研究了Bi $_2$ Se $_3$纳米带在宽温度范围（$T$ = 300 K-2 K）和不同磁场（$B$）取向下的磁电阻效应。磁电阻是强各向异性的垂直磁电阻远远大于纵向和横向的磁电阻。垂直磁电阻表现出二次$B$的依赖性，在低场，并成为线性高$B$。然而，当$T$增加时，垂直MR在整个磁场范围（0- 9 T）内变为线性直至室温。这种不寻常的线性MR的拓扑表面态的线性量子MR的上下文中进行了讨论。我们还观察到了低温下磁共振的边界散射效应，这表明除了简单的三维费米面图像外，面外费米动量要比面内费米动量小得多。
英文摘要：
Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture.
The magneto-optical response of monolayer transition metal dichalcogenides (TMDs), including excitonic effects, is studied using a nanoribbon geometry. We compute the diagonal optical conductivity and the Hall conductivity. Comparing the excitonic optical Hall conductivity to results obtained in the independent particle approximation, we find an increase in the amplitude corresponding to one order of magnitude when excitonic effects are included. The Hall conductivities are used to calculate Faraday rotation spectra for MoS2 and WSe2. Finally, we have also calculated the diamagnetic shift of t…
We investigate the transport properties of pristine zigzag-edged borophene nanoribbons (ZBNRs) of different widths, using the fist-principles calculations. We choose ZBNRs with widths of 5 and 6 as odd and even widths. The differences of the quantum transport properties are found, where even-N BNRs and odd-N BNRs have different current-voltage relationships. Moreover, the negative differential resistance (NDR) can be observed within certain bias range in 5-ZBNR, while 6-ZBNR behaves as metal whose current rises with the increase of the voltage. The spin filter effect of 36% can be revealed whe…
Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied with an axial magnetic field, the TI NR exhibits magnetoconductance (MC) oscillations with a flux period of h/e, i.e., Aharonov-Bohm (AB) oscillations, and h/2e, i.e., Altshuler-Aronov-Spivak (AAS) oscillations. Herein, we present an extensive study of the AB and AAS oscillations in Sb doped Bi$_2$Se$_3$ TI NR as a function of the gate voltage, revealing ph…
Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance
We describe designs for the realization of topological Majorana qubits in terms of proximitized topological insulator nanoribbons pierced by a uniform axial magnetic field. This platform holds promise for particularly robust Majorana bound states, with easily manipulable inter-state couplings. We propose proof-of-principle experiments for initializing, manipulating, and reading out Majorana box qubits defined in floating devices dominated by charging effects. We argue that the platform offers design advantages which make it particularly suitable for extension to qubit network structures realiz…
The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In narrow nanoribbons, even for small vacancy concentrations, defect-like localized states give rise to hybridization between the edge states erasing topological protection and enabling backscattering e…
Topological insulator (TI) nanoribbons with proximity-induced superconductivity are a promising platform for Majorana bound states (MBSs). In this work, we consider a detailed modeling approach for a TI nanoribbon in contact with a superconductor via its top surface, which induces a superconducting gap in its surface-state spectrum. The system displays a rich phase diagram with different numbers of end-localized MBSs as a function of chemical potential and magnetic flux piercing the cross section of the ribbon. These MBSs can be robust or fragile upon consideration of electrostatic disorder. W…
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped Bi$_2$Se$_3$-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness …
Profiles of the spin and orbital angular momentum accumulations induced by a longitudinally applied electric field are explored in nanoribbons of $p$-band systems with a honeycomb lattice. We show that nanoribbons with zigzag borders can exhibit orbital magnetoelectric effects. More specifically, we have found that purely orbital magnetization oriented perpendicularly to the ribbon may be induced in these systems by means of the external electric field, when sublattice symmetry is broken. The effect is rather general and may occur in other multi-orbital materials.
Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet been reported with similar properties, despite the fact that size confinement should help reduce contributions from bulk carriers. Here we demonstrate that Bi2Se3 nanoribbons, grown by a simple catalyst-free physical-vapour deposition, have inherently low bulk carrier densities, and can be further made bulk-free by size confinement, thus revealing the high mo…
Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused by well-defined and sharply resolved phase-coherent loops. From measurements at different magnetic field tilt angles we deduced that these loops are preferentially oriented parallel to the quintuple …
Transport in magnetic-topological-insulator nanoribbons containing multiple superconductor-proximitized sectors
Institute for Cross-Disciplinary Physics and Complex Systems IFISC (CSIC-UIB)（交叉物理与复杂系统研究所）；Department of Physics, University of the Balearic Islands（巴利阿里大学物理系）
Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons
在拓扑绝缘体（TI）发现近十年后，通过电输运实验识别和表征其拓扑表面态的重要任务仍然没有完成。这些实验的解释是困难的存在下，剩余的散装承运人和他们的耦合到表面状态，这是尚未得到很好的理解。在这项工作中，我们提出了第一个证据的存在和控制的体-表面耦合的Bi 2 Te 2Se纳米带，这是有前途的平台，为未来的TI为基础的设备。我们的磁阻测量结果表明，当薄膜厚度超过体相弛豫长度时，纳米带中的量子干涉的相干通道的数量会突然改变。我们解释这一观察结果作为一个证据，位于相对的表面上的金属状态之间的批量介导的耦合。这一假设是支持下进行的一组栅电压和平行的磁场，后者改变了表面间的耦合在一个可控的方式额外的磁阻测量。
We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-dimensional subbands. Below the superconducting transition temperature of PbIn electrodes, we observed supercurrent flow through TI NR-based SQUID. The critical current periodically modulates with a m…
We study spin-orbit torques and charge pumping in magnetic quasi-one dimensional zigzag nanoribbons with hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences topological phase transition from a trivial band insulator to a quantum spin Hall insulator either by tuning the magnetization direction or the intrinsic spin-orbit coupling. We find that spin-charge conversion efficiency (i.e. spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.
We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting Nb contacts. We observe a gate-tunable critical current ($I_C$) for gate voltages ($V_g$) above the charge neutrality point ($V_{CNP}$), with $I_C$ as large as 430 nA. We also observe MAR peaks in the differential conductance ($dI/dV$) versus DC voltage ($V_{dc}$) across the junction corresponding to sub-harmonic peaks (at $V_{dc} = V_n = 2Δ_{Nb}/en$, where $…
The orbital magnetoelectric effect (OME) generically refers to the appearance of an orbital magnetization induced by an applied electric field. Here, we show that nanoribbons of transition metal dichalcogenides (TMDs) with zigzag (ZZ) edges may exhibit a sizeable OME activated by an electric field applied along the ribbons' axis. We examine nanoribbons extracted from a monolayer (1L) and a bilayer (2L) of MoS$_2$ in the trigonal (H) structural phase. Transverse profiles of the induced orbital angular momentum accumulations are calculated to first order in the longitudinally applied electric fi…
We report on the fabrication and electrical transport properties of superconducting quantum interference devices (SQUIDs) made from a (Bi_{1-x}Sb_x)_2Se_3 topological insulator (TI) nanoribbon (NR) connected with Pb0.5In0.5 superconducting electrodes. Below the transition temperature of the superconducting Pb0.5In0.5 electrodes, periodic oscillations of the critical current are observed in the TI NR SQUID under a magnetic field applied perpendicular to the plane owing to flux quantization. Also the output voltage modulates as a function of the external magnetic field. Moreover, the SQUID the S…
Topological insulator (TI) nanoribbons (NRs) provide a unique platform for investigating quantum interference oscillations combined with topological surface states. One-dimensional subbands formed along the perimeter of a TI NR can be modulated by an axial magnetic field, exhibiting Aharonov-Bohm (AB) and Altshuler-Aronov-Spivak (AAS) oscillations of magnetoconductance (MC). Using Sb-doped Bi2Se3 TI NRs, we found that the relative amplitudes of the two quantum oscillations can be tuned by varying the channel length, exhibiting crossover from quasi-ballistic to diffusive transport regimes. The …
Superconducting proximity junctions made of topological insulator (TI) nanoribbons (NRs) provide a useful platform for studying topological superconductivity. We report on the fabrication and measurement of Josephson junctions (JJs) using Sb doped Bi$_2$Se$_3$ NRs in contact with Al electrodes. Aharonov$-$Bohm and Altshuler$-$Aronov$-$Spivak oscillations of the axial magneto-conductance of TI NR were observed, indicating the existence of metallic surface states along the circumference of the TI NR. We observed the supercurrent in the TI NR JJ and subharmonic gap structures of the differential …
We report anomalous enhancement of the critical current at low temperatures in gate-tunable Josephson junctions made from topological insulator BiSbTeSe$_2$ nanoribbons with superconducting Nb electrodes. In contrast to conventional junctions, as a function of the decreasing temperature $T$, the increasing critical current $I_c$ exhibits a sharp upturn at a temperature $T_*$ around 20$\%$ of the junction critical temperatures for several different samples and various gate voltages. The $I_c$ vs. $T$ demonstrates a short junction behavior for $T>T_*$, but crosses over to a long junction behavio…
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbons and nano Hall bars at cryogenic temperatures for their topological properties. The Hall bars are defined in deep-etched Si$_3$N$_4$/SiO$_2$ nano-trenches on a silicon (111) substrate followed by a …
Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an in-plane magnetic field, the orbital effect cannot be neglected when the surface states are confined to the boundary of a nanoribbon geometry. Here, we report on the magnetotransport properties of su…
