外延生长的1 TaTe中的新型$\sqrt{19}\times\sqrt{19}$超结构$_2$
A novel $\sqrt{19}\times\sqrt{19}$ superstructure in epitaxially grown 1T-TaTe$_2$
摘要：
电子有序的自发形成是理解二维材料中复杂量子态和工程异质结构的关键因素。报道了一种新的$\sqrt{19}\times\sqrt{19}$电荷序在分子束外延生长的少层厚1 T-TaTe $_2$过渡金属二硫族化物薄膜中的发现。我们的光发射和扫描探针测量表明，单层1 $_2$表现出多种亚稳态电荷密度波级，包括$\sqrt{19}\times\sqrt{19}$超结构，可以通过控制生长后退火温度来选择性地稳定该超结构。此外，我们发现，只有$\sqrt{19}\times\sqrt{19}$秩序坚持在1 T-TaTe $_2$膜厚比单层，高达8层。我们的研究结果确定了以前未实现的新的电子顺序在一个多研究的过渡金属二硫属化物，并提供了一个可行的路线来控制它在外延生长过程中。
英文摘要：
The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe$_2$ exhibits a variety of metastable charge density wave orders, including the $\sqrt{19}\times\sqrt{19}$ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, we find that only the $\sqrt{19}\times\sqrt{19}$ order persists in 1T-TaTe$_2$ films thicker than a monolayer, up to 8 layers. Our findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.
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