The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the emergence of ferroelectricity in the [111]-oriented Hf0.5Zr0.5O2 thin films, but the fundamental mechanism of ferroelectric polarization in such films remains poorly understood. In this paper, we employ density-functional-theory calculations to investigate structural and polarization properties of the R3m HfO2 phase. We find that the film thickness and in-plane compressive strain effects play a key role in stabilizing the R3m phase leading to robust ferroelectricity of [111]-oriented R3m HfO2.
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, whic…
Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size. In this work, rhombohedral graphene with thickness up to 9 layers and areas up to ~50 micrometers square is grown via chemical vapor deposition (CVD) on suspended Cu foils and transferred onto target…
Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal that the (111)-oriented ZrO2 films are under epitaxial compressive strain and display a switchable ferroelectric polarization of about 20.2 μC/cm2 with a coerc…
The nanostructural evolution of the strain-induced structural phase transition in BiFeO3 is examined. Using high-resolution X-ray diffraction and scanning-probe microscopy-based studies we have uniquely identified and examined the numerous phases present at these phase boundaries and have discovered an intermediate monoclinic phase in addition to the previously observed rhombohedral- and tetragonal-like phases. Further analysis has determined that the so-called mixed-phase regions of these films are not mixtures of rhombohedral- and tetragonal-like phases, but intimate mixtures of highly-disto…
Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for doping and strain engineering to increase the thickness in epitaxial thin films. Based on surface energy considerations supported by ab initio calculations, we show that a pure ZrO2 epitaxial thin film exhibits a ferroelectric rhombohedral phase (r-phase, with R3m space group) more stable than for the Hf0.5Zr0.5O2 (HZO) and pure HfO2 cases. In particular, for a thickness up to 37 nm we experimentally evidence a single…
In this work we analyze the finite-size effects on the structural properties and on the polarization of the rhombohedral phase of HfO$_2$ subjected to a biaxial compressive strain. We show how the presence of surface charges affects the polarization, leading to a strong reduction with respect to its bulk value. This reduction can be ascribed to two mechanisms: the coupling between compressive strain and the phase-transition order parameter; the changes in the ferroelectric distortion. We give two alternative explanations of this phenomenon: from an atomistic point of view, analyzing the evolut…
Using the Landau-Ginzburg-Devonshire theory, an influence of the misfit strain and surface screening charges, as well as the role of the flexoelectric effect, have been studied by numerical modelling in the case of a rhombohedral lead zirconate-titanate ferroelectric/ferroelastic thin film with an anisotropic misfit produced by a substrate. It was established that the magnitude and sign of the misfit strain influence the domain structure and predominant directions of the polarization vector, providing misfit-dependent phases with different favourable polarization components. Whilst strong enou…
Considerable work has focused on the use of epitaxial strain to engineer domain structures in ferroic materials. Here, we revisit the observed reduction of domain variants in rhombohedral BiFeO3 films on rare-earth scandate substrates. Prior work has attributed the reduction of domain variants to anisotropic in-plane strain, but our findings suggest that the monoclinic distortion of the substrate, resulting from oxygen octahedral rotation, is the driving force for variant selection. We study epitaxial BiFeO3 DyScO3 (110)o heterostructures with and without ultrathin, cubic SrTiO3 buffer layers …
A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of individual switching processes, and their activation fields. Complementary, the phenomenological Landau-Ginzburg-Devenshire theory is used to analyze the impact of external field and stress on switching ba…
