D. A. Zatsepin, D. W. Boukhvalov, A. F. Zatsepin, Yu. A. Kuznetsova, D. Gogova, V. Ya. Shur, A. A. Esin
Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure mapping was coupled to Density functional theory calculations.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
继续探索
Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films
研究了外延生长的Mn掺杂Ge薄膜的铁磁性起源。采用低温分子束外延技术成功地生长了Mn掺杂的Ge薄膜，且没有析出Mn 5Ge 3等铁磁Ge-Mn金属间化合物。磁性圆二色性测量表明，外延生长的Mn掺杂Ge薄膜具有明显的铁磁行为，但在临界点处观察到的塞曼分裂不是由s，p-d交换作用引起的。高分辨率透射电子显微镜和能量色散X-射线光谱分析表明，无Mn单晶Ge基质中具有高Mn含量的非晶Ge 1-xMnx簇的相分离。由于非晶Ge_（1-x）Mn_x是一种均匀的铁磁半导体，因此非晶Ge_（1-x）Mn_x团簇的析出是外延生长Mn掺杂Ge薄膜铁磁半导体行为的起源。
Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire
采用分子束外延技术在c面Al_2 O_3衬底上生长了磁性隧道结（MTJ）。MTJ叠层由两个铁磁hcp-Co层组成，由薄的绝缘h-BN阻挡层隔开。样品已经生长在一个单一的运行揭示单晶外延结构与尖锐的界面，通过应用透射电子显微镜观察。面内磁化实验已经揭示了薄的顶部Co（软）层和厚的底部Co（硬）层的单独磁化切换。在零磁场下，两个Co层处于反平行状态。
Using four-wave mixing microscopy, we measure the coherent response and ultrafast dynamics of excitons and trions in MoSe$_2$ monolayers grown by molecular beam epitaxy on thin films of hexagonal boron nitride. We assess inhomogeneous and homogeneous broadenings in the transition spectral lineshape. The impact of phonons on the homogeneous dephasing is inferred via the temperature dependence of the dephasing. Four-wave mixing mapping, combined with the atomic force microscopy, reveals spatial correlations between exciton oscillator strength, inhomogeneous broadening and the sample morphology. …
Anisotropic Field Suppression of Morin Transition Temperature in Epitaxially Grown Hematite Thin Films
本文证明了外延生长赤铁矿薄膜中存在Morin相变，发现其相变温度受磁场各向异性抑制，并提出一种确定DM强度的方法，为研究薄膜反铁磁自旋构型提供了新途径。
Two-Carrier Transport in Epitaxially Grown MnAs
磁输运测量的分子束外延生长的铁磁MnAs外延层揭示了存在的正电荷和负电荷载流子。高温下的电输运由空穴主导，低温下由电子主导。我们还观察到与电子和空穴为主的运输制度之间的过渡相关的磁阻的明显变化。这些结果是直接相关的MnAs/半导体混合异质结和它们的开发在电子和光学自旋注入实验。
Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (60…
Texture and morphology of epitaxially grown LuNi2B2C thin films on single crystalline MgO substrates of different orientation
该文件已被撤回，并将尽快更换。
Ferromagnetism and increased ionicity in epitaxially grown TbMnO3 films
在SrTiO 3衬底上生长了TbMnO 3薄膜。薄膜在压缩应变下生长，并且仅部分地被夹在衬底上。这产生了显着的变化，在磁性能和，不像散装材料，薄膜显示铁磁相互作用低于40 K的有序温度。X射线光电子能谱测量表明，薄膜中Mn-3s的分裂比体材料大0.3eV。从头算嵌入式集群计算产生Mn-3S分裂，与实验一致，并揭示，较大的观测值是由于较大的离子性的薄膜。
Interfaces in epitaxially grown Zn3P2 nanowires and their composition dependent optoelectronic properties for photovoltaic applications
本文研究了外延生长Zn3P2纳米线的界面结构及缺陷形成，通过调节V/II比实现光电性质可调谐，为光伏新材料组合提供了可能。
Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100)
采用PdBi 2和Lu靶共溅射法在Ta-Mo缓冲MgO（100）衬底上制备了具有C1 b结构的拓扑绝缘体PdLuBi的薄膜。高质量的PdLuBi薄膜的外延生长证实了X射线光谱和反射高能电子衍射。的均方根粗糙度的薄膜是低至1.45 nm，虽然薄膜是在高温下沉积。薄膜成分接近理想的化学计量比。硬X射线光电子能谱学观察到的PdLuBi薄膜的价带谱与从头算计算的态密度完全对应。
