铅硫族化物薄膜的Rashba驱动的反常能斯特电导
Rashba-driven anomalous Nernst conductivity of lead chalcogenide films
摘要：
有限Berry曲率$\left(Ω\left(k\right)\right)$的存在导致反常的热效应。本文计算了铅硫族化物（\textit{PbX} ; \textit{X} = S，Se，Te）薄膜中反常能斯特效应$\left(ANE\right) $及其自旋类似物自旋能斯特效应$\left(SNE\right)$的系数。具有大自旋-轨道耦合的窄间隙\textit{PbX}膜（\textit{soc}）提供了显著的Rashba相互作用，其引起$ Ω\left(k\right) $和伴随的异常热行为。在存在温度梯度的情况下，$ ANE $和$ SNE $建立热电流和自旋电流，并且其特征在于它们各自的系数，对于较强的Rashba相互作用获得较高的值。我们进一步表明，由面内电场产生的非本征\textit{soc}提供了一个类似门的机制来控制（和关闭）的异常热电流。最后，我们得出结论，通过推导的$ ANE $驱动的低温卡诺热机的效率，并证明它可以在系统中得到有益的优化与一个强大的固有\textit{soc}导致低载流子有效质量。
英文摘要：
The presence of a finite Berry curvature $\left(Ω\left(k\right)\right)$ leads to anomalous thermal effects. In this letter, we compute the coefficients for the anomalous Nernst effect $\left(ANE\right) $ and its spin analogue, the spin Nernst effect $\left(SNE\right)$ in lead chalcogenide (\textit{PbX}; \textit{X} = S, Se, Te) films. The narrow gapped \textit{PbX} films with a large spin-orbit coupling (\textit{soc}) offer a significant Rashba interaction that gives rise to $ Ω\left(k\right) $ and the attendant anomalous thermal behaviour. In presence of a temperature gradient, the $ ANE $ and $ SNE $ establish a thermal and spin current and are characterized by their respective coefficients which acquire higher values for a stronger Rashba interaction. We further show that an extrinsic \textit{soc} generated by an in-plane electric field offers a gate-like mechanism to control (and turn-off) the anomalous thermal currents. Finally, we conclude by deriving the efficiency of an $ ANE $-driven low-temperature Carnot heat engine and demonstrate that it can be gainfully optimized in systems with a robust intrinsic \textit{soc} resulting in low carrier effective masses.
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