离子注入和闪光灯退火处理的GaAs 1.3 μ m发光的起源和增强
Origin and enhancement of the 1.3 um luminescence from GaAs treated by ion-implantation and flash lamp annealing
摘要：
GaAs和GaAs基材料具有优异的光电性能，被广泛用作器件中的发光介质。已经有许多方法应用于GaAs以在0.88、1.30、1.55 μ m（光纤的传输窗口）处产生发光。本文报道了经离子注入和闪光灯退火（FLA）处理的GaAs深能级缺陷在1.30 μ m处的光致发光。这样的发射，表现出优越的温度稳定性，可以从FLA处理的原生GaAs以及掺杂GaAs获得。在GaAs中掺铟可以大大增强发光。通过光致发光谱、拉曼光谱和正电子湮没谱的测量，我们得出结论：1.30 μ m的发射是由VAs施主和X受主对之间的跃迁引起的。
英文摘要：
GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are transmission windows of optical fibers. In this paper we present the photoluminescence at 1.30 um from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 um emission is from transitions between the VAs-donor and X-acceptor pairs.
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