arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1202.0572cond-mat.mtrl-sciphysics.optics
收藏

Er2O3-Sol-Gel SiO2薄膜中铒发射热退火行为的解析研究

Analytical Study of Thermal Annealing Behaviour of Erbium Emission in Er2O3-Sol-Gel Silica Films

Sufian Abedrabbo, Bashar Lahlouh, Anthony Fiory

摘要:

室温1535 nm波段光致发光在~126 nm二氧化硅薄膜(6 at. %掺杂)作为真空炉退火(500至1050 ℃)的函数进行研究。发射强烈增强退火接近850摄氏度,这是通过模拟的温度依赖性所示的热激活去除氢氧根离子。这种工艺对硅基应用的适用性进行了讨论。

英文摘要:

Room-temperature 1535-nm-band photoluminescence in ~126 nm silica films (6 at. % doping), produced by spin-coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500 to 1050 degrees C). Emission is strongly enhanced for annealing near 850 degrees C, which is shown by modeling the temperature dependence as arising from thermally-activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