The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators.
The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier(CdTe) and well-region(HgTe) are altered by replacing them with the alloy Cd$_{x}% $Hg$_{1-x}$Te of various stoichiometries, the critical width can be changed.The critical quantum well width is shown to depend on temperature, applied stress, growth directions and external electric fields. Based on these results, a novel device concept is proposed that allows to sw…
A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions with Nb as superconductor. Although the Nb-HgTe interfaces have a low transparency, we observe a strong zero-bias anomaly in the differential resistance measurements. This anomaly originates from proximity-induced superconductivity in the HgTe surface states. In the most transparent junction, we observe periodic oscillations of the differential resistance as…
We use Superconducting QUantum Interference Device (SQUID) microscopy to characterize the current-phase relation (CPR) of Josephson Junctions from 3-dimentional topological insulator HgTe (3D-HgTe). We find clear skewness in the CPRs of HgTe junctions ranging in length from 200 nm to 600 nm. The skewness indicates that the Josephson current is predominantly carried by Andreev bound states with high transmittance, and the fact that the skewness persists in junctions that are longer than the mean free path suggests that the effect may be related to the helical nature of the Andreev bound states …
We investigate the superradiance effects in three-dimensional topological insulator HgTe with conducting surface states. We demonstrate that the superradiance can be explained using the classical electrodynamic approach. Experiments using the continuous-wave spectroscopy allowed to separate the energy losses in the system into intrinsic and radiation losses, respectively. These results demonstrate that the superradiance effects are not sensitive to the details of the band structure of the material.
The quantum spin Hall (QSH) effect is the property of a new state of matter which preserves time-reversal, has an energy gap in the bulk, but has topologically robust gapless states at the edge. Recently, it has been shown that HgTe quantum wells realize this novel effect. In this work, we start from realistic tight-binding models and demonstrate the existence of the helical edge states in HgTe quantum wells and calculate their physical properties. We also show that 3d HgTe is a topological insulator under uniaxial strain, and show that the surface states are described by single-component mass…
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.
The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron - 3D hole scattering.
We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface states into the conduction band. Magnetotransport measurements allow to disentangle the different contributions of conduction band electrons, holes and Dirac electrons to the conductivity. The results are are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of ~15meV and gapless surface states.
We study theoretically 2D HgTe/CdTe quantum well topological insulator (TI) illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz range). We show that electron-hole asymmetry results in spin-dependent electric dipole transitions between edge and bulk states, and we predict an occurrence of a circular photocurrent. If the edge state is tunnel-coupled to a conductor, then the photocurrent can be detected by measuring an electromotive force (EMF) in the conductor, which is proportional t…
Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current can be transmitted from unpolarized states to totally spin polarized states. These features offer us and efficient way to control the topological edge state transport, and pave a way to construct t…
We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of counter propagating gapless edge modes. In the presence of an electric field, the energy is transported by counter propagating channels in the opposite direction. We test a hot carrier effect model and demonstrate that the energy transfer complies with the Wiedemann Franz law near the charge neutrality point in the edge transport regime.
Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10 $μ$m a quasiballistic transport via the edge states is observed.
The influence of bulk inversion asymmetry in [001] and [013] grown HgTe quantum wells is investigated theoretically. The bulk inversion asymmetry leads to an anti-crossing gap between two zero-mode Landau levels in a HgTe topological insulator, i.e., the quantum well with inverted band structure. It is found that this is the main contribution to the anti-crossing splitting observed in recent experimental magneto spectroscopic measurements. The relevant optical transitions involve different subbands, but the electron-electron interaction induced depolarization shift is found to be negligibly sm…
We present a theory of the electron structure and the Zeeman effect for the helical edge states emerging in two-dimensional topological insulators based on HgTe/HgCdTe quantum wells with strong natural interface inversion asymmetry. The interface inversion asymmetry, reflecting the real atomistic structure of the quantum well, drastically modifies both bulk and edge states. For the in-plane magnetic field, this asymmetry leads to a strong anisotropy of the edge-state effective $g$-factor which becomes dependent on the edge orientation. The interface inversion asymmetry also couples the counter…
Topological insulators can be seen as band-insulators with a conducting surface. The surface carriers are Dirac particles with an energy which increases linearly with momentum. This confers extraordinary transport properties characteristic of Dirac matter, a class of materials which electronic properties are "graphene-like". We show how HgTe, a material known to exhibit 2D spin-Hall effect in thin quantum wells,\cite{Konig2007} can be turned into a textbook example of Dirac matter by opening a strain-gap by exploiting the lattice mismatch on CdTe-based substrates. The evidence for Dirac matter…