Silicon Layer Intercalation of Centimeter-Scale, Epitaxially-Grown Monolayer Graphene on Ru(0001)
我们开发了一种在Ru（0001）上生长石墨烯的策略，然后进行硅层插层，不仅削弱了石墨烯与金属衬底的相互作用，而且保留了其最高性能。这种G/Si/Ru架构，由硅层插层方法（SIA），其特征在于通过扫描隧道显微镜/光谱和角度分辨电子光电子能谱。这些实验表明，这种新的复合材料的高结构和电子质量。SIA允许对石墨烯和可以用作顶栅的金属衬底之间的距离进行原子控制。我们的研究结果显示了具有定制特性的下一代石墨烯基材料的潜力。
Strain-induced shift in the elastically soft direction of epitaxially grown fcc metals
外延应变能的理论扩展超出谐波近似占大的薄膜/衬底晶格失配。我们发现，对于面心立方贵金属（i）方向<001>和<111>软化拉伸双轴应变（不像锌半导体），而（ii）<110>和<201>软化压缩双轴应变。因此，（iii）在充分压缩时<201>成为最软的方向（最低弹性能量），但（iv）<110>是大拉伸应变的最硬方向。(v)面<001>心立方结构的贵金属在双轴拉伸应变时的急剧软化是由这些材料的小面心立方/体心立方能量差引起的。这些结果可用于选择有效的纯元素和A/sub p/B/sub q/超晶格外延生长的衬底取向，以及解释相分离合金中共格沉淀物的形状。
Atomic-resolution TEM Studies of Pillar-Matrix Structures in Epitaxially Grown Ultrathin ZrO2-La2/3Sr1/3MnO3 Films
我们研究了ZrO 2-La 2/3Sr 1/3 MnO 3柱状基体薄膜，发现薄膜的磁性和电子输运性质受ZrO 2含量的控制。应用像差校正的透射电子显微镜，在原子分辨率上揭示了体系的结构和化学信息，特别是柱-基体界面的结构和化学信息。发现少量的Zr占据基质内的Mn位置，并且发现其在基质内的溶解度小于6摩尔%。此外，锆浓度达到最低浓度的支柱基体界面伴随着氧不足。观察到La和Mn扩散到柱中以及Mn价态的变化。La和Mn的位置内氧化锆柱也揭示了原子分辨率。这些结果为进一步研究这些材料的宏观性能提供了详细的信息。
A Platform for Addressing Individual Magnetite Islands Grown Epitaxially on Ru(0001) and Manipulating Their Magnetic Domains
本文提出一种结合磁控溅射、高温分子束外延与光学光刻制备并寻址 Ru(0001) 上单个磁铁矿岛的平台，利用电流脉冲产生的 Oersted 场配合磁场实现磁畴操控。
The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe$_2$ exhibits a variety of metastable charge density wave orders, including the $\sqrt{19}\times\sqrt{19}$ superstructure, which can be selectively stabili…
Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica
石墨烯电子产品对衬底上的清洁、平坦和取向识别的石墨烯有很高的需求。在这项研究中，异质外延石墨烯生长Cu（111）/云母（001）的化学气相沉积进行了研究，以检查的适用性，顶栅绝缘体的石墨烯的研究，以及石墨烯沟道的研究，通过转移到SiO2/Si衬底。在调整石墨烯生长条件后，石墨烯/Cu/云母衬底的表面粗糙度和平均光滑面积分别为~0.34 nm和~100 um 2。石墨烯/Cu/云母衬底中石墨烯的取向可以通过Cu的六方空隙形态来识别。此外，我们证明了相对较高的迁移率~4500 cm ~ 2 V-1 s-1的石墨烯转移到SiO2/Si衬底上。这些结果表明，本发明的石墨烯/Cu/云母衬底可用于石墨烯上的顶栅绝缘体研究。
Surface- and strain-tuning of the optical dielectric function in epitaxially grown CaMnO3
我们报道了在SrTiO 3（001）、LaAlO 3（001）和SrLaAlO 4（001）衬底上外延的CaMnO 3（001）薄膜的复频率光学介电函数的强烈厚度依赖性。观察到的介电函数的虚部的峰值和0.5 eV的光谱位移为一个给定的吸收幅度的两倍。基于实验数据和介电函数的第一性原理密度泛函理论计算，其随厚度从4到63 nm的演化具有几个区域。在最薄的，应变相干膜，响应的特点是由占主导地位的应变效应的自由表面的显着贡献。然而，在中间和更大的厚度接近块状膜，应变相干性和部分应变弛豫持续和影响的介电函数。
Electrical conductivity enhancement of epitaxially grown TiN thin films
本研究通过直流溅射在高温下制备外延 TiN 薄膜，发现其相比多晶薄膜表面氧化更少且电阻率显著降低至约 30 micro-ohm-cm，证明高温生长能显著增强电导率，适用于耐用可扩展电极。
ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)
SnTe是一种典型的拓扑晶体绝缘体，其中无隙表面态受到晶体对称性的保护。SnTe的拓扑性质的标志是狄拉克锥投影到具有镜像对称性的表面上，源于其体布里渊区的L点附近的带反转，这可以通过角分辨光电发射来测量。我们在BaF_2（111）衬底上用分子束外延方法获得了SnTe薄膜的（111）面。原位角分辨光电子能谱在垂直于（111）面的方向上覆盖多个布里渊区，证明了在表面布里渊区的Gamma_bar和M_bar点上的狄拉克投影锥。此外，在体布里渊区的Gamma点处还观察到了类狄拉克锥的能带结构，其狄拉克能量与Gamma_bar点和M_bar点处的狄拉克能量有很大的不同.
