AI 中文总结
本研究通过离子-光子符合测量，探究keV He离子穿过固体时电子激发的电荷态依赖性，发现其电子激发与材料无关且随动能上升，扩展了通用激发模型的适用范围。
AI 中文摘要
研究keV量级轻离子在物质中引发的电子激发，有助于更好地理解材料改性（如空间风化或聚变反应堆中的等离子体-壁相互作用），并改进材料分析方法（如低能或中能离子散射）。本研究针对这些分析方法中最常用的keV He projectile（氦 projectile），探究其特定激发与离子动能的依赖关系。我们报告了 projectile 穿过不同样品系统时被激发所发射的能量大于10eV的光子辐射；我们分离了出射电荷态，并对离子-光子对进行符合测量，即可以将光子与发射它的特定离子关联起来。从这些测量中，我们提取了电荷态分辨的光子产额，并深入理解了发生的电子激发过程。我们的结果表明，氦 projectile 的电子激发在很大程度上与材料无关，且随离子动能的增加而显著上升。光子产额与最初为束箔光谱开发的通用激发模型吻合良好，因此我们将该模型的适用性扩展到了更高光子能量和不同样品材料的情况。我们还对所采用的符合方法及原始数据所需的校正进行了详细分析，因为该方法在基础研究和材料分析中具有广泛适用性。
英文摘要
Investigating the electronic excitations caused by light keV ions in matter contributes to a better understanding of materials modification such as space weathering or plasma-wall interactions in fusion reactors as well as improved materials analysis methods such as low or medium energy ion scattering. This study investigates the dependence of specific excitations in keV He projectiles, the most common projectile employed in these analytical methods, on the kinetic energy of the ion. We report on photon emission at energies >10eV emitted by projectiles excited upon transmission through different sample systems. We separate exit charge states and report on measurements of ion-photon pairs in coincidence, i.e. we can link a photon to the specific ion emitting it. From these measurements we extracted charge state resolved photon yields and obtained a deep insight into the electronic excitation occurring. Our results show that the electronic excitation of the helium projectile is largely material independent and rising strongly with the kinetic energy of the projectile. The photon yields are in good agreement with a common excitation model initially developed for beam foil spectroscopy. We hence extend the validity of this model to higher photon energies and different sample materials. We further provide a detailed analysis of the employed coincidence approach and necessary corrections to the raw data, as the methodology has a broad applicability in fundamental research and materials analysis.
