Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coercive fields and saturation polarization persist in literature for many materials. This raises questions about the atomic-scale mechanisms behind polarization reversal. Unconventional ferroelectric switching in $ε$-Fe2O3 films, a material that combines ferrimagnetism and ferroelectricity at room temperature, is reported here. High-resolution in-situ scanning transmission electron microscopy (STEM) experiments and first-principles calculations demonstrate that polarization reversal in $ε$-Fe2O3 occurs around pre-existing domain walls only, triggering local domain wall motion in moderate electric fields of 250 - 500 kV/cm. Calculations indicate that the activation barrier for switching at domain walls is nearly a quarter of that corresponding to the most likely transition paths inside $ε$-Fe2O3 domains. Moreover, domain walls provide symmetry lowering, which is shown to be necessary for ferroelectric switching. Local polarization reversal in $ε$-Fe2O3 limits the macroscopic ferroelectric response and offers important hints on how to tailor ferroelectric properties by domain structure design in other relevant ferroelectric materials.
In this contribution to the special issue on magnetoelectrics and their applications, we focus on some single phase multiferroics theoretically predicted and/or experimentally discovered by the authors in recent years. In these materials, iron is the common core element. However, these materials are conceptually different from the mostly-studied BiFeO$_3$, since their ferroelectricity is improper. Our reviewed materials are not simply repeating one magnetoelectric mechanism, but cover multiple branches of improper ferroelectricity, including the magnetism-driven ferroelectrics, geometric ferro…
We have investigated the field-induced-changes in both the magnetization and the polarization in ferromagnet/Insulator/ferroelectric (FM/I/FE) multilayer by following both the Stoner-Wohlfarth (SW) model and the Landau theory. It has been found that with the stresses introduced in the FM/I/FE structure by the fields, both the magnetization and the polarization states can be significantly modified and the combination of their states can be of multiple states. These results demonstrate the feasibility of combining both the spintronics and the ferroelectrics into the multiferroictronics.
We show the first-principles evidence of a hitherto unreported type of ferroelectricity with ultra-long ion-displacement in sodium and potassium hydroxides. Even a small amount of proton vacancies can completely change the mode of proton-transfer from intra-unitcell to trans-unitcell, giving rise to multiferroic soliton with mobile magnetism and a tremendous polarization that can be orders of magnitude higher compared with most perovskite ferroelectrics. Their vertical polarizations of thin-film are robust against depolarizing field, rendering various designs of 2D ferroelectric field-transist…
Oxyhydroxide minerals like FeOOH have been a research focus in geology for studying the Earth interior, and also in chemistry for studying oxygen electrocatalysis activity. In this paper we provide first-principles evidence of a new class of ferroelectrics or multiferroics among them:GaOOH,InOOH,CrOOH,FeOOH, which are earth-abundant minerals and have been experimentally verified to possess distorted rutile structures, are ferroelectric with considerable polarizations(up to 24 muC/cm2) and piezoelectric coefficients. Their atomic-thick layer may possess vertical polarization robust against depo…
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO3 is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and ferromagnetic domains walls. Their distinct dynamics are essential for the observed magnetic switching.
We have identified, for the first time, the change in symmetry at the ferroelectric transition TFE near 1023K of the ferroelectromagnet YMnO3. This transition takes place 300K below the transition to the centrosymmetric state at TIP. Single crystal synchrotron diffraction coupled to a group theoretical analysis show that the paraelectric intermediate phase between TIP and TFE has P63/mcm symmetry. This proves that YMnO3 is a proper ferroelectric and not an improper ferroelectric, as suggested by a previous group theoretical assignment. The origin of the ferroelectricity is caused by a correlat…
Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently, mechanical force has attracted great attention in switching of ferroic ordering parameters via electro-elastic coupling in ferroelectric materials. In this work, mechanical force induced polarization and magnetization switching were investigated in a polycrystalline multiferroic Bi0.9La0.1FeO3 thin film using a scanning probe microscopy system. The piezorespon…
