Energy spectra of backscattered and transmitted ions with primary energies of 50 keV and 100 keV interacting with self-supporting foils were recorded with a Time-of-Flight Medium-Energy Ion Scattering setup in a single experiment. Self-supporting Au and W foils without backing material were used. For He ions transmitted through Au the spectrum of detected particles shows two distinct components corresponding to different energy losses in the film, whereas for protons no such phenomenon was observed. To determine the origin of these different contributions, measurements for different angles of incidence and scattering angles have been evaluated. The results suggest that the two components in the spectrum of transmitted He ions could be attributed to impact parameter dependent energy loss, being more prominent for He ions than for protons. The main origin of the necessary impact parameter selection along the different ion trajectories is expected to be texture in the Au-foils.
Experimental spectra from medium energy ion scattering were compared to Monte-Carlo simulations (employing the TRBS code) to obtain information on the scattering potential. The impact of uncertainties in the interatomic potential on quantification of sample properties such as thickness, composition or electronic stopping was investigated for different scattering geometries: backscattering and transmission. For backscattered He ions with tens of keV primary energy the scattering potential was found to overestimate the multiple scattering background in the energy spectra resulting in an uncertai…
We investigated the specific electronic energy deposition by protons and He ions with keV energies in different transition metal nitrides of technological interest. Data were obtained from two different time-of-flight ion scattering setups and show excellent agreement. For protons interacting with light nitrides, i.e. TiN, VN and CrN, very similar stopping cross sections per atom were found, which coincide with literature data of N2 gas for primary energies <= 25 keV. In case of the chemically rather similar nitrides with metal constituents from the 5th and 6th period, i.e. ZrN and HfN, the el…
Self-sputtering of copper under high electric fields is considered to contribute to plasma buildup during a vacuum breakdown event frequently observed near metal surfaces, even in ultra high vacuum condition in different electric devices. In this study, by means of molecular dynamics simulations, we analyze the effect of surface temperature and morphology on the yield of self-sputtering of copper with ion energies of 0.1-5 keV. We analyze all three low-index surfaces of Cu, {100}, {110} and {111}, held at different temperatures, 300 K, 500 K and 1200 K. The surface roughness relief is studied …
Mechanism of Oxygen Reduction via Chemical Affinity in NiO/SiO2 Interfaces Irradiated with keV Energy Hydrogen and Helium Ions for Heterostructure Fabrication
In nano-capillaries of large aspect ratio, the attractive image charge force is strong enough to affect the trajectory of ions passing through capillaries and consequently to diminish the fraction of transmitted beam ions. We calculated the theoretically transmitted fraction, using an approached but CPU-friendly expression of the image charge force valid in the case of a static ion and an infinite cylindrical dielectric interface. When comparing the theoretically transmitted fraction to available experimental data for nano-capillaries with an inner diameter of less than 200 nm, we found a surp…
We have measured the electronic energy-loss straggling of protons, helium, boron and silicon ions in silicon using a transmission time-of-flight approach. Ions with velocities between 0.25 and 1.6 times the Bohr velocity were transmitted through single-crystalline Si(100) nanomembranes in either channelling or random geometry to study the impact parameter dependence of energy-loss straggling. Nuclear and path length contributions to the straggling were determined with the help of Monte Carlo simulations. Our results exhibit an increase in straggling with increasing ion velocity for channelled …
We have simultaneously measured angular distributions and electronic energy loss of helium ions and protons directly transmitted through self-supporting, single-crystalline silicon foils. We have compared the energy loss along channelled and random trajectories for incident ion energies between 50 keV and 200 keV. For all studied cases the energy loss in channelling geometry is found lower than in random geometry. In the case of protons, this difference increases with initial ion energy. This behaviour can be explained by the increasing contribution of excitations of core electrons, which are …
Track radii Re induced by swift heavy ions are studied. The experimental track data are analyzed in Gd2Ti2O7 pyrochlore in the range Se=6-54 keV/nm (Se - electronic stopping power) including irradiations by low and high velocity ions. The Analytical Thermal Spike Model (ATSM) is applied whose main features are reviewed. The track data of Gd2Ti2O7 exhibit scaling features which mean simple quantitative relationships with track sizes of other insulators controlled only by a single materials parameter (MP), the melting temperature Tm. The Re2-Se track evolution curve is described in the whole ran…
We present experiments demonstrating trajectory-dependent electronic excitations at low ion velocities, where ions are expected to primarily interact with delocalized valence electrons. The energy loss of H$^+$, H$_2 ^+$, He$^+$, B$^+$, N$^+$, Ne$^+$, $^{28/29}$Si$^+$ and Ar$^+$ in self-supporting silicon membranes was analysed along channelled and random trajectories in a transmission approach. For all ions, we observe a difference in electronic stopping dependent on crystal orientation. For heavier ions, the energy-loss difference between channelling and random geometry is generally found mo…
The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardment with noble gas ions. The energy distributions in dependence on ion beam parameters (ion energy: 0.5 - 1 keV; ion species: Ne, Ar, Xe) and geometrical parameters (ion incidence angle, polar emission angle, scattering angle) are measured by means of energy-selective mass spectrometry. The presence of anisotropic effects due to direct sputtering and scattering is discussed and correlated with process parameters. The experimental results are compared to calculations based on a simple elastic bin…
Electronic stopping power in the \(\mathrm{keV/Å}\) range is accurately calculated from first principles. The energy loss to electrons in self-irradiated nickel, a paradigmatic transition metal, using real-time time-dependent density functional theory is studied. Different core states are explicitly included in the simulations to understand their involvement in the dissipation mechanism. The experimental data are well reproduced in the projectile velocity range of \(1.0 - 12.0~\mathrm{atomic~units}\). The core electrons of the projectile are found to open additional dissipation channels as the…
The broadening and optical parameters of TiO2/SiO2 transition layers depending on the ion energy have been investigated using the Rutherford Backscattering Spectrometry (RBS) and Ellipstrometry Spectroscopy (ES) methods. The TiO2/SiO2 samples were irradiated by Xe+ ions with energies of 100, 150, 200 and 250 keV. The depth profiles of the elements determined by the RBS spectra show the structure and thickness of the TiO2/SiO2 transition layers before and after implantation. We have found that the thickness of the transition region between the TiO2 and SiO2 layers increases with the increasing …
Towards quantitative Low Energy Ion Scattering on CaSiO$_3$ from Comparison to Multiple-Scattering-Resolved Dynamical Binary Collision Approximation Simulations
TU Wien, Institute of Applied Physics（维也纳工业大学应用物理研究所）；Center for Electrochemical Surface Technology（电化学表面技术中心）；University of California, Space Sciences Laboratory（加州大学空间科学实验室）；TU Wien, Institute of Chemical Technologies and Analytics（维也纳工业大学化学技术与分析研究所）；Max Planck Institute for Plasma Physics（马普等离子体物理研究所）；Universität Göttingen, II. Physikalisches Institut（哥廷根大学第二物理研究所）
