Emergent quantum Hall effects below $50$ mT in a two-dimensional topological insulator
Saquib Shamim, Wouter Beugeling, Jan Böttcher, Pragya Shekhar, Andreas Budewitz, Philipp Leubner, Lukas Lunczer, Ewelina M. Hankiewicz, Hartmut Buhmann, Laurens W. Molenkamp
The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed with Mn. Firstly, a novel quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of $\sim 50$ mT. Secondly, tuning towards the bulk $p$-regime, we resolve multiple quantum Hall plateaus at fields as low as $20 - 30$ mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe and their occurrence at very low fields make them an ideal candidate for interfacing with superconductors to realize chiral Majorana fermions.
We examine the magnetic field driven insulator-quantum Hall-insulator transitions of the two dimensional hole gas in a Ge/SiGe quantum well. We observe direct transitions between low and high magnetic field insulators and the $ν=1$ quantum Hall state. With increasing magnetic field, the transitions from insulating to quantum Hall and quantum Hall to insulating are very similar with respect to their transport properties. We address the temperature dependence around the transitions and show that the characteristic energy scale for the high field transition is larger.
Intrinsic contribution to the spin Hall effect in a two-dimensional silicene is considered theoretically within the linear response theory and Green function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low voltages to the conventional insulator phase at higher voltages. This transition resembles recently reported phase transition in a bilayer graphene. The spin-orbit interaction responsible for this transition in silicene is much stronger than in graphene, which sho…
The quantum anomalous Hall effect has been theoretically predicted and experimentally verified in magnetic topological insulators. In addition, the surface states of these materials exhibit a hedgehog-like "spin" texture in momentum space. Here, we apply the previously formulated low-energy model for Bi$_2$Se$_3$, a parent compound for magnetic topological insulators, to a slab geometry in which an exchange field acts only within one of the surface layers. In this sample set up, the hedgehog transforms into a skyrmion texture beyond a critical exchange field. This critical field marks a transi…
We study responses to metric perturbation in topological insulator models. In this paper we introduce a novel quantity, Hall viscosity to particle density ratio, which is analogous to the viscosity to entropy ratio suggested by AdS/CFT correspondence. This quantity corresponds to the filling fraction which characterizes the quantum Hall states, and hence it could be discussed in Haldane's zero-field quantum Hall system. We also consider dissipationless viscosity in the time reversal invariant quantum spin Hall system, which is related to a spin current.
Statistics of level spacing and magnetization are studied for the phase diagram of the integer quantum Hall effect in a 2D finite lattice model with Anderson disorder.
Topological edge states are predicted to be responsible for the high efficient thermoelectric response of topological insulators, currently the best thermoelectric materials. However, to explain their figure of merit the coexistence of topological electrons, entropy and phonons can not be considered independently. In a background that puts together electrodynamics and topology, through an expression for the topological intrinsic field, we treat relativistic phonons within the topological surface showing their ability to modulate the Berry curvature of the bands and then playing a fundamental r…
We describe a new phase transition of the bilayer quantum Hall ferromagnet at filling fraction $ν= 1$. In the presence of static disorder (modeled by a periodic potential), bosonic $S=1/2$ spinons can undergo a superfluid-insulator transition while preserving the ferromagnetic order. The Mott insulating phase has an emergent U(1) photon, and the transition is between Higgs and Coulomb phases of this photon. Physical consequences for charge and counterflow conductivity, and for interlayer tunneling conductance in the presence of quenched disorder are discussed.
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity $σ_{yx}=0$ at zero Fermi energy, to a Hall ins…
Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall (QAH) insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quant…
We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall condu…
We study spin conductivity of the surface states in a thin film of a topological insulator with Kubo formulas. Hybridization between the different sides of the film opens a gap at the Dirac point. We found that in the gapped region spin conductivity remains finite. In the gapless region near the band gap spin conductivity is enhanced. These findings make a thin film of a topological insulator as a promising material for spintronic applications.
Phase transitions between the quantum spin Hall and the insulator phases in three dimensions are studied. We find that in inversion-asymmetric systems there appears a gapless phase between the quantum spin Hall and insulator phases in three dimensions, which is in contrast with the two-dimensional case. Existence of this gapless phase stems from a topological nature of gapless points (diabolical points) in three dimensions, but not in two dimensions.
