arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2005.01451cond-mat.mes-hall
收藏

Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

A. S. Yaroshevich, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov

英文摘要:

The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