Pyro-current measurements have been widely used to study ferroelectric properties in multiferroic materials. However, determination of intrinsic polarization by this method is not straightforward because of leakage current and trapped charge carriers. Here, we demonstrate the formation of internal electric field due to thermally stimulated charge carriers and its influence on ferroelectric polarization in a polycrystalline sample of the well known multiferroic TbMnO$_3$. While an electric field ($E_{ext}$) poling across the ferroelectric transition ($T_C$ $\sim$ 26 K) is essential to obtain de…
Nowdays, multiferroic materials with magnetoelectric coupling have many real-world applications in the fields of novel memory devices. It is challenging is to create multiferroic materials with strongly coupled ferroelectric and ferrimagnetic orderings at room temperature. The single crystal of ferric selenide (Fe3Se4) shows type-II multiferroic due to the coexistence of ferroelectric as well as magnetic ordering at room temperature. We have investigated the lattice instability, electronic structure, ferroelectric, ferrimagnetic ordering and transport properties of ferroelectric metal Fe3Se4. …
We investigate the crystal structure in multiferroic tetragonal perovskite Sr$_{1/2}$Ba$_{1/2}$MnO$_3$ with high accuracy of the order of 10$^{-3}$ Angstrom for an atomic displacement. The large atomic displacement for Mn ion from the centerosymmetric position, comparable with the off-centering distortion in the tetragonal ferroelectric BaTiO$_3$, is observed in the ferroelectric phase ($T_\mathrm{N}$ $\leq$ $T$ $\leq$ $T_\mathrm{C}$). In stark contrast, in the multiferroic phase ($T$ $\leq$ $T_\mathrm{N}$), the atomic displacement for Mn ion is suppressed, but those for O ions are enlarged. T…
By means of first-principles simulations, we unambiguously show that improper ferroelectricity in magnetite in the low-temperature insulating phase is driven by charge-ordering. An accurate comparison between monoclinic ferroelectric Cc and paraelectric P2/c structures shows that the polarization arises because of "shifts" of electronic charge between octahedral Fe sites, leading to a non-centrosymmetric Fe2+/Fe3+ charge-ordered pattern. Our predicted values for polarization, in good agreement with available experimental values, are discussed in terms of point-charge dipoles located on selecte…
The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-…
Two-dimensional ferroelectrics are important quantum materials which have found novel application in nonvolatile memories, however, the effects of reversible polarization on chemical reactions and interaction with environments are rarely studied despite of its importance. Here, based on the first-principles calculations, we found distinct gas adsorption behaviors on the surfaces of ferroelectric In2Se3 layer and the reversible gas caption and release controlled by ferroelectric switch. We rationalize the novel phenomena to the synergistic effect of the different electrostatic potential and ele…
The multiferroic behavior of the hypothetical Aurivillius compound Bi4Mn3O12 has been explored on the basis of density functional calculations. We find that the tetragonal paraelectric phase of this material is ferromagnetic, showing ferroelectric and antiferrodistortive instabilities similar to the ones observed in its ferroelectric parent compound Bi4Ti3O12 . Our results indicate, however, that the presence of Mn+4 ions at the B-sites shrinks the cell volume and consequently the unstable polar mode, associated with the ferroelectric polarization, is overcame by an antiferrodistortive distort…
Ferroelectric and multiferroic materials form an important class of functional materials. Over the last twenty years, first-principles-based effective Hamiltonian approaches have been successfully developed to simulate these materials. In recent years, effective Hamiltonian approaches were further combined with molecular dynamics methods to investigate terahertz dynamical properties of various perovskites. With this combination, a variety of ferroelectric and multiferroic materials, including BaTiO_{3}, Ba(Sr,Ti)O_{3}, Pb(Zr,Ti)O_{3}, BiFeO_{3}, and SrTiO_{3} bulks and films have been simulate…
Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of …
Low-dimensional multiferroicity, though highly scarce in nature, has attracted great attention due to both fundamental and technological interests. Using first-principles density functional theory, we show that ferromagnetism and ferroelectricity can coexist in monolayer transition metal phosphorus chalcogenides (TMPCs) - CuMP$_2$X$_6$ (M=Cr, V; X=S, Se). These van der Waals layered materials represent a class of 2D multiferroic semiconductors that simultaneously possess ferroelectric and ferromagnetic orders. In these monolayer materials, Cu atoms spontaneously move away from the center atomi…
