应变与暗态对金刚石中硅-空位中心光谱测量的影响
Impact of strain and dark states on spectroscopic measurements of silicon-vacancy centers in diamond
浏览论文内容
中文总结 AI 辅助
本文针对金刚石中SiV⁻中心的光谱测量问题，开发计算模型模拟MDCS实验，揭示应变随机分布及高应变中心与光发射解耦的特性，为其量子传感器应用提供依据。
中文摘要 AI 辅助
金刚石中的负电硅-空位（SiV⁻）中心为多种量子技术的开发提供了极具吸引力的平台，但大量SiV⁻中心的协同行为仍存在诸多疑问。本文开发了一个计算模型，用于模拟近期利用光学多维相干光谱（MDCS）对金刚石中高浓度SiV⁻中心样品开展的实验，该实验揭示光谱特征会随探测方案发生显著变化。模拟结果表明，该系统中应变效应具有高度随机性，特征轴向应变为2.8×10⁻⁴，剪切应变为3.5×10⁻⁵；还显示高度应变（值超过1.5×10⁻⁵）的中心可能会与光发射显著解耦，这些结果对SiV⁻中心作为量子传感器的应用具有重要意义。
英文摘要
Negatively charged silicon-vacancy (SiV$^-$) centers in diamond offer an attractive platform for the development of many forms of quantum technology. However, questions remain in connection to how large ensembles of SiV$^-$ centers behave in concert. Here, we develop a computational model designed to simulate recent experiments where optical multidimensional coherent spectroscopy (MDCS) was used to examine a high-concentration sample of SiV$^-$ centers in diamond, revealing significant variations in spectral signature depending on the detection scheme. Simulation results reveal that strain effects are highly random in this system, with a characteristic axial strain of $2.8 \times 10^{-4}$ and a shear strain of $3.5 \times 10^{-5}$. They suggest in addition that highly strained centers (with values exceeding $1.5 \times 10^{-5}$) may become significantly decoupled from optical emission. The results have implications for the use of SiV$^-$ centers as quantum sensors.