The anisotropic optical properties of multiferroic BiFeO$_3$ thin films have been determined with Mueller matrix ellipsometry at room-temperature. The full dielectric tensors of tetragonal-like and rhombohedral-like BiFeO$_3$ phases epitaxially grown on LaAlO$_3$ and SrTiO$_3$ single crystal substrates, respectively, within the spectral range of 0.6 and 6.5 eV are reported. Strain-driven anisotropy changes and transition shifts are observed as well as evidence of sub-band gap many-particle excitations are found. The transition shifts, mostly to higher energies for the highly strained tetragona…
We report on theoretical and experimental investigation of A-site driven ferroelectricity in ferromagnetic La2NiMnO6 thin films grown on SrTiO3 substrates. Structural analysis and density functional theory calculations show that epitaxial strain stretches the rhombohedral La2NiMnO6 crystal lattice along the [111]cubic direction, triggering a displacement of the A-site La ions in the double perovskite lattice. The lattice distortion and the A-site displacements stabilize a ferroelectric polar state in ferromagnetic La2NiMnO6 crystals. The ferroelectric state only appears in the rhombohedral La2…
We present results from ab initio calculations of the mechanical properties of the rhombohedral phase (beta) of vanadium metal reported in recent experiments, and other predicted high-pressure phases (gamma and bcc), focusing on properties relevant to dynamic experiments. We find that the volume change associated with these transitions is small: no more than 0.15% (for beta - gamma). Calculations of the single crystal and polycrystal elastic moduli (stress-strain coefficients) reveal a remarkably small discontinuity in the shear modulus and other elastic properties across the phase transitions…
Epitaxial BiFeO3/SrRuO3 superlattices have been grown by pulsed laser deposition on a (001) oriented LaAlO3 substrate and probed by X-ray diffraction and Raman spectroscopy. To investigate the structural competition between rhombohedral BiFeO3 and orthorhombic SrRuO3 the total thickness of all SLs was kept constant and the bilayer thickness (period) Λ was varied. The interlayer strain effects are therefore tuned from large strain effects (short Λ period) to quasi-relaxed structure (large Λ). A complementary investigation using X-ray diffraction and phonon dynamics hints to change from a rhombo…
Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultr…
Epitaxially strained LaCoO3 (LCO) thin films were grown with different film thickness, t, on (001) oriented (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates. After initial pseudomorphic growth the films start to relieve their strain partly by the formation of periodic nano-twins with twin planes predominantly along the <100> direction. Nano-twinning occurs already at the initial stage of growth, albeit in a more moderate way. Pseudomorphic grains, on the other hand, still grow up to a thickness of at least several tenths of nanometers. The twinning is attributed to the symmetry lowering of the…
Using Landau-Ginzburg-Devonshire theory we describe 180-degree domain wall structure, intrinsic energy and carrier accumulation in rhombohedral phase of BaTiO3 as a function of the wall orientation and flexoelectric coupling strength. Two types of domain wall structures (phases of the wall) exist depending on the wall orientation. The low-energy 'achiral' phase occurs in the vicinity of the {110} wall orientation and has odd polarization profile invariant with respect to inversion about the wall center. The second 'chiral' phase occurs around {211} wall orientations and corresponds to mixed pa…
We investigate MCA of CoFe(011) thin films as a function of strength of strain and film thickness has been studied. It is elucidated that perpendicular magnetocystalline anisotropy (MCA) energy (EMCA) is getting stronger with compressed xy-plane lattice constant while in-plane MCA is become an easy-axis by tensile strain on xy-plane. The reason of the EMCA behaviors can be explained by features of electronic structures.