Multiferroicity can be induced in strontium titanate by applying biaxial strain, resulting in the coexistence of both ferroelectric and antiferrodistortive domains. The magnitude and sign of the strain imposed on the lattice by design can be used to tune the phase transitions and interactions between these two phenomena. Using optical second harmonic generation, we report a transition from centrosymmetric 4/mmm phase to ferroelectric mm2, followed by an antiferrodistortive transition to a coupled ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film strained in biaxial tension…
Based on ab initio density functional theory, we have investigated a microscopic mechanism that leads to Fe$^{2+}_{B}$/Fe$^{3+}_{B}$ dimerization and consequent ferroelectricity in charge ordered Fe$_{3}$O$_{4}$ with $P2$ symmetry. In addition to the simple inter-site Coulomb repulsion, quantum hybridization effects are invoked to explain the Fe$^{2+}_{B}$/Fe$^{3+}_{B}$ bond dimerization. Our results, based on the generalized gradient approximation + Hubbard $U$ (GGA+$U$) method, indicate that noncentrosymmetric $P2$ magnetite shows a finite and sizeable ferroelectric polarization along the $b…
Two-dimensional (2D) multiferroics are key candidate materials towards advancement of smart technology. Here, we employed a simple synthesis approach to address the long-awaited dream of developing ferroelectric and multiferroic 2D materials, specially in the new class of materials called MXenes. The etched Ti$_3$C$_2$T$_x$ MXene was first synthesized after HF-treatment followed by delamination process for successful synthesis of free-standing Ti$_3$C$_2$T$_x$ film. The free-standing film was then exposed to air at room-temperature as well as heated at different temperature to form TiO$_2$ lay…
Contribution of d-electron to ferroelectricity of type-II multiferroics causes strong magneto-electric coupling and distinguishes them from the conventional type-I multiferroics. However, their therein polarization is too small because the ferroelectricity is merely a derivative from the magnetic order. Here we report a new class of multiferroic materials, monolayer VOX2 (X = Cl, Br, and I), which combine the advantages of type-I and type-II multiferroics. Both ferroelectricity and magnetism arise from the same V cation, where the filled d-orbital is perpendicular to an a priori ferroelectric …
The magnetic order, spin dynamics, and crystal structure of the multiferroic Sr0.56Ba0.44MnO3 have been investigated using neutron and x-ray scattering. Ferroelectricity develops at TC=305 K with a polarization of 4.2 microC/cm2 associated with the displacements of the Mn ions, while the Mn4+ spins order below TN = 200 K into a simple G-type commensurate magnetic structure. Below TN the ferroelectric order decreases dramatically demonstrating that the two order parameters are strongly coupled. The ground state spin dynamics are characterized by a spin gap of 4.6(5) meV and the magnon density o…
BiFeO$_3$ is the most famous multiferroic material, but it has no strong spontaneous magnetization due to its antiferromagnetism. Here we show that giant ferroelectric polarization and strong spontaneous magnetization can be both realized in double perovskite Bi$_2$FeMoO$_6$ with R3 (\#146) space group based on BiFeO$_3$. Our first-principles phonon spectra establishes that this multiferroic R3 phase is stable. Our systematic calculations show that it is a spin-polarized semiconductor with gap reaching to 0.54 eV and has a strong ferroelectric polarization of 85$μ$C/cm$^2$. This ferroelctricit…
The behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure and the energy of ADW change due to the interaction with a ferroelectric domain structure. The ferroelectric domain boundaries play the role of pins for magnetic spins, the spin density changes in the vicinity of ferroelectric walls. The ADW energy becomes a periodical function on a coordinate which is the position of ADW relative to the ferroelectric domain structure. It has been shown that the energy of the magneti…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. Here we show that a La0.67Sr0.33MnO3 (LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneli…
Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be practically useful. AlxFe2-xO3 (x-AFO) thin films, belonging to the k-Al2O3 family are interesting because they show room temperature ferrimagnetism and have a polar crystal structure. However, it is difficult to realise its ferroelectric properties at room temperature, due to low resistivity of the films. In this work, we have deposited x-AFO (0.5 <= x <= 1)…
We detected broadband coherent terahertz (THz) emission from multiferroic BiFeO3 after illuminating a high-quality bulk single ferroelectric domain crystal with a ~100 fs optical pulse. The dependence of the emitted THz waveform on the energy and polarization of the optical pulse is consistent with the optical rectification mechanism of THz emission. The THz emission provides a sensitive probe of the electric polarization state of BiFeO3, enabling applications in ferroelectric memories and ferroelectric domain imaging. We also report room-temperature THz optical constants of BiFeO3.
