利用AlN/GaN/AlN量子阱和15 N同位素对应变GaN-channels/AlN的双光标记拉曼表征
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
摘要：
这项工作表明，嵌入在AlN基质中的高应变GAN量子阱与受控的氮同位素浓度的组合能够实现拉曼光谱的双标记方法。通过结合这些技术，我们证明了在研究垂直方向上的应变的有效性。这种技术将能够精确探测异质结构中掩埋有源层的特性，并且可以在未来扩展到垂直器件，例如用于光发射器和电力电子器件的垂直器件。
英文摘要：
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
