Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal that the (111)-oriented ZrO2 films are under epitaxial compressive strain and display a switchable ferroelectric polarization of about 20.2 μC/cm2 with a coercive field of 1.5 MV/cm. Moreover, the time dependent polarization reversal characteristics of Nb:STO/ZrO2/Au film capacitors exhibit bell-shape curves, a typical feature of ferroelectric films associated with domains reversal. The estimated activation field is comparable to the coercive field obtained from polarization-electric field hysteresis loops. Interestingly, the studied films show ferroelectric behavior per se, i.e., there is no need to apply the wake-up cycle that is essential to induce ferroelectricity in the conventional (orthorhombic) ferroelectric phase of ZrO2. Therefore, the present films have a technologically advantage over the previously studied ferroelectric ZrO2 films, and may be attractive for nanoscale ferroelectric devices.
Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of experimentally accessible epitaxial strains -3% < η< 4%. While ferroelectricity is favored for all compressive strains, for tensile strains the small energy difference between the nonpolar ground state and the alternative polar phase yields a robust antiferroelectric ground state. The coexistence of ferroelectricity and antiferroelectricity observed in thin fil…
The structure and polarization of the as-yet hypothetical Ruddlesden-Popper compound Pb$_2$TiO$_4$ are investigated within density-functional theory. Zone enter phonons of the high-symmetry K$_2$NiF$_4$-type reference structure, space group $I4/mmm$, were calculated. At the theoretical ground-state lattice constants, there is one unstable infrared-active phonon. This phonon freezes in to give the $I2mm$ ferroelectric state. As a function of epitaxial strain, two additional ferroelectric phases are found, with space groups $I4mm$ and $F2mm$ at compressive and tensile strains, respectively.
We use first principles density functional theory calculations to investigate the effect of biaxial strain in the low-temperature structural and ferroelectric properties of [111]-oriented SrTiO$_3$. We find that [111] biaxial strain, achievable by coherent epitaxial growth along the [111] direction, induces structural distortions in SrTiO$_3$ that are not present in either bulk or [001]-oriented SrTiO$_3$. Under [111] biaxial strain, SrTiO$_3$ displays ferroelectricity at tensile strain, and paraelectricity at compressive strain. We compute the phonon spectrum and macroscopic polarization of S…
The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest switchable ferroelectricity at room-temperature. Based on the diffusion limited aggregation theory, such MoS2 patterns are formed under the low Mo chemical potential and low temperature with respect …
In this work we analyze the finite-size effects on the structural properties and on the polarization of the rhombohedral phase of HfO$_2$ subjected to a biaxial compressive strain. We show how the presence of surface charges affects the polarization, leading to a strong reduction with respect to its bulk value. This reduction can be ascribed to two mechanisms: the coupling between compressive strain and the phase-transition order parameter; the changes in the ferroelectric distortion. We give two alternative explanations of this phenomenon: from an atomistic point of view, analyzing the evolut…
First principles calculations based on the density functional theory within the local spin density approximation plus U(LSDA+U)scheme, show rhombohedral Bi$_2$FeTiO$_6$ is a potential multiferroic in which the magnetism and ferroelectricity coexist . A ferromagnetic configuration with magnetic moment of 4 $μ_B$ per formula unit have been reported with respect to the minimum total energy. Spontaneous polarization of 27.3 $μ$ C/cm$^2$, caused mainly by the ferroelectric distortions of Ti, was evaluated using the berry phase approach in the modern theory of polarization. The Bi-6s stereochemical …
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, whic…
High-temperature electronic materials are in constant demand as the required operational range for various industries increases. Here we design $(A,A^\prime)B_2$O$_6$ perovskite oxides with [111] ``rock salt" $A$-site cation order and predict them to be potential high-temperature piezoelectric materials. By selecting bulk perovskites which have a tendency towards only out-of-phase $B$O$_6$ rotations, we avoid possible staggered ferroelectric to paraelectric phase transitions while also retaining non-centrosymmetric crystal structures necessary for ferro- and piezoelectricity. Using density fun…
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the emergence of ferroelectricity in the [111]-oriented Hf0.5Zr0.5O2 thin films, but the fundamental mechanism of ferroelectric polarization in such films remains poorly understood. In this paper, we employ density-functional-theory calculations to investigate structural and polarization properties of the R3m HfO2 phase. We find that the film thickness and in-plane c…
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading towards identifying comprehensive global trends for stabilizing r-phase polymo…
We report on theoretical and experimental investigation of A-site driven ferroelectricity in ferromagnetic La2NiMnO6 thin films grown on SrTiO3 substrates. Structural analysis and density functional theory calculations show that epitaxial strain stretches the rhombohedral La2NiMnO6 crystal lattice along the [111]cubic direction, triggering a displacement of the A-site La ions in the double perovskite lattice. The lattice distortion and the A-site displacements stabilize a ferroelectric polar state in ferromagnetic La2NiMnO6 crystals. The ferroelectric state only appears in the rhombohedral La2…
We performed first principles calculations for epitaxially strained orthorhombic CaTiO$_3$. The computational results reveal the existence of a metastable ferroelectric phase at compressive strain with unexpected in-plane polarization. Symmetry analysis indicates that two distortion modes at the X point combine to induce the polarization, leading to characterization as a hybrid improper ferroelectric. Our work demonstrates a mechanism for improper ferroelectricity in simple perovskites without the need for symmetry lowering by layering or cation ordering.
Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer-thick, semiconductor 2D ferroelectrics, where the individual constituents are well-studied non-ferroelectric monolayer transition …
Using first-principles density functional theory calculations, we discover an anomalously large bi-axial strain-induced octahedral rotation axis reorientation in orthorhombic perovskites with tendency towards rhombohedral symmetry. The transition between crystallographically equivalent (isosymmetric) structures with different octahedral rotation magnitudes originates from strong strain--octahedral rotation coupling available to perovskites and the energetic hierarchy among competing octahedral tilt patterns. By elucidating these criteria, we suggest many functional perovskites would exhibit th…
Phase evolution in (Ag1-xLix)NbO3 (ALN) solid solution was investigated by X-ray diffraction technique, dielectric and polarization measurements. It is shown that small substitution of Ag with Li gives rise to an orthorhombic-rhombohedral structural transformation in ABO3-perovskite silver niobate at room temperature. Structural refinements indicate that both A- and B-site displacements contribute to the spontaneous polarization of the ferroelectric phase with symmetry R3c. Increasing Li-concentration enhances the ferroelectric rhombohedral distortion, resulting in the increase of the para-fer…
Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Mi…
Epitaxially strained LaCoO3 (LCO) thin films were grown with different film thickness, t, on (001) oriented (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates. After initial pseudomorphic growth the films start to relieve their strain partly by the formation of periodic nano-twins with twin planes predominantly along the <100> direction. Nano-twinning occurs already at the initial stage of growth, albeit in a more moderate way. Pseudomorphic grains, on the other hand, still grow up to a thickness of at least several tenths of nanometers. The twinning is attributed to the symmetry lowering of the…
The anisotropic optical properties of multiferroic BiFeO$_3$ thin films have been determined with Mueller matrix ellipsometry at room-temperature. The full dielectric tensors of tetragonal-like and rhombohedral-like BiFeO$_3$ phases epitaxially grown on LaAlO$_3$ and SrTiO$_3$ single crystal substrates, respectively, within the spectral range of 0.6 and 6.5 eV are reported. Strain-driven anisotropy changes and transition shifts are observed as well as evidence of sub-band gap many-particle excitations are found. The transition shifts, mostly to higher energies for the highly strained tetragona…
We fabricated epitaxial thin films of hexagonal DyMnO3, which otherwise form in a bulk perovskite structure, via deposition on Pt(111)//Al2O3 (0001) and YSZ(111) substrates: each of which has in-plane hexagonal symmetry. The polarization hysteresis loop demonstrated the existence of ferroelectricity in our hexagonal DyMnO3 films at least below 70 K. The observed 2.2 uC/cm^2 remnant polarization at 25 K corresponded to a polarization enhancement by a factor of 10 compared to that of the bulk orthorhombic DyMnO3. Interestingly, this system showed an antiferroelectric-like feature in its hysteres…
We use density-functional theory with the local-density approximation to study the structural and ferroelectric properties of SrTiO$_3$ under misfit strains. Both the antiferrodistortive (AFD) and ferroelectric (FE) instabilities are considered. The rotation of the oxygen octahedra and the movement of the atoms are fully relaxed within the constraint of a fixed in-plane lattice constant. We find a rich misfit strain-induced phase transition sequence and is obtained only when the AFD distortion is taken into account. We also find that compressive misfit strains induce ferroelectricity in the te…
The Jahn-Teller effect refers to the symmetry-lowering geometrical distortion in a crystal (or non-linear molecule) due to the presence of a degenerate electronic state. Usually, the Jahn-Teller distortion is not polar. Recently, GaV4S8 with the lacunar spinel structure was found to undergoes a Jahn-Teller distortion from cubic to ferroelectric rhombohedral structure at TJT = 38K. In this work, we carry out a general group theory analysis to show how and when the Jahn-Teller effect gives rise to ferroelectricity. On the basis of this theory, we find that the ferroelectric Jahn-Teller distort i…
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement conditions, and in multiple samples. The measured coercive field values are Ec~0.7 MV/cm at room temperature, with remnant polarization Pr~10 μC/cm2 for ~100 nm thick ScAlN layers. These values are sub…