The presence of a space charge region induces an internal electric field within the charged region that, in a ferroelectric material, would rotate the polarisations to align with the field. The strength of the induced field would therefore determine the domain patterns and polarisation switching properties of the material. Using a phase-field model, we investigate the effect of charged layers in fully and partially depleted BiFeO$_3$ thin films in the rhombohedral phase. While the domain pattern in a charge-free BiFeO$_3$ film consists of only two polarisation variants, we observe complex patt…
We present the temperature- and thickness-dependent structural and morphological evolution of strain induced transformations in highly-strained epitaxial BiFeO3 films deposited on LaAlO3 (001) substrates. Using high-resolution X-ray diffraction and temperature-dependent scanning-probe-based studies we observe a complex temperature- and thickness-dependent evolution of phases in this system. A thickness-dependent transformation from a single monoclinically distorted tetragonal-like phase to a complex mixed-phase structure in films with thicknesses up to ~200 nm is the consequence of a strain-in…
High-energy x-ray diffraction experiments peformed on rhombohedral (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3(PZN-xPT) crystals with x= 4.5 and 8% show that an electric field applied along the [001] direction induces the tetragonal phase, as proposed by Park and Shrout. Our experiments reveal that in 4.5PT such phase change occurs via a third phase with monoclinic symmetry, MA, which is observed at intermediate field values. This is in agreement with first-principles calculations by Fu and Cohen predicting the rotation of the polarization between the rhombohedral and tetragonal phases in this material. A d…
The effect of 3-dimensional strain state on the magnetocaloric properties of epitaxial La0.8Ca0.2MnO3 (LCMO) thin films grown on two types of substrates, SrTiO3 (001) (STO) and LaAlO3 (001) (LAO) has been studied as a function of film thickness within the range of 25 to 300 nm. The STO substrate imposes an in-plane tensile biaxial strain while LAO substrate imposes an in-plane compressive biaxial strain. The in-plane biaxial strain on LCMO by STO substrate gets relaxed more rapidly than that by LAO substrate but both LCMO/STO and LCMO/LAO show a maximum entropy change of 12.1 J/Kg-K and 3.2 J/…
A highly strained BiFeO3 (BFO) thin film is transformed between phases with distinct structures and properties by nanosecond-duration applied electric field pulses. Time-resolved synchrotron x-ray microdiffraction shows that the steady-state transformation between phases is accompanied by a dynamical component that is reversed upon the removal of the field. Steady-state measurements reveal that approximately 20% of the volume of a BFO thin film grown on a LaAlO3 substrate can be reproducibly transformed between rhombohedral-like and tetragonal-like phases by electric field pulses with magnitud…
The electrical, in-plane resistance as a function of temperature $R(T)$ of bulk and mesoscopic thin graphite flakes obtained from the same batch was investigated. Samples thicker than $\sim 30$ nm show metalliclike contribution in a temperature range that increases with the sample thickness, whereas a semiconductinglike behavior was observed for thinner samples. The temperature dependence of the in-plane resistance of all measured samples and several others from literature can be very well explained between 2 K and 1100 K assuming three contributions in parallel: a metalliclike conducting path…
The electronic band structure of Bi is calculated using state of the art electronic structure methods, including density functional theory and G$_0$W$_0$ quasiparticle approximations. The delicate ordering of states at the L point of the Brillouin zone, which determines the topological character of the electronic bands, is investigated in detail. The effect on the bands of strain, changing the structural parameters of the rhombohedral crystal structure, is shown to be important in determining this ordering and the resulting topological character.
We revisit the phase diagram of BaTiO$_3$ under biaxial strain using a first principles-based effective Hamiltonian approach. We show that, in addition to the tetragonal ($c$), quasi-rhombohedral ($r$), and quasi-orthorhombic ($aa$) ferroelectric phases, that have been discussed previously, there are temperature and strain regions, in particular under tensile strain, where the system decomposes into multi-domain structures. In such cases, the strained system, at least on a local level, recovers the same phase sequence as the unclamped bulk material. Furthermore, we extend these results from th…
The structural stability, electronic structure, and thermal transport properties of one to six quintuple layers (QLs) of Bi2Se3 are investigated by van der Waals density functional theory and semi-classical Boltzmann theory. The bandgap amounts to 0.41 eV for a single QL and reduces to 0.23 eV when the number of QLs increases to six. A single QL has a significantly higher thermoelectric figure of merit (0.27) than the bulk material (0.10), which can be further enhanced to 0.30 by introducing 2.5% compressive strain. Positive phonon frequencies under strain indicate that the structural stabilit…
