arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0909.5566cond-mat.mes-hallcond-mat.mtrl-sci
收藏

电场控制多铁性BiFeO3薄膜铁电畴的定向生长

Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films

T. H. Kim, S. -H. Baek, S. M. Yang, S. Y. Jang, D. Ortiz, T. K. Song, J. -S. Chung, C. -B. Eom, T. W. Noh, J. -G. Yoon

摘要:

本文描述了在邻位(001)SrTiO_3衬底上外延生长的多铁性BiFeO_3薄膜中铁电畴的定向生长。详细的薄膜结构分析表明,应变梯度,它可以创建一个对称性破缺的铁电双阱电位,导致铁电畴生长的电场的影响下,优先方向性。我们的研究结果表明,通过对铁电薄膜施加约束,如应变梯度,用电场控制畴生长方向的可能性。

英文摘要:

We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