We explore computationally the formation of tri-layer superlattices as an alternative approach for combining ferroelectricity with magnetism to form magnetoelectric multiferroics. We find that the contribution to the superlattice polarization from tri-layering is small compared to typical polarizations in conventionalferroelectrics, and the switchable ferroelectric component is negligible. In contrast, we show that epitaxial strain and ``negative pressure'' can yield large, switchable polarizations that are compatible with the coexistence of magnetism, even in materials with no active ferroele…
Multiferroic particulate composites have been fabricated by taking the morphotropic phase boundary composition of ferroelectric phase Bi(Ni1/2Ti1/2)O3-PbTiO3 and magnetic phase (Ni,Zn)Fe2O4. The ferroelectric phase has coexisting monoclinic and tetragonal perovskite structures with space group Pm and P4mm, respectively whereas the magnetic phase has spinel cubic structure with space group Fd3m. Rietveld structural analysis for the each components of composite reveals that the tetragonality (c/a) of the ferroelectric phase continuously increases with increasing the concentration of magnetic pha…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for ferroelectricity in most of the usual displacive ferroelectric materials is too energy-demanding for some newly diagnosed ferroelectric materials such as the Ga2-xFexO3 (0.8 < x < 1.4) compounds. Some alternative theoretical propositions have been made and need experimental confirmation. A dual-scale electron microscopy study is performed on thin films of the Ga0.6F…
Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO3/SrTiO3, two dimensional conductive states form to avoid the polar discontinuity and magnetic properties are found at such interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a conductive state with magnetic properties, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial conductive or magnet…
We show by means of ab-initio calculations that the organic molecular crystal TTF-CA is multiferroic: it has an instability to develop spontaneously both ferroelectric and magnetic ordering. Ferroelectricity is driven by a Peierls transition of the TTF-CA in its ionic state. Subsequent antiferromagnetic ordering strongly enhances the opposing electronic contribution to the polarization: it is so large that it switches the direction of the total ferroelectric moment. Within an extended Hubbard model we capture the essence of the electronic interactions in TTF-CA, confirm the presence of a multi…
We present a unique example of giant magnetoelectric effect in a conventional multiferroic HoMnO3, where polarization is very large (~56 mC/m2) and the ferroelectric transition temperature is higher than the magnetic ordering temperature by an order. We attribute the uniqueness of the giant magnetoelectric effect to the ferroelectricity induced entirely by the off-center displacement of rare earth ions with large magnetic moments. This finding suggests a new avenue to design multiferroics with large polarization and higher ferroelectric transition temperature as well as large magnetoelectric e…
We report the dielectric dispersion of the giant magnetocapacitance (GMC) in multiferroic DyMnO$_{3}$ over a wide frequency range. The GMC is found to be attributable not to the softened electromagnon but to the electric-field-driven motion of multiferroic domain wall (DW). In contrast to conventional ferroelectric DWs, the present multiferroic DW motion holds extremely high relaxation rate of $\sim$$10^{7}$ s$^{-1}$ even at low temperatures. This mobile nature as well as the model simulation suggests that the multiferroic DW is not atomically thin as in ferroelectrics but thick, reflecting it…
We investigate the electronic, ferroelectric and magnetic properties of KTaO3/PbTiO3 interfaces by using conventional density functional theory (DFT) and advanced DFT such as hybrid functional HSE06. We show that doped holes in valence bands or electrons in conduction bands give rise to ferromagnetism at the interfaces. The ferromagnetic states are ground states for both hole-doped (p-type) and electron-doped (n-type) interfaces by comparison with their corresponding nonmagnetic and antiferromagnetic states. Carriers (holes or electrons) concentrate near the interface to screen the polarizatio…
We report a ferroelectric order at ~ 98 K for NiFe2O4, which carries an inverse spinel structure with a centrosymmetric Fd3m structure at room temperature. The value of spontaneous electric polarization is considerably high as ~ 0.29 μC/cm2 for 5 kV/cm poling field. The electric polarization decreases considerably (~ 17 %) around liquid nitrogen temperature upon application of 50 kOe field, proposing a significant magnetoelectric coupling. The synchrotron diffraction studies confirm a structural transition at ~ 98 K to a noncentrosymmetric structure of P4122 space group. The occurrence of pola…
The antiferromagnetic domain structure of a multiferroic has been investigated in the presence of a ferroelectric domain structure. It has been demonstrated that an inhomogeneous magnetoelectric (flexomagnetoelectric) interaction leads to pinning of antiferromagnetic domain walls at the walls of the ferroelectric domains and to a change in the structure of antiferromagnetic domain walls.