We calculate the effect of epitaxial strain on the structure and properties of multiferroic bismuth ferrite, BiFeO3, using first-principles density functional theory. We find that, while small strains cause only quantitative changes in behavior from the bulk material, compressive strains of greater than 4% induce an isosymmetric phase transition accompanied by a dramatic change in structure. In striking contrast to the bulk rhombohedral perovskite, the highly strained structure has a c/a ratio of ~1.3 and five-coordinated Fe atoms. We predict a rotation of polarization from [111] (bulk) to nea…
X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile. We use this to calculate the direct influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of thin films with decreasing thickness, in excellent agreement with the observed behaviour. This work highlights the link between strain relaxation and strain gradients in epitaxial films, and shows the pressing…
One-Step Epitaxial Access to Rhombohedral Graphene Flat-Band States on Step-Bunched SiC
Institute for Advanced Studies, Wuhan University（武汉大学高等研究院）；Department of Physics, Southern University of Science and Technology（南方科技大学物理系）；School of Physics and Technology, Wuhan University（武汉大学物理科学与技术学院）
BiFeO3 thin films with various thicknesses were grown epitaxially on (001) LaSrAlO4 single crystal substrates using pulsed laser deposition. High resolution x-ray diffraction measurements revealed that a tetragonal-like phase with c-lattice constant ~4.65 Å is stabilized by a large misfit strain. Besides, a rhombohedral-like phase with c-lattice constant ~3.99 Å was also detected at film thickness of ~50 nm and above to relieve large misfit strains. In-plane piezoelectric force microscopy studies showed clear signals and self-assembled nanoscale stripe domain structure for the tetragonal-like …
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3 bottom layer using pulsed laser deposition technique. These films have fractal domain patterns and the domain width scales closely with the square root of film thickness, in accordance with the Landau-Lifschitz-Kittel (LLK) law. The Switching Spectroscopy Piezo-response Force Microscopy provides clear evidence for the ferroelectric switching behavior in all the …
The ferromagnetic properties of epitaxial La$_{0.5}$Sr$_{0.5}$CoO$_3$ thin films have been studied. The magnetic transition is affected by both strain and finite thickness. We have used a series of films of different thickness and on different substrates in order to quantitatively determine the change in Curie temperature contributed by each effect. The phase diagram of T$_C$ versus in-plane strain suggests that the ferromagnetic transition temperature is suppressed by tensile strain and enhanced by compressive strain. The general method of separating strain and finite thickness effects should…
Mechanically compatible and electrically neutral domain walls in tetragonal, orthorhombic and rhombohedral ferroelectric phases of BaTiO3 are systematically investigated in the framework of the phenomenological Ginzburg-Landau-Devonshire (GLD) model with parameters of Ref. [Hlinka and Marton, Phys. Rev. 74, 104104 (2006)]. Polarization and strain profiles within domain walls are calculated numerically and within an approximation leading to the quasi-one-dimensional analytic solutions applied previously to the ferroelectric walls of the tetragonal phase [W. Cao and L.E. Cross, Phys. Rev. 44, 5 …
We report on the structural and magnetic characterization of (110) and (001) La2/3Ca1/3MnO3 (LCMO) epitaxial thin films simultaneously grown on (110) and (001)SrTiO3 substrates, with thicknesses t varying between 8 nm and 150 nm. It is found that while the in-plane interplanar distances of the (001) films are strongly clamped to those of the substrate and the films remain strained up to well above t=100 nm, the (110) films relax much earlier. Accurate determination of the in-plane and out-of-plane interplanar distances has allowed concluding that in all cases the unit cell volume of the mangan…
In this work we are investigating the effect of strain in ultrathin Mn-Ga thin films on the magnetic properties at room temperature. Two different Mn-Ga compositions of which one is furthermore doped with Co were grown on Cr buffered MgO (001) substrates. Films with a thickness below 12nm are highly strained and it was observed that the ratio c/a vs. thickness is depending on composition. Using c/a as an order parameter the PMA is shown to be drastically reduced with increasing strain. These findings should be considered when generalizing and downscaling results obtained from films >20nm. Furt…
We carried out matched experiments and molecular dynamics simulations of the compression of nanopillars prepared from Cu$\vert$Au nanolaminates with 25 nm layer thickness. The stress-strain behavior obtained from both techniques are in excellent agreement. Variation of the layer thickness in simulations reveals an increase of the strength with decreasing layer thickness. Pillars fail through the formation of shear bands whose nucleation we trace back to the existence of surface flaws. Our combined approach demonstrates the crucial role of contact geometry in controlling the deformation mode an…
We propose a physical model which explains the existence of finite thickness wetting layers in epitaxially strained films. The finite wetting layer is shown to be stable due to the variation of the non-linear elastic free energy with film thickness. We show that anisotropic surface tension gives rise to a metastable enlarged wetting layer. The perturbation amplitude needed to destabilize this wetting layer decreases with increasing lattice mismatch. We observe the development of faceted islands in unstable films.
