We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.
A Combined Theoretical and Experimental Study of the Phase Coexistence and Morphotropic Boundaries in Ferroelectric-Antiferroelectric-Antiferrodistortive Multiferroics
Ferroelectricity controlled chiral spin textures and anomalous valley Hall effect in the Janus magnet-based multiferroic heterostructure
实现自旋拓扑织构的有效操纵和显式识别是使自旋织构成为高存储密度、高数据处理速度和低能耗自旋电子器件信息载体的两个关键因素。与传统的磁调控方法相比,电场调控磁调控是一种无耗散的方法。然而,由于磁场不直接破坏时间反演对称性,磁化强度对电场不敏感,并且由于外部涨落引起的漂移,拓扑磁准粒子的分布很难保持,这可能导致准粒子与均匀磁背景之间的模糊识别。在这里,我们表明,在Janus磁铁为基础的多铁性异质结构LaClBr/In 2 Se 3的异常谷霍尔效应所产生的横向电压,可以很容易地和明确地区分电极化的强度驱动的skyrmionic和均匀铁磁态。我们的工作提供了一种替代方法的数据编码,其中数据编码结合拓扑自旋纹理与可检测的电子输运。