A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of individual switching processes, and their activation fields. Complementary, the phenomenological Landau-Ginzburg-Devenshire theory is used to analyze the impact of external field and stress on switching barriers showing that residual mechanical stress may promote the fast switching.
Using first principle calculations under the framework of density functional theory we have investigated the electronic structure, magnetism and ferroelectric polarization in the triangular lattice antiferromagnet AgFeO2, and its comparison to the isostructural system CuFeO2. Our calculations reveal that spin orbit interaction plays an important role in determining the magnetic property of AgFeO2 and is possibly responsible for its different magnetic ground state in comparison to CuFeO2. Calculations of ferroelectric polarization of AgFeO2 suggest that the spontaneous polarization arises from …
Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal that the (111)-oriented ZrO2 films are under epitaxial compressive strain and display a switchable ferroelectric polarization of about 20.2 μC/cm2 with a coerc…
In this work we analyze the finite-size effects on the structural properties and on the polarization of the rhombohedral phase of HfO$_2$ subjected to a biaxial compressive strain. We show how the presence of surface charges affects the polarization, leading to a strong reduction with respect to its bulk value. This reduction can be ascribed to two mechanisms: the coupling between compressive strain and the phase-transition order parameter; the changes in the ferroelectric distortion. We give two alternative explanations of this phenomenon: from an atomistic point of view, analyzing the evolut…
Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for doping and strain engineering to increase the thickness in epitaxial thin films. Based on surface energy considerations supported by ab initio calculations, we show that a pure ZrO2 epitaxial thin film exhibits a ferroelectric rhombohedral phase (r-phase, with R3m space group) more stable than for the Hf0.5Zr0.5O2 (HZO) and pure HfO2 cases. In particular, for a thickness up to 37 nm we experimentally evidence a single…
The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest switchable ferroelectricity at room-temperature. Based on the diffusion limited aggregation theory, such MoS2 patterns are formed under the low Mo chemical potential and low temperature with respect …
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, whic…
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the emergence of ferroelectricity in the [111]-oriented Hf0.5Zr0.5O2 thin films, but the fundamental mechanism of ferroelectric polarization in such films remains poorly understood. In this paper, we employ density-functional-theory calculations to investigate structural and polarization properties of the R3m HfO2 phase. We find that the film thickness and in-plane c…
Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer-thick, semiconductor 2D ferroelectrics, where the individual constituents are well-studied non-ferroelectric monolayer transition …
The presence of a space charge region induces an internal electric field within the charged region that, in a ferroelectric material, would rotate the polarisations to align with the field. The strength of the induced field would therefore determine the domain patterns and polarisation switching properties of the material. Using a phase-field model, we investigate the effect of charged layers in fully and partially depleted BiFeO$_3$ thin films in the rhombohedral phase. While the domain pattern in a charge-free BiFeO$_3$ film consists of only two polarisation variants, we observe complex patt…
GeTe is a well-known ferroelectric and thermoelectric material that undergoes a structural phase transition from a rhombohedral to the rocksalt structure at $\sim 600-700$ K. We present a first principles approach to calculate the thermal expansion of GeTe in the rhombohedral phase up to the Curie temperature. We find the minimum of the Helmholtz free energy with respect to each structural parameter in a manner similar to the traditional Gr{ü}neisen theory, and account for the temperature dependence of elastic constants. We obtain the temperature variation of the structural parameters of rhomb…
We report on theoretical and experimental investigation of A-site driven ferroelectricity in ferromagnetic La2NiMnO6 thin films grown on SrTiO3 substrates. Structural analysis and density functional theory calculations show that epitaxial strain stretches the rhombohedral La2NiMnO6 crystal lattice along the [111]cubic direction, triggering a displacement of the A-site La ions in the double perovskite lattice. The lattice distortion and the A-site displacements stabilize a ferroelectric polar state in ferromagnetic La2NiMnO6 crystals. The ferroelectric state only appears in the rhombohedral La2…
Epitaxial Growth and Electronic Properties of QuasiFreeStanding Rhombohedral WSe2 Bilayers on Cubic W110
Université Paris-Saclay（巴黎萨克雷大学）；CNRS, Centre de Nanosciences et de Nanotechnologies（法国国家科学研究中心，纳米科学与技术中心）；Thales Research & Technology (TRT)（泰雷兹研究与技术）；Université de Toulouse, INSA-CNRS-UPS, LPCNO（图卢兹大学，INSA-CNRS-UPS，LPCNO）；Synchrotron SOLEIL（索莱尔同步辐射中心）
We report the Pockels electro-optic properties of ZrO2 and HfO2 orthorhombic Pbc21 and rhombohedral R3m ferroelectric phases, and we compare them to the well-known LiNbO3 Pockels material from density functional theory calculations using the CRYSTAL suite of programs. Specifically, three essential processes are explicitly investigated: The electronic, the ionic (or vibrational), and the piezoelectric contributions. Our calculations reveal that the ionic part coming from the low frequency phonon modes contributes the most to the electro-optic coefficients of rhombohedral LiNbO3 and of orthorhom…
The ability to manipulate ferroelectrics at ultrafast speeds has long been an elusive target for materials research. Coherently exciting the ferroelectric mode with ultrashort optical pulses holds the promise to switch the ferroelectric polarization on femtosecond timescale, two orders of magnitude faster compared to what is possible today with pulsed electric fields. Here, we report on the demonstration of ultrafast optical reversal of the ferroelectric polarization in LiNbO3. Rather than driving the ferroelectric mode directly, we couple to it indirectly by resonant excitation of an auxiliar…
Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of $180^{\circ}$ domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientatio…
