通过Sn离子注入和闪光灯退火形成Si1-x-yGeySnx合金
Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
AI总结：
本文提出Sn离子注入结合毫秒级FLA制备Si1-x-yGeySnx合金，并在SOI超薄SiGe层中实现无偏析、含Sn高达2.3 at.%的单晶及局部改性。
摘要：
多年来，Si1-yGey合金因其调节硅基纳米电子器件性能的能力而被应用于半导体工业。沿着IV族半导体的这种合金化思路，向合金中添加锡（Sn）似乎是显而易见的下一步，这为定制材料性质带来了更多可能性。添加Sn能够实现有效的带隙和应变工程，并可提高载流子迁移率，这使Si1-x-yGeySnx合金成为未来光电和纳米电子应用的有前景候选材料。用于外延生长Si1-x-yGeySnx的自下而上方法，例如化学气相沉积和分子束外延，仅允许沿生长方向调节材料性质；用这种自下而上方法实现局部材料改性以产生横向异质结构极其复杂，因为这将需要使用光刻、刻蚀，以及选择性外延或外延加化学机械抛光，从而引起界面问题、非平面衬底等。本文展示了通过向Si1-yGey层中进行Sn离子束注入，随后进行毫秒级闪光灯退火（FLA）来制备Si1-x-yGeySnx合金的可能性。采用卢瑟福背散射谱、显微拉曼光谱、X射线衍射和透射电子显微镜对材料进行研究。该制备方法被适配用于绝缘体上硅衬底上的超薄Si1-yGey层。结果表明，通过FLA再结晶后，制备出了含有高达2.3 at.%并入Sn且没有任何Sn偏析迹象的单晶Si1-x-yGeySnx。最后，我们展示了通过掩蔽芯片上的非结构化区域，在超薄Si1-yGey薄膜中局部注入Sn的可能性。
英文摘要：
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
