In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating the increase in formation of at least one non-radiative defect type. Simultaneously, the PL yield ratios of blue/UV and green/UV increase, suggesting that defects associated with these emissions increase in concentration with O2 annealing. Utilizing the different absorption coefficients of 240 and 266 nm polarization-dependent excitation, we find an overall activation energy for the generation of non-radiative defects of 0.69 eV in the bulk but 1.55 eV near the surface. We also deduce activation energies for the green emission-related defects of 0.60 eV near the surface and 0.89-0.92 eV through the films, whereas the blue-related defects have activation energy in the range 0.43-0.62 eV for all depths. Lastly, we observe hillock surface morphologies and Cr diffusion from the substrate into the film for temperatures above 1050 oC. These observations are consistent with the formation and diffusion of VGa and its complexes as a dominant process during O2 annealing, but further work will be necessary to determine which defects and complexes provide radiative and non-radiative recombination channels and the detailed kinetic processes occurring at surfaces and in bulk amongst defect populations.
Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The study reveals that the rate of spin-flip scattering for all the three excitonic features becomes almost $B$-independent suggesting that these signals must be stemming from defects which are ferromagneti…
Wide bandgap (~3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (~320 cm2 V-1 s-1) with a high carrier concentration (~10^20 cm-3). For this reason, many researchers have fabricated LBSO epitaxial films thus far, but the obtainable carrier mobility is substantially low compared to that of single crystals due to the formation of the lattice/structural defects. Here we report that the mobility suppression in LBSO films can be lifted by a simple vacuum annealing process. The…
Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing
采用快速热退火诱导锗化方法，在绝缘体上硅（SOI）衬底上外延生长Fe/Co/赝Ge（001）-on-insulator（GOI）多层膜，制备了全Heusler Co2 FeGe（CFG）合金薄膜。X射线衍射（XRD）分析结果表明，薄膜沿[001]方向外延生长，且具有面内外延结构，薄膜的面内外延关系为[100]|| GOI[100]，虽然电影稍微包含纹理成分。强的（111）和（200）超晶格衍射强度表明，CFG薄膜具有高度有序的L21结构。薄膜的横截面高分辨率透射电子显微镜图像表明薄膜具有主要的外延和轻微的织构组分，这与XRD测量结果一致。外延元件直接生长在SOI衬底的BOX层上，而不形成任何界面层。
Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) sur…
We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account quantitatively for the time-resolved photoluminescence and photoluminescence excitation spectra by only considering standard textbook density of states, and state filling effects. Such an approach is dif…
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities …
We report on Raman and photoluminescence spectroscopic studies on oxygen vacancy induced structural disorder in Gd2Ti2O7-d single crystals grown by optical floating zone technique under argon atmosphere. The oxygen vacancies in Gd2Ti2O7-d wafers decrease with thermal annealing in an air atmosphere. The full width at half maximum of X-ray diffraction rocking curve decreases from 245 to 157 arc-second and the optical transmittance increases from 23 to 87 % (at 1000 nm) upon post growth thermal annealing. Raman spectroscopic studies reveal a monotonic increase in intensity of O-Gd-O (Eg) and Ti-O…
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS$_2$ and a different thermal expansion of graphene and Mo…
The double perovskite La2NiMnO6 (LNMO) exhibits complex magnetism due to the competition of magnetic interactions that are strongly affected by structural and magnetic inhomogeneities. In this work, we study the effect of oxygen annealing on the structure and magnetism of epitaxial thin films grown by pulsed laser deposition. The key observations are that a longer annealing time leads to a reduction of saturation magnetization and an enhancement in the ferromagnetic transition temperature. We explain these results based upon epitaxial strain and oxygen defect engineering. The oxygen enrichment…