It has recently been shown that the polarization of a ferroelectric can be strongly affected by light pumping or even transiently reversed by mid-IR pumping within a record short subpicosecond timescale. It was then suggested that the reversal of polarization is most likely prevented by the depolarizing field that appears during the process. To minimize the effect of the depolarizing field, I propose to create an elongated domain by choosing a corresponding pump spot shape. I calculate the polarization dynamics for a particular experimental setup with mid-IR pumping and show that the polarizat…
A stochastic model of electric field-driven polarization reversal in orthorhombic ferroelectrics is advanced, providing a description of their temporal electromechanical response. The theory accounts for all possible parallel and sequential switching events. Application of the model to the simultaneous measurements of polarization and strain kinetics in a lead-free orthorhombic (K,Na)NbO3-based ferroelectric ceramic over a wide timescale of 7 orders of magnitude allowed identification of preferable polarization switching paths, fractions of individual switching processes, and their activation …
We calculate the ferroelectric polarization dynamics induced by a femtosecond midinfrared pulse as measured in the recent experiment by R. Mankowsky et al., Phys. Rev. Lett. 118, 197601 (2017). It is due to the nonlinear coupling of the excited infrared-active phonon with the ferroelectric mode or to the excitation of the ferroelectric mode itself depending on the pulse frequency. To begin with, we write the LiNbO$_3$ crystal symmetry invariant thermodynamic potential including electric field and nonlinear phonon coupling terms. We solve the equations of motion determined by this potential for…
Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions formation energy value on the polarization states and polarization reversal mechanisms, domain structure and corresponding phase diagrams of ferroelectric thin films. Using 3D finite elements modeling we analyze the distribution and hysteresis loops of ferroelectric polarization and ionic charge, and dynamics of the domain states. These calculations performed o…
Using first-principles calculations, we estimated the impact of large applied electric E fields on the structural, dielectric, and ferroelectric properties of typical ferroelectrics. At large fields, the structural parameters change significantly, decreasing the strain between the different structural phases. This effect favours a polarization rotation model for ferroelectric switching in which the electronic polarization rotates between the directions of tetragonal, rhombohedral and orthorhombic phases. We estimate coercive fields E_c ~31 MV/m and ~52 MV/m at zero temperature for bulk ferroel…
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polarization reversal. Unconventional ferroelectric switching in $ε$-Fe2O3 films, a material that combines ferrimagnetism and ferroelectricity at room temperature, is reported here. High-resolution in-situ…
Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
Harbin Institute of Technology, Shenzhen（哈尔滨工业大学（深圳））；Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area（粤港澳大湾区量子科学中心）；Westlake University（西湖大学）；Indian Institute of Science（印度科学学院）；University of Science and Technology Beijing（北京科技大学）
Eu modified Na1/2Bi1/2TiO3 (NBT) was investigated for electric-field induced Eu+3 photoluminescence (PL) and structural changes. Detailed analysis revealed that below a critical Eu composition electric field irreversibly suppresses the structural heterogeneity inherent of the host matrix NBT and brings about a long range ferroelectric state with rhombohedral (R3c) distortion. PL study revealed that structural disorder on the nano-scale opens new channels of radiative transitions which can be suppressed by electric field. This study suggests that Eu+3 luminescence can be used to probe the relat…
BiFeO$_3$ is the most famous multiferroic material, but it has no strong spontaneous magnetization due to its antiferromagnetism. Here we show that giant ferroelectric polarization and strong spontaneous magnetization can be both realized in double perovskite Bi$_2$FeMoO$_6$ with R3 (\#146) space group based on BiFeO$_3$. Our first-principles phonon spectra establishes that this multiferroic R3 phase is stable. Our systematic calculations show that it is a spin-polarized semiconductor with gap reaching to 0.54 eV and has a strong ferroelectric polarization of 85$μ$C/cm$^2$. This ferroelctricit…
Short-range polar orders in the relaxor ferroelectric material PbMg$_{1/3}$Nb$_{2/3}$O$_3$-$28\%$PbTiO$_3$ (PMN-28PT) have been studied using neutron diffuse scattering. An external electric field along [110] direction can affect the diffuse scattering in the low temperature rhombohedral/monoclinic phase. Diffuse scattering intensities associated with [110] short-range polarizations are partially suppressed, while those arising from [1$\bar{1}$0] polarizations are enhanced. On the other hand, short-range polar orders along other equivalent $\langle110\rangle$ directions, i.e. [101],[10$\bar{1}…
The impact of flexoelectric coupling on polarization reversal kinetics and space charge dynamics in thin films of ferroelectric-semiconductors has been theoretically studied. The relaxation-type Landau-Khalatnikov equation together with the Poisson equation and the theory of elasticity equations have been used to calculate in a self-consistent way the spatial-temporal development of ferroelectric polarization, electric potential and space charge, elastic stresses, strains and their gradients. The analysis of the obtained results reveals a moderate increase of the flexocoupling influence on the…
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work we investigate the influence of pinned magnetic domain walls on the magnetization reversal process in a Co40Fe40B20 wedge film that is coupled to a ferroelectric BaTiO3 substrate via interface strain transfer. We show that the magnetic field direction can be used to select between two distinct magnetization reversal mechanisms, namely (1) double switching ev…
The discovery of stable room temperature ferroelectricity in Croconic Acid, an organic ferroelectric material, with polarization values on par with those found in inorganic ferroelectric materials and highest among organic ferroelectric materials, has opened up possibilities to realize myriads of nano-electronic and spintronic devices based on organic ferroelectrics. Such possibilities require an adequate understanding of the ferroelectric properties of Croconic Acid grown on surfaces that are commonly employed in device fabrication. While several macroscopic studies on relatively larger cryst…