We present a first principles study of the series of multiferroic barium fluorides with the composition BaMF4, where M is Mn, Fe, Co, or Ni. We discuss trends in the structural, electronic, and magnetic properties, and we show that the ferroelectricity in these systems results from the "freezing in" of a single unstable polar phonon mode. In contrast to the case of the standard perovskite ferroelectrics, this structural distortion is not accompanied by charge transfer between cations and anions. Thus, the ferroelectric instability in the multiferroic barium fluorides arises solely due to size …
The combination of antiferroelectricity (AFE) and ferromagnetism (FM) in one structure would allow the development of new type of multiferroic candidates, which be applicable not only in magnetoelectric memories but also in novel energy storage devices. Here we propose a novel type of multiferroic candidate LaxSr1-xFe12O19, whose room temperature state could betuned from ferroelectrics (FE) to antiferroelectrics by changing x from 0 to 0.5. The emphasis of this paper will be focused on the La0.5Sr0.5Fe12O19 system, in which full AFE and FM coexist. The pure antiferroelectric behavior in La0.5S…
Hexagonal RMnO3 manganites are improper ferroelectrics in which the electric polarization is a by-product of the tripling of the unit cell. In YMnO3, there is a second transition at ~ 920K whose nature remains unexplained. We argue that this transition can be seen as a sort of hidden order in which a residual symmetry displayed by the trimerization order parameter is spontaneously broken. This additional order gives rise to twelve structural domains instead of six, and structural domain boundaries that can be either ferroelectric or non-ferroelectric domain walls.
Over the years attempts have been made to compensate for the inherent weaknesses in the bulk state of the multiferroic BiFeO3, such as high leakage current and the absence of ferromagnetic correlation, and exploit its magnetoelectric potential by forming solid solutions with other perovskites. Studies in the recent few years have shown that alloying of BiFeO3 with BaTiO3, both with and without additives, can induce both ferroelectric and ferromagnetic switching. While the coexistence of both the ferroic orders is encouraging from the view point of technological applications, the origin of ferr…
Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varyin…
Multiferroic materials have attracted great interests but are rare in nature. In many transitional metal oxides, charge ordering and magnetic ordering coexist, so that a method of engineering charge-ordered materials into ferroelectric materials would lead to a large class of multiferroic materials. We propose a strategy for designing new ferroelectric or even multiferroic materials by inserting a spacing layer into each two layers of charge-ordered materials and artificially making a superlattice. One example of the model demonstrated here is the perovskite (LaFeO$_3$)$_2$/LaTiO$_3$ (111) sup…
We show that the type-II multiferroic properties of bulk MnWO4 are kept in nanostructured ceramics of 50 nm grain size prepared via spark plasma sintering (SPS). This means that ferroelectric polarization is robust against downsizing, which is at variance with standard ferroelectrics like BaTiO3. We ascribe this stability to the spin-driven nature of the ferroe-lectric correlations in type-II multiferroics while it is resulting from lattice distortion in other cases. This may open the way for persistent type-II multiferroicity with no need for external stabilization like substrate-generated st…
Hexagonal ferrites (h-RFeO$_3$, R=Y, Dy-Lu) have recently been identified as a new family of multiferroic complex oxides. The coexisting spontaneous electric and magnetic polarizations make h-RFeO$_3$ rare-case ferroelectric ferromagnets at low temperature. Plus the room-temperature multiferroicity and predicted magnetoelectric effect, h-RFeO$_3$ are promising materials for multiferroic applications. Here we review the structural, ferroelectric, magnetic, and magnetoelectric properties of h-RFeO$_3$. The thin film growth is also discussed because it is critical in making high quality single cr…
By performing first-principles calculations, we systematically explore the effect of epitaxial strain on the structure and properties of multiferroic TbMnO3. We show that, although the unstrained bulk TbMnO3 displays a non-collinear antiferromagnetic spin order, TbMnO3 can be ferromagnetic under compressive strain, in agreement with the experimental results on TbMnO3 grown on SrTiO3. By increasing the tensile strain up to 5%, we predict that TbMnO3 transforms into a new multiferroic state with a large ferroelectric polarization,two orders of magnitude larger than that in the unstrained bulk, a…
Using first principles calculations, we study the microscopic origin of ferroelectricity (FE) induced by magnetic order in the orthorhombic HoMnO3. We obtain the largest ferroelectric polarization observed in the whole class of improper magnetic ferroelectrics to date. We find that the two proposed mechanisms for FE in multiferroics, lattice- and electronic-based, are simultaneously active in this compound: a large portion of the ferroelectric polarization arises due to quantum-mechanical effects of electron orbital polarization, in addition to the conventional polar atomic displacements. An i…
We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient…
