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arXiv 1808.08620cond-mat.mtrl-sci
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石墨烯电子态的声子诱导线宽

Phonon-induced linewidths of graphene electronic states

B. Hellsing, T. Frederiksen, F. Mazzola, T. Balasubramanian, J. Wells

摘要:

基于模型紧束缚计算和实验角分辨光电子能谱(ARPES)数据,分析了石墨烯中电子-声子耦合产生的电子能带的线宽.我们的计算证实了这样的预测:高能光学声子对$\barΓ$点附近的两个上部占用$σ$带的声子诱导线宽做出了最重要的贡献。对于较大的结合能,这些带,以及为$π$带,我们发现的证据,从带间散射$π\rightarrow σ$和$σ\rightarrow π$,分别驱动的平面外ZA声学声子的大量寿命加宽。计算的$σ$谱带线宽的基本特征与最近发表的ARPES数据一致[F. Mazzola等人,物理学~修订版~ B. 95,075430(2017)]和$π$谱带线宽与ARPES数据在这里提出。

英文摘要:

The linewidths of the electronic bands originating from the electron-phonon coupling in graphene are analyzed based on model tight-binding calculations and experimental angle-resolved photoemission spectroscopy (ARPES) data. Our calculations confirm the prediction that the high-energy optical phonons provide the most essential contribution to the phonon-induced linewidth of the two upper occupied $σ$ bands near the $\barΓ$-point. For larger binding energies of these bands, as well as for the $π$ band, we find evidence for a substantial lifetime broadening from interband scattering $π\rightarrow σ$ and $σ\rightarrow π$, respectively, driven by the out-of-plane ZA acoustic phonons. The essential features of the calculated $σ$ band linewidths are in agreement with recent published ARPES data [F. Mazzola et al., Phys.~Rev.~B. 95, 075430 (2017)] and of the $π$ band linewidth with ARPES data presented here.

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