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arXiv 2602.04426cond-mat.mtrl-sciphysics.app-ph
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ZnCdO:Eu 通过分子束外延生长的合金用于自供能超快宽带光电探测

ZnCdO:Eu Epitaxially Grown Alloys for Self-Powered Ultrafast Broadband Photodetection

Wroclaw University of Science and Technology(弗罗茨瓦夫科技大学);Institute of Physics, Polish Academy of Sciences(波兰科学院物理研究所)

Igor Perlikowski, Eunika Zielony, Aleksandra Wierzbicka, Anastasiia Lysak, Rafal Jakiela, Ewa Przezdziecka

AI总结:

本研究通过分子束外延生长ZnCdO:Eu合金,利用压电-光电效应实现超快自供能光电探测。

摘要:

光电探测器(PDs)在成像、通信和传感技术中至关重要。然而,其依赖外部电源使其能耗大。这催生了对自供能PDs的强烈需求作为可持续替代方案。ZnO是一种有前途的半导体材料,因其非中心对称的纤锌矿晶体结构具有压电特性,能够产生压电-光电效应,从而增强响应速度。通过合金化和掺杂可以调节ZnO的性质。因此,本工作探索了通过分子束外延(MBE)在硅基板上生长的ZnCdO:Eu随机合金薄层,Cd含量不同。研究显示,掺杂Eu显著影响生长动力学,促进[0001]方向偏好。此外,光电发光测量证实Eu³+离子已成功掺入结构中。电学测量显示,引入Cd消除了ZnO/Si界面的肖特基势垒问题。n-ZnCdO:Eu/p-Si结表现出整流行为,并在380-1150 nm波长范围内无需外部电偏压即可产生光电流。利用压电-光电效应,这些器件实现了超快响应时间:在405 nm和650 nm照明下,上升时间低于10微秒,衰减时间低于5微秒,使其成为不依赖额外性能增强层的最快自供能氧化物基探测器之一。

英文摘要:

Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. ZnO is a promising semiconductor material due to its pyroelectric properties, stemming from non-centrosymmetric wurtzite crystal structure, enabling the pyro-phototronic effect that enhances response speed. Properties of ZnO can be tailored via alloying and doping. Thus, this work explores thin layers of ZnCdO:Eu random alloys grown by molecular beam epitaxy (MBE) on silicon substrates, with varying Cd content. The study shows that doping with Eu notably affects growth kinetics, promoting strong [0001] orientation preference. Moreover, photoluminescence measurements confirm the successful incorporation of Eu3+ ions into the structure. Electrical measurements show that the introduction of Cd eliminates the problem of Schottky barrier formation on the ZnO/Si interface. The n-ZnCdO:Eu/p-Si junctions exhibit rectifying behavior and generate photocurrent across 380-1150 nm wavelength range without external electrical bias. Utilizing the pyro-phototronic effect, these devices achieved ultrafast response times: rise time below 10 us and decay time below 5 us for 405 nm and 650 nm illumination - placing them among the fastest self-powered oxide-based detectors that do not rely on additional performance-enhancing layers.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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