冷离子引起的热电子
Hot electrons induced by (rather) cold ions
摘要：
利用薄膜金属-绝缘体-金属结研究了多电荷离子撞击多晶金属表面的势能耗散。离子-金属相互作用导致顶层内的激发电子和空穴。这些载流子的相当大的一部分被向内传输，并且可以作为薄膜隧道结中的内部电流来测量。在Ag-AlOX-Al结中，在底部Al层中检测到每个撞击离子通常0.1-1个电子的产率。研究了势能和动能对隧穿产率的单独影响，当动能在1 ~ 12 keV范围内时，Ar射弹离子的电荷状态从2+变为9+.隧穿产额与入射粒子的势能成线性关系。
英文摘要：
Thin film metal-insulator-metal junctions are used in a novel approach to investigate the dissipation of potential energy of multiply charged ions impinging on a polycrystalline metal surface. The ion-metal interaction leads to excited electrons and holes within the top layer. A substantial fraction of these charge carriers is transported inwards and can be measured as an internal current in the thin film tunnel junction. In Ag-AlOX-Al junctions, yields of typically 0.1-1 electrons per impinging ion are detected in the bottom Al layer. The separate effects of potential and kinetic energy on the tunneling yield are investigated by varying the charges state of the Ar projectile ions from 2+ to 9+ for kinetic energies in the range from 1 to 12 keV. The tunneling yield is found to scale linearly with the potential energy of the projectile.
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