Epitaxially Grown Single-Crystalline SrTiO3 Membranes Using a Solution-Processed, Amorphous SrCa2Al2O6 Sacrificial Layer
本研究提出利用溶液法制备的非晶SrCa2Al2O6作为牺牲层，结合混合MBE技术制备外延单晶SrTiO3自支撑薄膜，验证了该方法的可行性并揭示点缺陷对薄膜铁性的调控作用。
We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations.
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal (2H) Ge phase is a challenge that can be overcome by using wurtzite GaAs nanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I$_3$-type are formed in the metastable 2H structure. The growth of such core/shell heterostructures is observed in situ and in real-time by me…
Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films
研究了反应溅射外延生长的未掺杂和Si掺杂GaN薄膜的电输运性质，揭示了Si掺杂、Ga间隙原子及补偿机制对载流子浓度和迁移率的影响，并用散射模型解释了简并薄膜的输运行为。
Two-dimensional materials with layered structures, appropriate bandgap, and high carrier mobilities have gathered tremendous interests due to their potential applications in optoelectronic and photovoltaic devices. Here, we report the growth of BiI3 thin film with controllable atomic thickness on graphene-terminated 6H-SiC(0001) substrate by molecular beam epitaxy (MBE) method. The growth kinetic processes and crystalline properties of the BiI3 film are studied by scanning tunneling microscopy (STM). The scanning tunneling spectroscopy (STS) reveals a bandgap of 2.8 eV for monolayer BiI3 with …
Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
本研究通过纳米级EELS和DFT分析，揭示了在石墨烯上生长的WS2不同层数配置下的激子特性及环境影响。
Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)
研究三层数码石墨烯在Ru(0001)上的生长、原子结构及电子性质，揭示不同堆叠顺序对密度态的影响，展示其作为探索石墨烯堆叠依赖电子性质的潜在平台。
Structure and morphology of epitaxially grown Fe3O4/NiO bilayers on MgO(001)
该研究利用反应分子束外延制备MgO(001)上的Fe3O4/NiO双层膜，结合XPS、LEED和XRD揭示厚度依赖的弛豫、界面粗糙度及间距特征。
High Throughput Characterization of Epitaxially Grown Single-Layer MoS2
用化学气相沉积法生长单层MoS2是一种成熟的方法，可以制备大面积和高质量的样品。在这篇文章中，我们调查的几何和光学特性的数百个单独的单层二硫化钼微晶高度抛光蓝宝石衬底上生长。大多数微晶沿着蓝宝石衬底的台阶取向，并且具有包括在10 μm2和60 μm2之间的面积。对这些微晶进行的差分反射率测量表明，二硫化钼微晶的面积对B激子的位置和加宽有影响，而取向不影响二硫化钼的A和B激子。这些测量结果表明，差分反射率测量有可能被用来表征大面积CVD生长样品的均匀性。
Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
本研究报道外延生长的1T-PtSe$_2$/铁磁异质结构作为新型太赫兹发射器，利用强自旋轨道耦合和原子层控制实现从逆Rashba-Edelstein效应到逆自旋霍尔效应的转变，展示了PtSe$_2$作为二维太赫兹自旋电子材料的潜力。
Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates
采用脉冲激光沉积技术在氧化钇稳定的氧化锆（YSZ）缓冲的绝缘体上硅（SOI）衬底上生长了La 2/3Ca 1/3 MnO 3薄膜。虽然YSZ层实现了完全的立方对立方外延，但顶部的锰氧化物层是多畴取向的，立方对立方和立方对角外延共存。由于磁晶各向异性和磁弹性各向异性的综合影响，在零磁场下，局域自旋取向在孪晶界上发生变化。结果表明，该薄膜具有很大的基于自旋相关隧穿效应的低场磁电阻效应。该薄膜在50 K时，在<1000 Oe的磁场中，电阻变化约为20%，具有实际应用前景。
Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