Here, we report the existence of large remnant polarization and dielectric constant in PbTiO3 buffered polycrystalline (BiFeO_3)_{1-x} (PbTiO_3)_x thin films of composition x = 0.25, 0.30 and 0.35 around the morphotropic phase boundary. The films were deposited by chemical solution deposition on platinized silicon substrates. Films reveal a perovskite structure with a tendency to retain rhombohedral structure even at higher PbTiO_3 content than that reported in bulk. We observe very large remnant polarization, ~75 microC/cm^2, and high dielectric constant, ~2400 at 1 kHz for x = 0.3, which lie…
It has been recently suggested that the coexistence of ferroelectricity and Rashba-like spin-splitting effects due to spin-orbit coupling in a single material may allow for a non-volatile electric control of spin degrees of freedom. In the present work, we compared the structural and ferroelectric properties of tetragonal and rhombohedral phases of ferroelectric BiAlO$_3$ by means of density-functional calculations. In both phases, we carefully investigated Rashba and Dresselhaus effects, giving rise to spin-splitting in their bulk electronic structure, particularly near the conduction band mi…
BiFeO3 thin films with various thicknesses were grown epitaxially on (001) LaSrAlO4 single crystal substrates using pulsed laser deposition. High resolution x-ray diffraction measurements revealed that a tetragonal-like phase with c-lattice constant ~4.65 Å is stabilized by a large misfit strain. Besides, a rhombohedral-like phase with c-lattice constant ~3.99 Å was also detected at film thickness of ~50 nm and above to relieve large misfit strains. In-plane piezoelectric force microscopy studies showed clear signals and self-assembled nanoscale stripe domain structure for the tetragonal-like …
We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on non-orthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, an…
We report the structural and physical properties of epitaxial Bi2FeCrO6 thin films on epitaxial SrRuO3 grown on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The 300 nm thick films exhibit both ferroelectricity and magnetism at room temperature with a maximum dielectric polarization of 2.8 microC/cm2 at Emax = 82 kV/cm and a saturated magnetization of 20 emu/cc (corresponding to ~ 0.26 Bohr magneton per rhombohedral unit cell), with coercive fields below 100 Oe. Our results confirm the predictions made using ab-initio calculations about the existence of multiferroic properties in …
We present results from ab initio calculations based on density functional theory for bismuth-based double perovskite Bi2MnTiO6. Using total energy calculation with stress and force minimization we have predicted the equilibrium crystal structure for Bi2MnTiO6 considering potential structures into the calculation. We have predicted that the ground state of Bi2MnTiO6 will be a noncentrosymmetric rhombohedral structure with space group R3c. Our spin polarized calculation for different possible collinear magnetic configurations we found that Bi2MnTiO6 will be an insulator with G-type antiferromag…
Layered perovskite La2CuO4+delta(LCO) thin films were epitaxially grown on SrTiO3 (STO) and LaSrAlO4 (LSAO) substrates by atomic-layer-by-layer molecular beam epitaxy. The lattice de-fects and residual strain in these films were investigated by means of transmission electron mi-croscopy and electron energy loss spectroscopy. The LCO films showed a high epitaxial quality with flat interfaces and top surfaces. Misfit dislocations with Burgers vector a<010> and shear defects were frequently observed at or near the film/substrate interfaces and in the films, respec-tively, for all the LCO films. I…
BiFeO$_3$ thin films can be epitaxially stabilized in a nearly-tetragonal phase under a high biaxial compressive strain. Here we investigate the polarized Raman spectra of constrained BiFeO$_3$ films with tetragonal-like (BFO-T), rhombohedral-like (BFO-R) and multiphase (BFO-T+R) structure. Based on analysis of the number and symmetry of the Raman lines, we provide strong experimental evidence that the nearly-tetragonal films are monoclinic ($Cc$ symmetry) and not tetragonal $(P4mm)$. Through the Raman mapping technique we show localized coexistence of BFO-T and BFO-R phases with the relative …
Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx under ballistic conditions. On Si (111), polar rhombohedral (r)-phase and bulk monoclinic (m-) phase coexist, with the volume of the former increasing with increasing Zr concentration. R-phase is stabil…
Investigating the Electromechanical Behavior of Unconventionally Ferroelectric $Hf_{0.5}Zr_{0.5}O_{2}$-based Capacitors Through Operando Nanobeam X-ray Diffraction