We present an analytical scaling theory for localization in a two-dimensional hierarchical network model that is designed to represent phase-coherent electron transport in the quantum-Hall regime. Scaling expressions for both the longitudinal and Hall resistivities are derived. In agreement with recent numerical studies, we find that the Hall resistivity is quantized in the metallic phase but diverges in the insulating phase. This suggests that the characteristics of a quantized Hall insulator can occur only in the presence of a strong dephasing mechanism.
We predict the occurrence of a novel type of atomic-scale spin lattice in an Fe monolayer on the Ir(001) surface. Based on density functional theory calculations we parametrize a spin Hamiltonian and solve it numerically using Monte-Carlo simulations. We find the stabilization of a three-dimensional spin structure arranged on a 3x3 lattice. Despite an almost vanishing total magnetization we predict the emergence of a large anomalous Hall effect, to which there is a significant topological contribution purely due to the real space spin texture at the surface.
The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase…
Electron spin-momentum locking together with background magnetic textures can significantly alter the electron transport properties. We theoretically investigate the electron transport at the interface between a topological insulator and a magnetic insulator with magnetic skyrmions on the top. In contrast to the conventional topological Hall effect in normal metals, the skyrmions yield an additional contribution to the anomalous Hall conductivity even in the absence of in-plane magnetic texture, arising from the phase factor characteristic to Dirac electrons acquired at skyrmion boundary.
We have studied the tachyonic excitations in the junction of two topological insulators in the presence of an external magnetic field. The Landau levels, evaluated from an effective two-dimensional model for tachyons, and from the junction states of two topological insulators, show some unique properties not seen in conventional electrons systems or in graphene. The $ν=1/3$ fractional quantum Hall effect has also a strong presence in the tachyon system.
The mapping between the metal-insulator transition of the quantum Hall system and a superfluid-to-insulator transition is revisited based on a disordered anyon model. The one-parameter scaling of the superfluid-to-insulator transition is employed for the analysis of the scaling behavior of the integer quantum Hall transitions. The analysis reveals the direct transition from a quantum Hall plateau to the insulator in weak disorder limit, and a float-down transition for strong disorders. In either cases, the transition corresponds to a non-chirality superfluid-to-insulator transition, with the l…
This is a Reply to a Comment by Tanaka and Machida. We provide some details of the derivation of the effective field theory for integer quantum Hall transitions using the non-Abelian chiral anomaly.
The concept of topological insulator (TI) has introduced a new point of view to condensed-matter physics, relating a priori unrelated subfields such as quantum (spin, anomalous) Hall effects, spin-orbit coupled materials, some classes of nodal superconductors and superfluid $^3$He, etc. From a technological point of view, topological insulator is expected to serve as a platform for realizing dissipationless transport in a non-superconducting context. The topological insulator exhibits a gapless surface state with a characteristic conic dispersion (a surface Dirac cone). Here, we review peculia…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a non-zero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we pr…
We report a current scaling study of a quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator on the surface of a heterostructure film of magnetic topological insulators. The transition was observed by tilting the magnetization while measuring the Hall conductivity $σ_{xy}$. The transition curves of $σ_{xy}$ taken under various excitation currents cross each other at a single point, exemplifying a quantum critical behavior of the transition. The slopes of the transition curves follow a power law dependence of the excitation current, giving a scaling exponen…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of spin through an insulator or vacuum to reach a ferromagnet without transferring charge. In a normal metal/insulator/ferromagnetic insulator trilayer (such as Pt/oxide/YIG), the quantum tunneling explains the spin-transfer torque and spin pumping that exponentially decay with the thickness of the insulator. In a normal metal/insulator/ferromagnetic metal tril…
The original motivation of great interest to topological insulators was the hope to observe the quantum spin Hall effect. Therefore if a material is in the topological insulator state they frequently call it the quantum spin Hall state. However, despite impressive experimental results confirming the existence of the quantum spin Hall state, the quantum spin Hall effect has not yet been detected. After a short overview of what was originally suggested as the quantum spin Hall effect (quantum spin conductance determined by the topological Chern number) the paper analyzes the crucial role of the …
Negative longitudinal magnetoresistance, in the presence of an external magnetic field parallel to the direction of an applied current, has recently been experimentally verified in Weyl semimetals and topological insulators in the bulk conduction limit. The appearance of negative longitudinal magnetoresistance in topological semimetals is understood as an effect of chiral anomaly, whereas it is not well-defined in topological insulators. Another intriguing phenomenon, planar Hall effect - appearance of a transverse voltage in the plane of applied co-planar electric and magnetic fields not perf…
We study the quantum Hall effect of Dirac fermions on the surface of a Wilson-Dirac type topological insulator thin film in the strong topological insulating phase. Although a magnetic field breaks time reversal symmetry of the bulk, the surface states can survive even in a strong field regime. We examine how the Landau levels of the surface states are affected by symmetry breaking perturbations.