We study indirect exchange interaction between magnetic impurities in the (001) CdTe/HgTe/CdTe symmetric quantum well. We consider low temperatures and the case of the chemical potential placed in the energy gap of the 2D quasiparticle spectrum. We find that the indirect exchange interaction is suppressed exponentially with the distance between magnetic impurities. The presence of inversion asymmetry results in oscillations of the indirect exchange interaction with the distance and generates additional terms which are non-invariant under rotations in the (001) plane. The indirect exchange inte…
We study the disorder effect on the transport properties in the HgTe/CdTe semiconductor quantum wells. We confirm that at a moderate disorder strength, the initially un-quantized two terminal conductance becomes quantized, and the system makes a transition to the novel topological Anderson insulator (TAI). Conductances calculated for the stripe and cylinder samples reveal the topological feature of TAI and supports the idea that the helical edge states may cause the anomalous quantized plateaus. The influence of disorder is studied by calculating the distributions of local currents. Base on th…
The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided inform…
Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain (ε > 2.6%) due to the combination effects of strain and spin orbital coupling (SOC). Under the 2.6%< ε <4.2% tensile strain, the band inversion and topological nontrivial gap are induced by the SOC. For ε >4.2%, the band inversion is already realized…
This work presents theoretical demonstration of a carrier trap unit formed by dual topological insulator constrictions (TIC) on the HgTe/CdTe quantum well (QW) with inverted band structures. The sample of HgTe/CdTe QW is patterned into a Hall bar device and a topological quantum dot is created by adding split gate electrodes closely on the QW. In sharp contrast to conventional semiconductor quantum dots, the presence or absence of topological edge states in the proposed quantum hall bar system leads to distinct propagating/insulating state of the TICs with large on/off ratio. This topological …
We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixin…
Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D topological insulator or the ordinary insulator, forming a complicated in-plane network of helical channels along the zero-gap lines. We have studied experimentally the transport properties of the critical width HgTe qua…
We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality poin…
The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger than the electron-type one. The thermopower linearly increases with temperature. We present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity an…
We theoretically study the thermoelectric transport properties of strained HgTe in the topological insulator phase. We developed a model for the system using a Dirac Hamiltonian including the effect of strain induced by the interface between HgTe and the CdTe substrate. The conductivity tensor was explored assuming the electrons are scattered by charge impurities, while the thermopower tensor was addressed using the Mott relation. Seebeck and Nernst responses exhibit remarkable enhancements in comparison with other two-dimensional Dirac materials, such as graphene, germanane, prosphorene and s…
The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measurements of the HgTe-based double quantum wells in both gapless and gapped state and observed numerous crossings between the Landau levels belonging to different subbands. We analyze the Landau level cro…
Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales, and suggests that edge states can be addressed sele…
Three-dimensional topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical spin polarization of the surface states, the coupling of a 3D topological insulator to a nearby superconductor is expected to generate unconventional proximity induced $p$-wave superconductivity. We report here on the development and measurements of SQUIDs on the surface of strained HgTe, a 3D topological insulator, as a potential tool to investigate this effect.
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker q…
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using …
We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the so-called normal regime (the topologically trivial case) and the so-called inverted regime (the topologically non-trivial case). Thus, it is possible to verify the topological order of a two-dimensional topological insulator not only via observable edge properties but also via observable bulk properties. This is important because we show that under certain conditio…
We study the hyperfine interaction between the nuclear spins and the electrons in a HgTe quantum well, which is the prime experimentally realized example of a two-dimensional topological insulator. The hyperfine interaction is a naturally present, internal source of broken time-reversal symmetry from the point of view of the electrons. The HgTe quantum well is described by the so-called Bernevig-Hughes-Zhang (BHZ) model. The basis states of the BHZ model are combinations of both S- and P-like symmetry states, which means that three kinds of hyperfine interactions play a role: (i) The Fermi con…
Recent experiments reveal that the strained bulk HgTe can be regard as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the magnetotransport properties of the HgTe surface states at magnetic field. We analytically derive the zero frequency Hall and collisional conductivities, and find that the substrate induced strain associated with the surface index of carriers, can result in the well seperated surface quantum Hall plateaus and Shubnikov-de Haas oscillations. These effects can be used to generate and detect surface polarization.
