Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating

Tunable inverse spin Hall effect in nanometer-thick platinum films by ionic gating

Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet transition in (In,Mn)As and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such degree of control even in metall…

Multipurpose and Reusable Ultrathin Electronic Tattoos Based on PtSe2 and PtTe2

Wearable bioelectronics with emphasis on the research and development of advanced person-oriented biomedical devices have attracted immense interest in the last decade. Scientists and clinicians find it essential to utilize skin-worn smart tattoos for on-demand and ambulatory monitoring of an individual's vital signs. Here we report on the development of novel ultrathin platinum-based two-dimensional dichalcogenide (Pt-TMDs) based electronic tattoos as advanced building blocks of future wearable bioelectronics. We made these ultrathin electronic tattoos out of large-scale synthesized platinum …

Suppression of the fieldlike spin-orbit torque efficiency due to the magnetic proximity effect in ferromagnet/platinum bilayers

Current-induced spin-orbit torques in Co$_2$FeAl/Pt ultrathin bilayers are studied using a magnetoresistive harmonic response technique, which distinguishes the dampinglike and fieldlike contributions. The presence of a temperature-dependent magnetic proximity effect is observed through the anomalous Hall and anisotropic magnetoresistances, which are enhanced at low temperatures for thin platinum thicknesses. The fieldlike torque efficiency decreases steadily as the temperature is lowered for all Pt thicknesses studied, which we propose is related to the influence of the magnetic proximity eff…

Influence of low-energy magnons on magnon Hanle experiments in easy-plane antiferromagnets

Antiferromagnetic materials host pairs of spin-up and spin-down magnons which can be described in terms of a magnonic pseudospin. The close analogy between this magnonic pseudospin systems and that of electronic charge carriers led to the prediction of fascinating phenomena in antiferromagnets. Recently, the associated dynamics of antiferromagnetic pseudospin has been experimentally demonstrated and, in particular, the first observation of the magnon Hanle effect has been reported. We here expand the magnonic spin transport description by explicitly taking into account contributions of finite-…

非互易磁振子汉勒效应的观测

Observation of nonreciprocal magnon Hanle effect

本文在赤铁矿中观测到磁振子汉勒信号的非互易性，发现交换铂电极的注入/探测角色会改变自旋信号，并用自旋输运方向依赖的赝场解释该现象，表明其可通过外加磁场调控。

Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observed the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si, and estimated the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal was observed without Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of …