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, …
With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some experiments have reported intra-Landau level structure that is suggestive of fractional quantum Hall effect. This paper discusses the feasibility of fractional quantum Hall effect from a theoretical perspective, and argues that while this effect should occur, ideally, in the $n=0$ and $|n|=1$ Landau levels, it is ruled out in higher $|n|$ Landau levels. Unlike…
We study the phase structure and Hall conductance quantization in weakly coupled multi-layer electron systems in the integer quantum Hall regime. We derive an effective field theory and perform a two-loop renormalization group calculation. It is shown that (i) finite interlayer tunnelings (however small) give rise to successive metallic and insulating phases and metal-insulator transitions in the unitary universality class. (ii) The Hall conductivity is not renormalized in the metallic phases in the 3D regime. (iii) The Hall conductances are quantized in the insulating phases. In the bulk quan…
The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the qua…
We show that a weak hexagonal periodic potential could transform a two-dimensional electron gas with an even-denominator magnetic filling factor to a quantum anomalous Hall insulator of composite fermions, giving rise to fractionally quantized Hall effect. The system provides a realization of the Haldane honeycomb-net model, albeit in a composite fermion system. We further propose a trial wave function for the state, and numerically evaluate its relative stability against the competing Hofstadter state. Possible sets of experimental parameters are proposed.
CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high Néel temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer topological insulator thin films using \emph{ab initio} density functional theory. We find that the intrinsic parts of the total anomalous Hall conductivities of the thin films are non-zero, and approximately quantized. The Néel temperature of CrSb bilayers on few-layer topological insulator thin films is found to be approximately two times larger than that of an…
Clean topological insulators exposed to a magnetic field develop Landau levels accompanied by a nonzero Hall conductivity for the infinite slab geometry. In this work we consider the case of disordered topological insulator nanowires and find, in contrast, that a zero Hall plateau emerges within a broad energy window close to the Dirac point. We numerically calculate the conductance and its distribution for a statistical ensemble of disordered nanowires, and use the conductance fluctuations to study the dependence of the insulating phase on system parameters, such as the nanowire length, disor…
The magneto-transport and magnetization measurements of Sb1.90Cu0.10Te3 were performed at different temperatures and different fields. Magneto-transport measurement at high field indicates the coexistence of both bulk and surface states. The magnetization shows the induced antiferromagnetic ordering with Cu doping and the observed quantum oscillation in it indicates that magnetization in Sb1.90Cu0.10Te3 is the bulk property. The non linearity in Hall data suggests the existence of anomalous and topological Hall effect. The anomalous and topological Hall effect (THE) from measured hall data of …
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metall…
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization meas…
The reentrant integer quantum Hall effects (RIQHE) are due to formation of electronic crystals. We show analytically and numerically that topological textures in the charge density distribution in these crystals in the vicinity of charged defects strongly reduce energy required for current-carrying excitations. The theory quantitatively explains sharp insulator-metal transitions experimentally observed in RIQHE states. The insulator to metal transition in RIQHE emerges as a thermodynamic unbinding transition of topological charged defects.
We investigate the Hall conductance of a two-dimensional Chern insulator coupled to an environment causing gain and loss. Introducing a biorthogonal linear response theory, we show that sufficiently strong gain and loss lead to a characteristic non-analytical contribution to the Hall conductance. Near its onset, this contribution exhibits a universal power-law with a power 3/2 as a function of Dirac mass, chemical potential and gain strength. Our results pave the way for the study of non-Hermitian topology in electronic transport experiments.
The ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junction exhibits thermal and electrical quantum Hall effects. The generated Hall voltage and transverse temperature gradient can be controlled by the directions of magnetizations in the FM leads, which inspires the use of FM-TI-FM junctions as electrical and as heat switches in spintronic devices. Thermal and electrical Hall coefficients are calculated as functions of the magnetization directions in ferromagnets and the spin-relaxation time in TI. Both the Hall voltage and the transverse temperature gradient decrease but are not com…
It is shown that the presence of matrix dipole moments induced by external electric fields can modify the Hall response in two dimensional Topological insulators. In the case of the Quantum Anomalous Hall effect the induced transverse currents acquire an extra term being proportional to the Hall conductance and the time derivative of the applied electric field. In the case of the Quantum Spin Hall effect both a spin and charge transverse currents appear simultaneously. In virtue of the bulk-edge correspondence the coupling between the chiral edge channels and the electromagnetic field changes …
We study the temperature dependence of spin Hall magnetoresistance (SMR) in antiferromagnetic insulator (AFI)/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the SMR depends on the amplitude of the spin, thickness of the AFI layer, and randomness of the exchange interactions. Our results for simple quantum spin models provide a useful starting point for understanding SMR measurements on atomic layers of magnetic compounds.
Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of magnetic proximity effect (MPE) imposed to TIs. Here, we report the observation of nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on MI thulium and yttrium iron garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi2Se3 grown on nonmagnetic…
We numerically study disorder effects in Bernevig-Hughes-Zhang (BHZ) model, and find that Anderson transition of quantum spin-Hall insulator (QSHI) is determined by model parameters. The BHZ Hamiltonian is equivalent to two decoupled spin blocks that belong to the unitary class. In contrast to the common belief that a two-dimensional unitary system scales to an insulator except at certain critical points, we find, through calculations scaling properties of the localization length, level statistics, and participation ratio, that a possible exotic metallic phase emerges between a QSHI and a norm…
Direct transitions, driven by disorder, from several integral quantum Hall states to an insulator have been observed in experiment. This finding is enigmatic in light of a theoretical phase diagram, based on rather general considerations, that predicts a sequence of transitions in which the integer $n$ characterizing the Hall conductivity is reduced successively by unity, eventually going from $n=1$ into an insulator. In this work, we suggest that the direct transition occurs because, in certain parameter regime, the edge states of different Landau levels are strongly coupled and behave as a s…
We present the theoretical description for a class of experimental setups that measure quantum Hall coefficients in ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junctions. We predict that varying the magnetization direction in ferromagnets, one can change the induced Hall voltage and transverse temperature gradient from the maximal values, corresponding to the quantized Hall coefficients, down to their complete suppression to zero. We provide detailed analysis of thermal and electrical Hall resistances as functions of the magnetization directions in ferromagnets, the spin-scatterin…
We study mesoscopic spin Hall effect on the surface of topological insulator with a step-function potential. The giant spin polarization induced by a transverse electric current is derived analytically by using McMillan method in the ballistic transport limit, which oscillates across the potential boundary with no confinement from the potential barrier due to the Klein paradox, and should be observable in spin resolved scanning tunneling microscope.
We present a combined theoretical and experimental study, investigating the origin of the enhanced non-adiabaticity of magnetic vortex cores. Scanning transmission X-ray microscopy is used to image the vortex core gyration dynamically to measure the non-adiabaticity with high precision, including a high confidence upper bound. Using both numerical computations and analytical derivations, we show that the large non-adiabaticity parameter observed experimentally can be explained by the presence of local spin currents arising from a texture-induced emergent Hall effect. This enhanced non-adiabati…
In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we al…
The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these 2d materials to analyse the rich phenomenology that arises from the interplay between topology, disorder, valley and spin degrees of freedom. For this purpose, we consider a minimal multi-orbital real-space tight-binding hamiltonian and use a Chebyshev polynomial expansion technique. We discuss how the quantum spin Hall states are affected by disorder, sublattice resolved potent…
The spectral properties of a disordered electronic system at the metal-insulator transition point are investigated numerically. A recently derived relation between the anomalous diffusion exponent $η$ and the spectral compressibility $χ$ at the mobility edge, $χ=η/2d$, is confirmed for the integer quantum Hall delocalization transition. Our calculations are performed within the framework of an unitary network-model and represent a new method to investigate spectral properties of disordered systems.
The quantum Hall effect is studied numerically in modulated two-dimensional electron systems in the presence of disorder. Based on the scaling property of the Hall conductivity as well as the localization length, the critical energies where the states are extended are identified. We find that the critical energies, which are distributed to each of the subbands, combine into one when the disorder becomes strong, in the way depending on the symmetry of the disorder and/or the periodic potential.
