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arXiv 1008.0141cond-mat.mes-hallcond-mat.dis-nn
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拓扑绝缘体Bi2Te3中杂质对弱反定域化的影响

Impurity effect on weak anti-localization in the topological insulator Bi2Te3

Hong-Tao He, Gan Wang, Tao Zhang, Iam-Keong Sou, George K. L. Wong, Jian-Nong Wang, Hai-Zhou Lu, Shun-Qing Shen, Fu-Chun Zhang

摘要:

研究了低温下拓扑绝缘体Bi_2Te_3薄膜的弱反局域化效应。在倾斜磁场下的磁导特性中,揭示了与表面载流子相关的二维WAL效应。我们的数据表明,所观察到的WAL对非磁性Au杂质在薄膜表面上的沉积是稳健的。但它会因磁性Fe杂质的沉积而淬灭,从而破坏拓扑表面态的pi Berry相。5 nm Bi2Te3膜的磁导数据表明,观察到的Fe杂质的沉积从辛到酉类的交叉。

英文摘要:

We study weak anti-localization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. Two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magneto-conductance. Our data demonstrates that the observed WAL is robust against deposition of non-magnetic Au impurities on the surface of the thin films. But it is quenched by deposition of magnetic Fe impurities which destroy the pi Berry's phase of the topological surface states. The magneto-conductance data of a 5 nm Bi2Te3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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