We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a functio…
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $\mathbf{k\cdot p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is c…
The proximity-induced superconducting state in the 3-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point contact as a spectroscopic tool (Andreev point contact spectroscopy). By analyzing the conductance as a function of voltage for various temperatures, magnetic fields and gate-voltages, we find evidence, in equilibrium, for an induced order parameter in HgTe of $70\,μ$eV and a niobium order parameter of $1.1\,$meV. To understand the full conductance curve as a function of applied voltage we suggest a non-equilibrium drive…
We investigate theoretically the electron spin states in disk-shaped HgTe topological insulator quantum dots (TIQDs) containing a single magnetic $Mn^{2+}$ ion. We show that the energy spectrum and the electron density distribution of the topological edge states in HgTe TIQD can be modulated significantly by the position of the magnetic $Mn^{2+}$ ion. The numerical results further demonstrate that the electric fields not only tune the spin splittings of edge states via the $\emph{sp-d}$ exchange interaction between the electron (hole) and the magnetic $Mn^{2+}$ ion but also give rise to the br…
Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is effectively free of mobile charge carriers. These properties enable a study of transport through its unconventional surface states without being hindered by a parallel bulk conductance. Here, we show transport experiments on HgTe-based Josephson junctions to investigate the appearance of the predicted Majorana states at the interface between a topological insulator and a superconductor. Interestingly, we observe a dissipationless supercurrent flow th…
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures…
We study how the surface states in the strong topological insulator Bi$_2$Se$_3$ are influenced by finite size effects, and compare our results with those recently obtained for 2D topological insulator HgTe. We demonstrate two important distinctions: \textit{(i)} contrary to HgTe, the surface-states in Bi$_2$Se$_3$ display a remarkable robustness towards decreasing the width $L$ down to a few nm, thus ensuring that the topological surface states remain intact, and \textit{(ii)} the gapping due to the hybridization of the surface states features an oscillating exponential decay as a function of…
HgTe quantum wells and surfaces of three-dimensional topological insulators support Dirac fermions with a single-valley band dispersion. In the presence of disorder they experience weak antilocalization, which has been observed in recent transport experiments. In this work we conduct a comparative theoretical study of the weak antilocalization in HgTe quantum wells and topological surface states. The difference between these two single-valley systems comes from a finite band gap (effective Dirac mass) in HgTe quantum wells in contrast to gapless (massless) surface states in topological insulat…
We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band via the Dirac surface states into the conduction band and allows studying Landau quantization in situations where different species of charge carriers contribute to magnetotransport. Landau fan charts, mapping the conductivity $ σ_{xx}(V_g, B) $ in the whole magnetic field - gate voltage range, can be divided into six areas, depending on the state of the parti…
In recent years, Majorana physics has attracted considerable attention in both theoretical and experimental studies due to exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here we report experimental evidence for topological superconductivity induced in a HgTe quantum well, a two-dimensional topological insulator that exhibits the quantum spin Hall effect. The ac Josephson e…
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant function of magnetic field between two $i=2$ states (plateaus at $ρ_{xy}=h/ie^2$) separated by an intermediate $i=1$ state, which looks like some anomalous peak on the extra-long $i=2$ plateau when weakly expressed. The anomalous peak apparently separates two different regimes: a traditional QHE at relatively weak fields for a small density of mobile holes $p_s$ …
We show that hybrid structures of topological insulators and materials without topological protection can be employed to create perfectly conducting channels hosted in the non-topological part. These states inherit the topological protection from the proximity of the topological insulator but are more fragile to time-reversal symmetry breaking because of their extended character. We explore their formation in the band structure of model hybrid systems as well as realistic heterostructures involving HgTe/CdTe-based two-dimensional topological insulators. Using numerical quantum transport calcul…
We study nonlocal resistance in an H-shaped two-dimensional HgTe/CdTe quantum well consist of injector and detector, both of which can be tuned in the quantum spin Hall or metallic spin Hall regime. Because of strong spin-orbit interaction, there always exist spin Hall effect and the nonlocal resistance in HgTe/CdTe quantum well. We find that when both detector and injector are in the quantum spin Hall regime, the nonlocal resistance is quantized at $0.25\frac{h}{e^2}$, which is robust against weak disorder scattering and small magnetic field. While beyond this regime, the nonlocal resistance …
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gat…
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resi…
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimensional topological insulators with protected gapless surface states at any surface. By employing a six-band k.p model, we determine the spin textures of the topological surface states of strained HgTe using their close relations with the mirror Chern numbers of the system and the orbital composition of the surface states. We show that at surfaces with C2v point group symmetry an increase in the strain magnitude triggers a topological phase transition where the winding number of the surface state …
We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the electronic state changes from a normal to an "inverted" type at a critical thickness $d_c$. We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss the methods for experimental detection of the QSH effect.
Transformation of an energy spectrum and wave functions in the crossover from two- to three-dimensional topological insulator in HgTe quantum wells: long and thorny way
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and magnetic barrier inside a non-completely insulating bulk. An attenuated quantum spin Hall (QSH) effect occurs in the gaped region with an apparent Klein-like paradox. Even more interesting, for strong potential regime, the interaction between the quasiparticles and the barriers allows spin inversion of this electronic states in a distinct channel conduction. …
The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed with Mn. Firstly, a novel quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic f…
We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal symmetry and thereby, suppresses the edge state transport. A linear magnetoresistance is observed in low magnetic fields, when the chemical potential moves through the the bulk gap. That magnetoresistance is well described by numerical calculations of the edge states magnetotransport in the presence of nonmagnetic disorder. With magnetic field increasing th…
We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films …