针对外延生长二维过渡金属二硫化物因畴合并缺陷导致性能难控的问题，本研究利用4D-STEM等技术对WS₂、WSe₂单层开展多尺度结构分析，识别分类畴结并绘制其分布，验证了可用于该类材料多尺度结构表征的方法。
Due to the atomically thin nature of monolayer and few-layer van der Waals magnets, the undesired background signal from the substrate can have significant contribution when characterizing their magnetic properties. This brings challenges in accurately determining the magnitude of the magnetic moment of the epitaxially grown van der Waals magnets on bulk substrates. In this paper, we discuss the impact of the background subtraction method for accurately determining the magnetic moments in such systems. Using the recently reported intrinsic two-dimensional (2D) van der Waals ferromagnet MnSe${_…
The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal boron nitride (hBN) encapsulation, which drastically reduces the inhomogeneous contribution to the exciton linewidth. Most studies use exfoliated hBN from high quality flakes grown under high pressure. In this work, we show that hBN grown by molecular beam epitaxy (MBE) over a large surface area substrate has a similarly positive impact on the optic…
Self-intercalation as origin of high-temperature ferromagnetism in epitaxially grown Fe5GeTe2 thin films
研究通过分子束外延制备Fe5GeTe2薄膜，发现范德华间隙中的自插层Fe显著提高磁有序温度至375 K，机制为增强层间交换相互作用，确立自插层是实现高温磁性的有效机制。
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi$_2$Se$_3$ on germanium, we aim at combining the long spin diffusion length of Ge with the sp…
Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing
本文研究石墨烯上外延 Cr$_2$Te$_3$ 薄膜退火后的结构与磁性演化，发现高温诱导其由垂直各向异性 Cr$_{1.33}$Te$_2$ 相转变为面内各向异性 Cr$_{1.39}$Te$_2$ 相。
Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important but challenging. In this study, we realized the epitaxial growth of MnSn monolayer on Si(111) substrate, with an atomically thin Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$- buffer layer, and controlled the MnSn thickness with atomic-layer precision. We discovered the ferromagnetism in MnSn monolayer with the Curie temperature (Tc) of ~54 K. As the MnSn film is gro…
Nanocrystalline MnFe$_{2}$O$_{4}$ has shown promise as a catalyst for the oxygen reduction reaction (ORR) in alkaline solutions, but the material has been lightly studied as highly ordered thin film catalysts. To examine the role of surface termination and Mn and Fe site occupancy, epitaxial MnFe$_{2}$O$_{4}$ and Fe$_{3}$O$_{4}$ spinel oxide films were grown on (001) and (111) oriented Nb:SrTiO$_{3}$ perovskite substrates using molecular beam epitaxy and studied as electrocatalysts for the oxygen reduction reaction (ORR). HRXRD and XPS show synthesis of pure phase materials while STEM and RHEE…
