Raman信号揭示非晶衬底上热蒸发超薄铋层的菱形晶体结构
Raman Signal Reveals the Rhombohedral Crystallographic Structure in Ultra-thin Layers of Bismuth Thermally Evaporated on Amorphous Substrate
摘要：
在非晶衬底上生长沿（111）晶向取向的Bi单层双层的挑战下，我们研究了不同厚度的Bi热蒸发到氧化硅上，以揭示主要的原子结构及其氧化。我们采用原子力显微镜、X射线衍射和扫描电子显微镜等方法证明了Bi是结晶的，并且在（111）方向上取向，厚度超过20 nm。令人惊讶的是，拉曼光谱表明，即使对于超薄层的Bi，低至$\sim 5$ nm的菱面体结构被保留。此外，这些信号还表明，暴露于环境条件下的铋膜不会遭受主要的表面氧化。
英文摘要：
Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultra-thin layers of Bi, down to $\sim 5$ nm. Moreover, the signals also reveal that bismuth films exposed to ambient conditions do not suffer major surface oxidation.
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