We report a strong thickness dependence of the complex frequency-dependent optical dielectric function in epitaxial CaMnO3(001) thin films on SrTiO3(001), LaAlO3(001), and SrLaAlO4(001) substrates. A doubling of the peak value of the imaginary part of the dielectric function and spectral shifts of 0.5 eV for a given magnitude of absorption are observed. On the basis of the experimental data and first-principles density functional theory calculations of the dielectric function, its evolution with thickness from 4 to 63 nm has several regimes. In the thinnest, strain-coherent films, the response…
Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they exhibit wrinkling. The formation of wrinkles is a key signature of strain distribution in a film. Raman imaging has been utilized to study the residual strain distribution in these wrinkled hBN films. A…
We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm predicted by continuous medium theory whereas the tetragonal distortion does not change. We resolve this apparent contradiction using first-principles-based effective Hamiltonian calculations. In ultra thin films the energetics of near open circuit electrical boundary conditions, i.e. unscreened depolarizing field, drive the system through a phase transition fro…
We present a synthesis/processing method for fabricating ferrimagnetic insulator (Bi-doped yttrium iron garnet) thin films with tunable magnetic anisotropy. Since the desired magnetic properties rely on controllable thickness and successful doping, we pay attention to the entire synthesis/processing procedure (nanopowder synthesis, nanocrystalline target preparation and pulsed laser deposition (PLD)). Atomically flat films were deposited by PLD on (111)-orientated yttrium aluminum garnet. We show a significant enhancement of perpendicular anisotropy in the films, caused by strain-induced aniso…
We investigate the effects of strain on a crystal surface close to the bulk melting temperature T_m, where surface melting usually sets in. Strain lowers the bulk melting point, so that at a fixed temperature below but close to T_m the thickness of the quasi-liquid film is expected to grow with strain, irrespective of sign. In addition, a strain-induced solid surface free energy increase/decrease takes place, favoring/disfavoring surface melting depending on the sign of strain relative to surface stress. In the latter case one can produce a strain-induced prewetting transition, where for incre…
We study the formation and evolution of coherent islands on lattice mismatched epitaxially strained films. Faceted islands form in films with aniostropic surface tension. Under annealing, these islands ripen until a stable array is formed, with an island density which increases with film thickness. Under deposition, an island shape transition occurs, which leads to a bimodal island size distribution. In films with isotropic surface tension we observe continual ripening of islands above a certain film thickness. A stable wavy morphology is found in thinner films.
