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arXiv 2107.02307cond-mat.mes-hall
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共线反铁磁体邻近拓扑绝缘体中的大反常霍尔效应

Large Anomalous Hall Effect in Topological Insulators Proximitized by Collinear Antiferromagnets

Chao Lei, Hua Chen, Allan H. MacDonald

摘要:

由于CrSb具有高的Néel温度($\sim$ 700 K)和半金属特性,它在室温反铁磁自旋电子学应用中是一种很有吸引力的材料。利用\emph{ab initio}密度泛函理论研究了CrSb双层膜在少层拓扑绝缘体薄膜上的磁性.我们发现薄膜的总反常霍尔电导率的本征部分是非零的,并且近似量子化。发现在少层拓扑绝缘体薄膜上的双层CrSb的Néel温度比孤立的CrSb薄膜的Néel温度高约两倍。由于CrSb的费米能级态密度低,引入无序可以实现霍尔量子化。因此,拓扑绝缘体表面的CrSb双层膜是高温量子反常霍尔效应的有吸引力的候选者。

英文摘要:

CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high Néel temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer topological insulator thin films using \emph{ab initio} density functional theory. We find that the intrinsic parts of the total anomalous Hall conductivities of the thin films are non-zero, and approximately quantized. The Néel temperature of CrSb bilayers on few-layer topological insulator thin films is found to be approximately two times larger than that of an isolated CrSb thin film. Due to the low Fermi level density of states of CrSb, Hall quantization might be achievable by introducing disorder. CrSb bilayers on topological insulator surfaces are therefore attractive candidates for high-temperature quantum anomalous Hall effects.

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