashba效应。当面内压缩应变接近-5%时,Rashba自旋劈裂能达到$E_{R}=140$ meV,约对应Rashba耦合常数$α_{R}=1.3$ eV Å。我们研究了其随应变变化的晶体结构、能带及相关性质,从而阐明了巨Rashba效应的机理。此外,我们展示了在SrTiO$_3$覆盖层和/或Si衬底存在的情况下,巨Rashba自旋劈裂可以保持,并且可以实现强环光电流效应以在KTO薄膜或相关异质结构中产生自旋极化电流,这对于未来的自旋电子学和光电子学应用具有前景。

英文摘要:

Strong Rashba effects at surfaces and interfaces have attracted great attention for basic scientific exploration and practical applications. Here, the first-principles investigation shows that giant and tunable Rashba effects can be achieved in KTaO$_3$ (KTO) ultrathin films by applying biaxial stress. When increasing the in-plane compressive strain nearly to -5\%, the Rashba spin splitting energy reaches $E_{R}=140$ meV, approximately corresponding to the Rashba coupling constant $α_{R}=1.3$ eV Å. We investigate its strain-dependent crystal structures, energy bands, and related properties, and thereby elucidate the mechanism for the giant Rashba effects. Furthermore, we show that giant Rashba spin splitting can be kept in the presence of SrTiO$_3$ capping layer and/or Si substrate, and strong circular photogalvanic effect can be achieved to generate spin-polarized currents in the KTO thin films or related heterostructures, which are promising for future spintronic and optoelectronic applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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