We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin films are achievable despite threading dislocation densities exceeding $10^9$ $cm^{-2}$ arising from island growth on the nearly 8% lattice- and crystal-structure-mismatched GaAs substrate. Using quasi-co…
Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on SrTiO3(001) substrates under various post-growth annealing conditions. Low-temperature annealing with an excess supply of Se leads to formation of Fe vacancies and superstructures, accompanied by a superconductivity (metal)-to-insulator transition in FeSe films. By contrast, high-temperature annealing could eliminate the Fe vacancies and superstructures, and thus recover the high-temperature superconducting phase of monolayer FeSe films. We also observe multilayer Fe…
Stoichiometric Epitaxial Strontium Titanate Thin Films on Silicon by High-Temperature Sr Segregation
Imec；Department of Materials Engineering (MTM), KU Leuven（荷语鲁汶大学材料工程系）；Physics Department, Jean Monnet University（圣艾蒂安让·穆内大学物理系）；Department of Information Technology (INTEC), Photonics Research Group, Ghent University（根特大学信息与科技学院光子学研究组）
Thin film synthesis of SrZn2P2 with SrI2 post-annealing for enhanced crystallinity and optoelectronic quality
Materials Sciences Center, National Laboratory of the Rockies（国家落基山实验室材料科学中心）；Thayer School of Engineering, Dartmouth College（达特茅斯学院塔克工程学院）；Department of Materials Science and Nano Engineering, Rice University（莱斯大学材料科学与纳米工程系）；Rice Advanced Materials Institute, Rice University（莱斯大学先进材料研究所）；Department of Physics and Astronomy, Dartmouth College（达特茅斯学院物理与天文系）；Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales（新南威尔士大学光伏与可再生能源工程学院澳大利亚先进光伏中心）；Department of Chemical and Nano Engineering, University of California San Diego（加州大学圣地亚哥分校化学与纳米工程系）
Study of the optimal conditions for NV- center formation in type 1b diamond, using photoluminescence and positron annihilation spectroscopies
研究了质子辐照结合真空热退火在~1b型金刚石单晶中产生负电荷氮空位色心（NV-）的最佳工艺参数。几个样品在不同的辐照和退火条件下处理，其特征在于慢正电子束多普勒展宽和光致发光（PL）光谱。在高质子注量的另一个复杂的空位缺陷出现限制NV-的形成。根据PL测量，NV-的浓度估计高达2.3 x 10^18 cm^-3。此外，我们还用NV ~-理论推导了正电子的俘获系数。这项研究深入了解了金刚石中高浓度NV-的生产，这在超灵敏磁力测量和量子混合系统应用中至关重要。
We present a detailed real-space spin-polarized scanning tunneling microscopy (SP-STM) study of the magnetic domain structure of Gd(0001) films epitaxially grown on W(110). To find optimal preparation conditions, the influence of the substrate temperature during deposition and of the post-growth annealing temperature was investigated. Our results show that the lowest density of surface defects, such as step edges as well as screw and edge dislocations, is obtained for room temperature deposition and subsequent annealing at 900\,K. SP-STM data reveal small-sized magnetic domains at lower anneal…
Hybrid Epitaxial Al/InGaAs system: Solid-state dewetting and Al facet formation
University of Waterloo（滑铁卢大学）；Waterloo Institute for Nanotechnology, University of Waterloo（滑铁卢大学纳米技术研究所）；Quantum Nanofabrication and Characterization Facility (QNFCF), University of Waterloo（滑铁卢大学量子纳米加工与表征设施）；Canadian Light Source Inc.（加拿大光源公司）；Institute for Quantum Computing, University of Waterloo（滑铁卢大学量子计算研究所）
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first principle calculations we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution towards the integration of graphene with conven…
Among the class of strongly-correlated oxides, La1-xSrxMnO3 $-$ a half metallic ferromagnet with a Curie temperature above room temperature $-$ has sparked a huge interest as a functional building block for memory storage and spintronic applications. In this respect, defect engineering has been in the focus of a long-standing quest for fabricating LSMO thin films with highest quality in terms of both structural and magnetic properties. Here, we discuss the correlation between structural defects, such as oxygen vacancies and impurity islands, and magnetism in La0.74Sr0.26MnO3/SrTiO3 (LSMO/STO) …
Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though awa…
