arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1303.0123cond-mat.mtrl-sci
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离子注入金刚石内部应变的直接测量与模拟

Direct measurement and modelling of internal strains in ion-implanted diamond

Federico Bosia, Nicola Argiolas, Marco Bazzan, Barbara A. Fairchild, Andrew D. Greentree, Desmond W. M. Lau, Paolo Olivero, Federico Picollo, Sergey Rubanov, Steven Prawer

摘要:

本文提出了一个描述离子注入金刚石单晶后质量密度和应变随深度变化的唯象模型和有限元模拟。几个实验来验证的方法:首先,注入180 keV的B离子在相对较低的注量的样品,其特征在于使用高分辨率X射线衍射(HR-XRD);其次,注入500 keV的He离子远高于其非晶化阈值的样品的质量密度的变化,其特征在于与电子能量损失谱(EELS)。在高损伤密度下,应变和密度的实验深度分布显示出饱和效应,随着损伤的增加,损伤密度峰值向更大的深度值偏移,相对于TRIM模拟预测的深度值,这在这里提出的模型中得到了很好的解释。然后,该模型进一步验证TEM测量和模拟的厚度值相比,在不同的深度通过注入500千电子伏的He离子通过可变厚度的掩模,以模拟在不同的能量的离子的同时注入形成的掩埋的无定形碳层。

英文摘要:

We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density variation of a sample implanted with 500 keV He ions well above its amorphization threshold is characterized with Electron Energy Loss Spectroscopy (EELS). At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing TEM-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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