MnN is a centrosymmetric collinear antiferromagnet belonging to the transition metal nitride family with a high Neel temperature, a low anisotropy field, and a large magnetic moment per Mn atom. Despite several recent experimental and theoretical studies, the spin symmetry (magnetic point group) and magnetic domain structure of the material remain unknown. In this work, we use optical second harmonic generation (SHG) to study the magnetic structure of thin epitaxially-grown single-crystal (001) MnN films. Our work shows that spin moments in MnN are tilted away from the [001] direction and the …
Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature
我们研究了最近展示的复合材料的生长，该复合材料由垂直排列的碳纳米管和几个石墨烯层组成。我们发现，碳纳米管外延生长下的几个石墨烯层。通过使用与最初使用的催化剂和气态碳前体不同的催化剂和气态碳前体，我们确定这种非常规生长模式并不特定于催化剂-前体对的精确选择。此外，可以使用催化剂和与CMOS工艺兼容的温度（T < 450 \degree C）来生长复合物。
Revealing the (111) surface electronic structure of epitaxially grown Na$_2$KSb photocathode
通过化学气相沉积在石墨烯涂覆的SiC(0001)衬底上首次实现Na$_2$KSb薄膜的晶体外延生长，利用角分辨光电子能谱和密度泛函理论计算识别了Na$_2$KSb(111)表面不同终止的色散表面态，并证明Cs/Sb沉积激活后晶体有序性得以保持，为研究多碱Na$_2$KSb(Cs)光电阴极的电子结构和理性改进其性能开辟了途径。
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k…
A single-phase epitaxially grown ferroelectric perovskite nitride
本研究报道了单相铁电氮化物钙钛矿CeTaN3在氧化物和半导体上的外延生长，证实其极性对称与可翻转铁电畴，剩余极化约20 μC/cm²，为铁电氮化物器件应用奠定基础。
We present models of surfaces of crystals in an environment where molecular beam epitaxy (MBE) and related methods of crystal growth like atomic layer epitaxy (ALE) can be performed. Besides detailed models of reconstructed (001) surfaces of II-VI semiconductors like CdTe and ZnSe, we study generic models to adress fundamental properties of epitaxial growth like kinetic roughening and the coarsening of mounds. A lattice gas model of flat (001) surfaces of CdTe and ZnSe in thermal equilibrium suggest an interpretation of the transition between a c(2x2) reconstruction at low temperature and a (2…
ZnCdO:Eu Epitaxially Grown Alloys for Self-Powered Ultrafast Broadband Photodetection
本研究通过分子束外延生长ZnCdO:Eu合金，利用压电-光电效应实现超快自供能光电探测。
Iso-oriented monolayer α-MoO3(010) films epitaxially grown on SrTiO3(001)
在超高真空下合成有序的二维材料并通过其他技术原位直接表征它们的能力可以大大提高我们目前对它们的物理和化学性质的理解。本文采用分子束外延技术（（010）MoO 3）在SrTiO 3（001）（STO）衬底上可重复地生长出等取向的单层厚度的α-MoO 3薄膜||（001）STO，[100]MoO3|| [100]STO或[010]STO）通过自限制过程。虽然MoO 3的一个面内晶格参数非常接近SrTiO 3的面内晶格参数（aMoO 3 = 3.96 μ m，aSTO = 3.905 μ m），但沿其他方向的晶格失配很大（~ 5%，cMoO 3 = 3.70 μ m），这导致弛豫，如从反射高能电子衍射（RHEED）图案中的条纹分裂清楚地观察到的。在较窄的生长温度范围内，α-MoO 3单层膜的生长最佳。增加沉积时间不会导致厚度的进一步增加，这是由于α-MoO 3层之间的范德华力较弱，导致沉积和热脱附之间的平衡。在初始等取向α-MoO 3单层膜形成后，降低生长温度可得到较厚的结晶性良好的α-MoO 3（010）薄膜。
The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate
推导了GaAs（001）衬底上外延生长的应变InAs量子点的平衡形状与体积的关系。在密度泛函理论中计算了InAs的表面能，并采用连续介质方法计算了弹性弛豫能.
Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing
采用快速热退火诱导锗化方法，在绝缘体上硅（SOI）衬底上外延生长Fe/Co/赝Ge（001）-on-insulator（GOI）多层膜，制备了全Heusler Co2 FeGe（CFG）合金薄膜。X射线衍射（XRD）分析结果表明，薄膜沿[001]方向外延生长，且具有面内外延结构，薄膜的面内外延关系为[100]|| GOI[100]，虽然电影稍微包含纹理成分。强的（111）和（200）超晶格衍射强度表明，CFG薄膜具有高度有序的L21结构。薄膜的横截面高分辨率透射电子显微镜图像表明薄膜具有主要的外延和轻微的织构组分，这与XRD测量结果一致。外延元件直接生长在SOI衬底的BOX层上，而不形成任何界面层。
Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene
本研究通过分子束外延在石墨烯上生长二维锡纳米片，证实二者存在相互作用，发现其具有类石墨烯紫外强吸收特性，为光吸收、光捕获及传感器应用提供新平台。
Fermi-Level Pinning and Barrier Height Control at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications
本文在Pt/CoPt电极上MBE外延ZnO并测得肖特基势垒高度590–690 meV，钉扎因子0.08、CNL为4.94 eV，证明界面遵循金属诱导带隙态模型，为自旋LED等光自旋电子学应用提供路径。
We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2) degenerate two-dimensional electron gas using a delta-doped \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could also i…
Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3
通过应变将KTaO3转化为具有室温以上铁电性的四方极性相，展示了其本征铁电态的稳健性。
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 °C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film di…
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium delivery tube. Films were grown on 6 degree offcut sapphire and (010) \b{eta}-Ga2O3 substrates with growth rates between 0.5 - 22 μm/hr. By controlling the germanium vapor pressure, a wide range of Hall carrier concentrations between 10^17 - 10^19 cm-3 were achieved. Low-temperature Hall data revealed a difference in donor incorporation depending on th…
Synthesis of Perovskite SrIrO3 Thin Films by Sputtering Technique
本文报道了用溅射法制备钙钛矿型SrIrO_3薄膜。在SrTiO 3（001）衬底上外延生长了单相（110）取向的SrIrO $_3$薄膜。利用离轴XRD $θ-2θ$扫描，我们证明这些薄膜具有（1 - 10）面外取向，（001）和（1-10）位于面内。溅射生长的薄膜具有光滑、均匀的表面和与衬底良好的共格界面。
We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3x1…
Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge
在低温下在固体中进行快速、可逆的氧化还原反应而不发生热机械降解，是提高许多能源材料和设备的整体性能和寿命的一种有前途的策略。然而，阳离子的氧化态和高热力学势垒的鲁棒性阻碍了在低温下实现快速催化和本体扩散。在这里，我们报告了一个显着降低的氧化还原温度的外延稳定的锶钴酸盐（SrCoOx）直接生长的两个不同的结晶相，无论是钙钛矿SrCoO 3-δ或brownmillerite SrCoO2.5。重要的是，这两个相可以在显著降低的温度（200~300 °C）下在相当短的时间（< 1分钟）内可逆地转换，而不破坏母体框架。SrCoO_（3-δ）的快速低温氧化还原活性归因于两个拓扑相之间较小的吉布斯自由能差。这些结果为开发高灵敏度电化学传感器和低温阴极材料提供了有用的信息。
Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3
本研究通过MOCVD生长氮掺杂η-Ga2O3薄膜，实现替代HF处理的绝缘缓冲层，有效补偿界面硅峰。
Exploring the subsurface atomic structure of the epitaxially grown phase change material Ge$_2$Sb$_2$Te$_5$
采用扫描隧道显微镜（STM）和能谱（STS）结合密度泛函理论（DFT）计算，研究了分子束外延生长的相变材料Ge $_{2}$ Sb $_{2}$ Te $_{5}$亚稳相的表面和亚表面性质。（111）表面被完整的Te层覆盖，然而这允许检测由Ge和Sb原子构成的更无序的次表面层。中心，我们发现，亚稳态Ge $_{2}$ Sb $_{2}$ Te $_{5}$的次表层是显着更有序比预期的。首先，我们表明，空位几乎不存在的次表层内。其次，由价带起始的空间变化跟踪的电势波动明显小于对于原子和空位在次表面层中的随机分布的预期。涨落的强度与带电受主的电势分布相一致，而不受其它类型缺陷的影响。第三，DFT计算预测的部分四面体Ge键合内的无序次表面层，表现出清晰的指纹在局部态密度的峰值接近导带开始。在STS数据中不存在该峰，这意味着不存在四面体Ge，这可能是由于缺少较短四面体Ge键周围的结构弛豫所需的空位。最后，孤立的缺陷配置与低密度的$~10^{-4}$ /nm $^2$的STM和DFT数据的比较，证实了显着改善的顺序驱动的空位层的建立在外延膜。
Phenomenological theory of phase transitions in epitaxial BaTiO3 thin films
利用Landau-Devonshire八阶势建立了立方衬底上外延生长BaTiO 3（BT）薄膜的唯象热力学理论。所构造的“错配温度”相图是不对称的。我们发现，相图的整体视图取决于在计算中使用的顺应性的值，并提供两个定性不同的图。利用室温四方形变（c-a）/a作为失配应变的函数，可以找到生长在特定衬底上的BT膜的热力学路径。
扫码添加微信好友，提出您的宝贵建议 👇
💡 备注请填写：网站反馈
发表机构由 AI 从论文文本抽取，如发现错误，欢迎反馈修正建议。