金属有机气相外延生长低FWHM分布δ掺杂\b{eta}薄膜
Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy
摘要：
本文报道了用低温MOVPE法生长低半高宽的硅δ掺杂\b{eta} -Ga_2 O_3薄膜。使用二次离子质谱、电容电压和霍尔技术对生长的薄膜进行了表征。二次离子质谱测量表明，表面偏析是MOVPE生长薄膜大半峰宽的主要原因。观察到表面偏析系数（R）随着生长温度的降低而降低。在600 °C下生长的膜显示出9.7 X 1012 cm-2的电子浓度和3.2nm的FWHM。外延膜的高分辨率扫描/透射电子显微镜没有揭示δ片层和周围区域的晶体质量的任何显著的可观察到的退化。在Fe掺杂衬底上的δ掺杂膜的霍尔测量显示，薄层电荷密度为6.1 × 1012 cm-2，载流子迁移率为83 cm 2/V. s。在MOVPE生长的\b{eta} -Ga 2 O 3中实现尖锐的delta掺杂分布对于高性能器件应用是有希望的。
英文摘要：
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 °C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta doping profiles in MOVPE-grown \b{eta}-Ga2O3 is promising for high performance device applications.
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