AI 中文总结
研究菱面体(110)铋薄膜中电荷到自旋转换的温度依赖性，采用二次谐波霍尔方法，发现自旋霍尔电导率和自旋扩散长度随温度降低而增加，揭示其自旋散射机制及电荷到自旋转换的主要归因。
AI 中文摘要
铋中电荷到自旋转换的幅度，即自旋霍尔效应（SHE），强烈依赖于其晶体取向。室温下菱面体(110)铋的转换效率因其大的自旋轨道相互作用而显著较大，这种大的SHE归因于铋中的大有效g因子。尽管成功观察到了大的转换效率，但(110)铋中SHE更详细的物理机制仍不清楚且存在争议。在这项工作中，我们使用二次谐波霍尔方法研究了外延Bi(110)/Ni双层系统中电荷到自旋转换的温度依赖性，发现自旋霍尔电导率和自旋扩散长度都随温度降低而增加。这一发现表明(110)铋中的自旋散射由埃利奥特-雅费机制主导，电荷到自旋转换主要归因于斜散射。
英文摘要
The amplitude of charge-to-spin conversion, namely the spin Hall effect (SHE), in bismuth (Bi) strongly depends on its crystal orientation. The conversion efficiency at room temperature in rhombohedral (110) bismuth is notably large as expected from its large spin-orbit interaction, and such a large SHE is ascribed to the large effective g-factor in bismuth [N. Fukumoto et al., Proc. Nat. Acad. Sci. 120, e2215030120 (2023)]. Despite the successful observation of the large conversion efficiency, a more detailed physical mechanism of the SHE in (110) bismuth is still elusive and under debate. In this work, we investigate the temperature dependence of charge-to-spin conversion in an epitaxial Bi(110)/Ni bilayer system using the second harmonic Hall method, revealing that both spin Hall conductivity and spin diffusion length augment with decreasing temperature. This finding suggests that spin scattering in (110) bismuth is dominated by the Elliott-Yafet mechanism, and the charge-to-spin conversion is mainly attributed to skew scattering.
Comments17pages, 5figures
Journal refPhysical Review B113, 134422 (2026)