We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the edge of PdTe$_2$ domains, and anisotropic strain distributions throughout the Moiré supercell with a net change in lattice strain up to ~2.9%. Our DFT calculations show that this strain effect leads t…
Ferromagnetic insulating La$_2$CoMnO$_{6-ε}$ (LCMO) epitaxial thin films grown on top of SrTiO$_3$ (001) substrates presents a strong magnetic anisotropy favoring the out of plane orientation of the magnetization with a strong anisotropy field ($\sim 70$ kOe for film thickness of about 15 nm) and with a coercive field of about 10 kOe. The anisotropy can be tuned by modifying the oxygen content of the film which indirectly has two effects on the unit cell: i) change of the orientation of the LCMO crystallographic axis over the substrate (from c in-plane to c out-of-plane) and ii) shrinkage of t…
We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are ferroelectric with a polarization along c-axis switchable by 90 degrees by an external magnetic field. When reducing film thickness and increasing epitaxial strain, the ferroelectric order is progressively suppressed. Analysis of structural, dielectric and magnetic data indicates that suppression of ferroelectricity when reducing thickness is accompanied by an enla…
Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism (XMCD) at the Ru M2,3 edge. Results have shown that, with decreasing film thickness, the film changes from ferromagnetic to non-magnetic around 3monolayer thickness, consistent with previous magnetization and magneto-optical Kerr eff…
Multiferroic BiFeO3 epitaxial films with thickness ranging from 40 nm to 960 nm were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. X-ray characterization shows that the structure evolves from angularly-distorted tetragonal with c/a ~ 1.04 to more bulk-like distorted rhombohedral (c/a ~ 1.01) as the strain relaxes with increasing thickness. Despite this significant structural evolution, the ferroelectric polarization along the body diagonal of the distorted pseudo-cubic unit cells, as calculated from measurements along the normal direction, barely ch…
The self-polarization of PbZr0.52Ti0.48O3 thin film is switched by changing film thickness through the competition between the strain relaxation-induced flexoelectric fields and the interfacial effects. Without an applied electric field, this reversal of self-polarization is exploited to control the magnetic properties of La0.67Sr0.33MnO3 by the competition/cooperation between the charge-mediated and the strain-mediated effects. Scanning transmission electron microscopy, polarized near edge x-ray absorption spectroscopy, and half-integer diffraction measurements are employed to decode this int…
Layered perovskite La2CuO4+delta(LCO) thin films were epitaxially grown on SrTiO3 (STO) and LaSrAlO4 (LSAO) substrates by atomic-layer-by-layer molecular beam epitaxy. The lattice de-fects and residual strain in these films were investigated by means of transmission electron mi-croscopy and electron energy loss spectroscopy. The LCO films showed a high epitaxial quality with flat interfaces and top surfaces. Misfit dislocations with Burgers vector a<010> and shear defects were frequently observed at or near the film/substrate interfaces and in the films, respec-tively, for all the LCO films. I…
High quality epitaxial thin-films of EuTiO3 have been grown on the (001) surface of SrTiO3 using pulsed laser deposition. In situ x-ray reflectivity measurements reveal that the growth is two-dimensional and enable real-time monitoring of the film thickness and roughness during growth. The film thickness, surface mosaic, surface roughness, and strain were characterized in detail using ex situ x-ray diffraction. The thicnkess and composition were confirmed with Rutherford Backscattering. The EuTiO3 films grow two-dimensionally, epitaxially, pseudomorphically, with no measurable in-plane lattice…
We investigate the influence of a well-defined reversible biaxial strain <=0.12 % on the magnetization (M) of epitaxial ferromagnetic manganite films. M has been recorded depending on temperature, strain and magnetic field in 20 - 50 nm thick films. This is accomplished by reversibly compressing the isotropic in-plane lattice parameter of the rhombohedral piezoelectric 0.72PMN-0.28PT (001) substrates by application of an electric field E <= 12 kV cm-1. The magnitude of the total variable in-plane strain has been derived. Strain-induced shifts of the ferromagnetic Curie temperature (Tc) of up t…
Crystal and domain structures of tensile-strained BiFeO3 films grown on orthorhombic (110)o PrScO3 substrates were investigated. All films possess a MB-type monoclinic structure with 109o stripe domains oriented along the [ī10]o direction. For films thicknesses less than ~40 nm, presence of well-ordered domains is proved by the detection of satellite peaks in synchrotron x-ray diffraction studies. For thicker films, For thicker films, only the Bragg reflections from tilted domains were detected. This is attributed to the broader domain size distribution in thicker films.Using planar electrodes…
