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arXiv 0901.3086cond-mat.mtrl-scicond-mat.str-el
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少层石墨烯中光学声子模的电子-声子相互作用

Electron-Phonon Interactions for Optical Phonon Modes in Few-Layer Graphene

Jia-An Yan, W. Y. Ruan, M. Y. Chou

摘要:

我们提出了第一性原理研究的电子-声子(e-ph)相互作用及其贡献的光学声子模式的线宽在$Γ$和K在一到三层石墨烯。研究发现,由于层间耦合和堆叠几何结构的影响,少层石墨烯中的高频光学声子模与不同的价带和导带耦合,导致这些模式的e-ph相互作用强度不同。源自单层石墨烯的$Γ$ - $E_{2g}$模式的一些多层光学模式表现出略高的频率和大大减小的线宽。另外,多层膜中的K- $A'_1$相关模式的线宽依赖于堆叠模式,并且随着层数的增加而减小。

英文摘要:

We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical phonon modes at $Γ$ and K in one to three-layer graphene. It is found that due to the interlayer coupling and the stacking geometry, the high-frequency optical phonon modes in few-layer graphene couple with different valence and conduction bands, giving rise to different e-ph interaction strengths for these modes. Some of the multilayer optical modes derived from the $Γ$-$E_{2g}$ mode of monolayer graphene exhibit slightly higher frequencies and much reduced linewidths. In addition, the linewidths of K-$A'_1$ related modes in multilayers depend on the stacking pattern and decrease with increasing layer numbers.

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